Semiconductor device and method of forming through-silicon-via with sacrificial layer

1. A method of making a semiconductor device, comprising:

providing a semiconductor wafer;

forming a conductive via into the semiconductor wafer;

removing a portion of the semiconductor wafer so the conductive via extends above a surface of the semiconductor wafer;

forming a first insulating layer including a first material composition contacting the surface of the semiconductor wafer and the conductive via;

forming a second insulating layer including a second material composition over the first insulating layer; and

removing a portion of the second insulating layer and a portion of the first insulating layer to make the conductive via and first insulating layer substantially coplanar across a width of the semiconductor wafer while detecting a difference in a property of the first material composition and second material composition using optical detection or motor current detection.

2. The method of claim 1 , further including completely removing the second insulating layer.

3. The method of claim 1 , wherein the first insulating layer includes silicon nitride and the second insulating layer includes at least one of silicon oxide, silicon dioxide, silicon oxynitride and silicon carbon nitride.

4. The method of claim 1 , wherein the first insulating layer includes at least one of silicon oxide and silicon dioxide, and the second insulating layer includes at least one of silicon nitride, silicon oxynitride and silicon carbon nitride.

5. A method of making a semiconductor device, comprising:

providing a semiconductor wafer;

forming a conductive via into the semiconductor wafer with a portion of the conductive via extending above the semiconductor wafer;

forming a first insulating layer including a first material composition over the semiconductor wafer and the conductive via;

forming a second insulating layer including a second material composition over the first insulating layer; and

removing a portion of the second insulating layer and a portion of the first insulating layer to expose the conductive via while detecting a difference in an optical or material property of the first material composition and second material composition.

6. The method of claim 5 , further including completely removing the second insulating layer.

7. The method of claim 5 , wherein the first insulating layer includes silicon nitride and the second insulating layer includes at least one of silicon oxide, silicon dioxide, silicon oxynitride and silicon carbon nitride.

8. The method of claim 5 , wherein the first insulating layer includes at least one of silicon oxide and silicon dioxide, and the second insulating layer includes at least one of silicon nitride, silicon oxynitride and silicon carbon nitride.

9. The method of claim 5 , wherein detecting the difference between the first material composition and second material composition is via optical detection.

10. The method of claim 5 , wherein detecting the difference between the first material composition and second material composition is via motor current detection.

11. A method of making a semiconductor device, comprising:

providing a semiconductor wafer;

forming a first insulating layer including a first material composition over the semiconductor wafer;

forming a second insulating layer including a second material composition over the first insulating layer; and

removing a portion of the second insulating layer and a portion of the first insulating layer while detecting a difference in an optical or material property of the first material composition and second material composition.

12. The method of claim 11 , further including completely removing the second insulating layer.

13. The method of claim 11 , wherein the first insulating layer includes silicon nitride and the second insulating layer includes at least one of silicon oxide, silicon dioxide, silicon oxynitride and silicon carbon nitride.

14. The method of claim 11 , wherein the first insulating layer includes at least one of silicon oxide and silicon dioxide, and the second insulating layer includes at least one of silicon nitride, silicon oxynitride and silicon carbon nitride.

15. The method of claim 11 , wherein detecting the difference between the first material composition and second material composition is via optical detection.

16. The method of claim 11 , wherein detecting the difference between the first material composition and second material composition is via motor current detection.

17. A method of making a semiconductor device, comprising:

providing a substrate including a first insulating layer and second insulating layer formed over the substrate; and

removing a portion of the second insulating layer and a portion of the first insulating layer while detecting a difference in an optical or material property of the first insulating layer and second insulating layer.

18. The method of claim 17 , further including completely removing the second insulating layer.

19. The method of claim 17 , wherein the first insulating layer includes silicon nitride and the second insulating layer includes at least one of silicon oxide, silicon dioxide, silicon oxynitride and silicon carbon nitride.

20. The method of claim 17 , wherein the first insulating layer includes at least one of silicon oxide and silicon dioxide, and the second insulating layer includes at least one of silicon nitride, silicon oxynitride and silicon carbon nitride.

21. The method of claim 17 , wherein detecting the difference between the first insulating layer and second insulating layer is via optical detection.

22. The method of claim 17 , wherein detecting the difference between the first insulating layer and second insulating layer is via motor current detection.