Semiconductor device and method of forming conductive TSV with insulating annular ring
View Patent ↗A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive material is deposited in the first via to form a conductive TSV. An insulating material can be deposited in the first via to form an insulating core within the conductive via. After forming the conductive TSV, a second via is formed around the conductive TSV from the back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. An insulating material is deposited in the second via to form an insulating annular ring. The conductive via can be recessed within or extend above a surface of the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a conductive via through the semiconductor die;
forming an opening outside the conductive via; and
depositing a first insulating material in the opening.
2. The method of claim 1 , further including depositing a second insulating material within the conductive via.
3. The method of claim 1 , further including removing a portion of the conductive via to a level below a surface of the semiconductor die.
4. The method of claim 1 , wherein the conductive via extends above a surface of the semiconductor die.
5. The method of claim 1 , wherein forming the conductive via includes:
forming a via through the semiconductor die; and
depositing a conductive material conformally over sidewalls of the via.
6. The method of claim 1 , wherein a width of the conductive via is greater than a width of the opening.
7. A method of making a semiconductor device, comprising:
providing a semiconductor material;
forming a conductive via through the semiconductor material; and
depositing an insulating material around the conductive via.
8. The method of claim 7 , further including forming an insulating core through the conductive via.
9. The method of claim 7 , wherein the insulating material terminates at a surface of the semiconductor material.
10. The method of claim 7 , wherein the insulating material forms an insulating ring.
11. The method of claim 7 , wherein a width of the conductive via is less than a width of the insulating material.
12. The method of claim 7 , further including forming a conductive layer over the semiconductor material.
13. The method of claim 12 , wherein the conductive via and the insulating material extend to the conductive layer.
14. A semiconductor device, comprising:
a semiconductor die;
a conductive via formed through the semiconductor die including an opening formed outside the conductive via; and
an insulating material deposited in the opening.
15. The semiconductor device of claim 14 , wherein the conductive via is recessed below a surface of the semiconductor die.
16. The semiconductor device of claim 14 , wherein the insulating material terminates at a surface of the semiconductor die.
17. The semiconductor device of claim 14 , wherein a width of the conductive via is less than a width of the insulating material.
18. The semiconductor device of claim 14 , wherein a width of the conductive via is greater than a width of the insulating material.
19. The semiconductor device of claim 14 , further including a conductive layer formed over the semiconductor die.
20. The semiconductor device of claim 19 , wherein the conductive via electrically connects to the conductive layer.
21. A semiconductor device, comprising:
a semiconductor material;
a conductive via formed through the semiconductor material; and
an insulating material deposited around the conductive via.
22. The semiconductor device of claim 21 , further including an insulating core formed within the conductive via.
23. The semiconductor device of claim 21 , wherein the insulating material forms an insulating ring.
24. The semiconductor device of claim 21 , wherein the conductive via is recessed below a surface of the semiconductor material.
25. The semiconductor device of claim 21 , wherein the conductive via extends above a surface of the semiconductor material.