Semiconductor device and method of making an embedded wafer level ball grid array (EWLB) package on package (POP) device with a slotted metal carrier interposer
View Patent ↗A semiconductor device has a semiconductor die. The semiconductor die is disposed over a conductive substrate. An encapsulant is deposited over the semiconductor die. A first interconnect structure is formed over the encapsulant. An opening is formed through the substrate to isolate a portion of the substrate electrically connected to the first interconnect structure. A bump is formed over the first interconnect structure. Conductive vias are formed through the encapsulant and electrically connected to the portion of the substrate. A plurality of bumps is formed over the semiconductor die. A first conductive layer is formed over the encapsulant. A first insulating layer is formed over the first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. Protrusions extend above the substrate.
1. A method of making a semiconductor device, comprising:
providing a conductive substrate;
disposing a semiconductor die over the conductive substrate;
depositing an encapsulant over the semiconductor die;
forming an interconnect structure over the encapsulant; and
forming an opening through the conductive substrate and a portion of the encapsulant to isolate a portion of the conductive substrate electrically connected to the interconnect structure.
2. The method of claim 1 , further including forming a plurality of conductive vias through the encapsulant.
3. The method of claim 1 , wherein forming the opening creates a plurality of contact pads electrically connected to the interconnect structure.
4. The method of claim 1 , further including depositing the encapsulant coplanar with a surface of the semiconductor die.
5. The method of claim 1 , further including:
providing the conductive substrate to include a protrusion extending above a surface of the conductive substrate; and
forming a conductive via extending through the encapsulant to the protrusion.
6. A method of making a semiconductor device, comprising:
providing a conductive substrate;
disposing a semiconductor die over the conductive substrate;
depositing an encapsulant over the semiconductor die; and
forming a trench through the conductive substrate after depositing the encapsulant.
7. The method of claim 6 , further including forming a conductive via through the encapsulant.
8. The method of claim 6 , further including forming the trench extending over the semiconductor die.
9. The method of claim 6 , further including forming the trench outside a footprint of the semiconductor die.
10. The method of claim 6 , further including forming the conductive substrate to include a protrusion extending from a surface of the conductive substrate.
11. The method of claim 6 , further including forming a plurality of trenches through the conductive substrate to create a plurality of contact pads.
12. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a semiconductor die over the substrate;
forming an interconnect structure over the semiconductor die; and
forming a trench through the substrate after disposing the semiconductor die over the substrate.
13. The method of claim 12 , further including:
depositing an encapsulant over the semiconductor die; and
forming a conductive via through the encapsulant.
14. The method of claim 12 , further including forming a plurality of trenches through the substrate to form a plurality of contact pads.
15. The method of claim 12 , further including forming the trench extending over the semiconductor die.
16. The method of claim 12 , further including providing the substrate to include a leadframe.
17. The method of claim 12 , further including providing the substrate to include a protrusion extending from a surface of the substrate.
18. The method of claim 12 , further including forming the trench outside a footprint of the semiconductor die.
19. A semiconductor device, comprising:
a substrate;
a semiconductor die disposed over the substrate;
an encapsulant deposited over the substrate and semiconductor die; and
an opening formed in the substrate and extending into the encapsulant.
20. The semiconductor device of claim 19 , wherein a continuous portion of the substrate is disposed over the semiconductor die.
21. The semiconductor device of claim 19 , wherein the substrate includes a protrusion extending into the encapsulant.
22. The semiconductor device of claim 19 , further including a conductive via formed through the encapsulant over the substrate.
23. The semiconductor device of claim 19 , further including an interconnect structure formed over the semiconductor die and electrically connected to the substrate.
24. The semiconductor device of claim 19 , wherein the opening extends over the semiconductor die.