Integrated circuit packaging system having warpage prevention structures
View Patent ↗A method of manufacture of an integrated circuit packaging system includes providing a substrate; connecting an integrated circuit die; forming a molding having a temperature-dependent characteristic directly on the top surface of the substrate; and forming a coupling encapsulation having a coupled characteristic different from the temperature-dependent characteristic directly on the molding forms an encapsulation boundary between the coupling encapsulation and the molding.
1. An integrated circuit packaging system comprising:
a substrate;
an integrated circuit die connected to the substrate;
a molding having a temperature-dependent characteristic formed directly on a top surface of the substrate, the molding exposes a perimeter portion of the substrate from the molding;
a coupling encapsulation having a coupled characteristic different from the temperature-dependent characteristic, with the coupling encapsulation formed directly on the molding; and
an encapsulation boundary formed between and directly on the molding and the coupling encapsulation the encapsulation boundary includes:
a non-vertical surface extending in a non-vertical direction from the integrated circuit die toward the perimeter portion of the substrate, and
a non-horizontal surface integral with the non-vertical surface and directly on the substrate, with the non-horizontal surface and the non-vertical surface forming a protruding corner.
2. The system as claimed in claim 1 wherein:
the temperature-dependent characteristic includes a base shrinkage; and
the coupled characteristic includes a coupled shrinkage different from the base shrinkage.
3. The system as claimed in claim 1 wherein:
the temperature-dependent characteristic includes a transition temperature; and
the coupled characteristic includes a selected transition level different from the transition temperature.
4. An integrated circuit packaging system comprising:
a substrate;
an integrated circuit die connected to the substrate;
a molding having a temperature-dependent characteristic formed directly on a top surface of the substrate, wherein the molding is directly on a perimeter portion of the substrate, with the molding having a primary top surface;
a coupling encapsulation having a coupled characteristic different from the temperature-dependent characteristic, with the coupling encapsulation formed directly on the molding, the coupling encapsulation includes a coupling top surface coplanar with the primary top surface; and
an encapsulation boundary formed between and directly on the molding and the coupling encapsulation, the encapsulation boundary extends in a non-horizontal direction and surrounding the integrated circuit die.
5. The system as claimed in claim 4 wherein the encapsulation boundary includes an irregular surface portion abutting the encapsulation boundary and between the molding and the coupling encapsulation.
6. The system as claimed in claim 4 wherein:
the temperature-dependent characteristic includes a base shrinkage; and
the coupled characteristic includes a coupled shrinkage different from the base shrinkage.
7. The system as claimed in claim 4 wherein:
the temperature-dependent characteristic includes a transition temperature; and
the coupled characteristic includes a selected transition level different from the transition temperature.
8. An integrated circuit packaging system comprising:
a substrate;
an integrated circuit die connected to the substrate;
a molding having a temperature-dependent characteristic formed directly on a top surface of the substrate;
a coupling encapsulation having a coupled characteristic different from the temperature-dependent characteristic, with the coupling encapsulation formed directly on the molding;
an encapsulation boundary formed between and directly on the molding and the coupling encapsulation;
an external interconnect attached directly on the substrate on a surface opposite the integrate circuit die; and
an internal interconnect connecting the integrated circuit die to the substrate; and
wherein the encapsulation boundary is directly on the internal interconnect.
9. The system as claimed in claim 8 wherein:
the temperature-dependent characteristic includes a base shrinkage; and
the coupled characteristic includes a coupled shrinkage different from the base shrinkage.
10. The system as claimed in claim 8 wherein:
the temperature-dependent characteristic includes a transition temperature; and
the coupled characteristic includes a selected transition level different from the transition temperature.