Methods of forming conductive jumper traces
Methods of forming conductive jumper traces for semiconductor devices and packages. Substrate is provided having first, second and third trace lines formed thereon, where the first trace line is between the second and third trace lines. The first trace line can be isolated with a covering layer. A conductive layer can be formed between the second and third trace lines and over the first trace line by a depositing process followed by a heating process to alter the chemical properties of the conductive layer. The resulting conductive layer is able to conform to the covering layer and serve to provide electrical connection between the second and third trace lines.
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a semiconductor die on the substrate;
forming a first conductive trace and second conductive trace on the substrate adjacent to the semiconductor die;
forming a third conductive trace on the substrate between the first conductive trace and second conductive trace;
forming a first insulating layer over the third conductive trace;
forming a first conductive layer over the first insulating layer and electrically connected to the first conductive trace and second conductive trace;
forming a bond wire extending from the semiconductor die to the first conductive trace, wherein the semiconductor die is electrically coupled to the second conductive trace by the bond wire, first conductive trace, and first conductive layer; and
depositing an encapsulant over and around the semiconductor die, bond wire, first conductive trace, second conductive trace, third conductive trace, and first conductive layer.
2. The method of claim 1 , further including forming the first conductive layer by inkjet printing, screen printing, or electro-hydro dynamic dispensing.
3. The method of claim 1 , further including:
forming a second insulating layer over the first conductive layer; and
forming a second conductive layer over the second insulating layer.
4. The method of claim 1 , further including:
forming a first opening in the first insulating layer extending to the first conductive trace;
forming a second opening in the first insulating layer extending to the second conductive trace; and
forming the first conductive layer in the first opening and second opening.
5. The method of claim 1 , further including treating the first insulating layer with a hydrophilic plasma before forming the first conductive layer.
6. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive trace and second conductive trace over the substrate;
forming a bond wire extending to the first conductive trace;
forming a first insulating layer between the first conductive trace and second conductive trace;
forming a first conductive layer over the first insulating layer and coupled between the first conductive trace and second conductive trace; and
depositing an encapsulant contacting the first conductive trace, second conductive trace and first conductive layer.
7. The method of claim 6 , further including:
disposing a semiconductor die over the substrate; and
forming the bond wire extending from the semiconductor die to the first conductive trace.
8. The method of claim 6 , further including forming the first conductive layer by inkjet printing, screen printing, or electro-hydro dynamic dispensing.
9. The method of claim 6 , further including forming the first conductive layer to contact a first end of the first conductive trace and a second end of the second conductive trace.
10. The method of claim 6 , further including:
forming a second insulating layer over the first conductive layer; and
forming a second conductive layer over the second insulating layer.
11. The method of claim 10 , further including:
forming a third conductive trace electrically connected to the second conductive layer; and
forming a fourth conductive trace electrically connected to the second conductive layer.
12. The method of claim 6 , further including treating the first insulating layer with a hydrophilic plasma before forming the first conductive layer.
13. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive trace over the substrate;
forming a bond wire extending to the first conductive trace;
forming a first insulating layer over the first conductive trace opposite the substrate; and
forming a first jumper trace extending to the first conductive trace and directly over the first insulating layer opposite the substrate.
14. The method of claim 13 , further including:
forming a second conductive trace coupled to the first jumper trace; and
forming a third conductive trace between the first conductive trace and second conductive trace.
15. The method of claim 13 , further including forming a second jumper trace over the first jumper trace.
16. The method of claim 13 , further including forming the first jumper trace through an opening in the first insulating layer.
17. The method of claim 13 , further including disposing a semiconductor die over the substrate with the bond wire extending to the semiconductor die.
18. The method of claim 13 , further including forming the first jumper trace by inkjet printing, screen printing, or electro-hydro dynamic dispensing.
19. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive trace over the substrate;
forming an insulating layer over the substrate and conductive trace and including a first opening and second opening in the insulating layer;
forming a first jumper trace coupled to the conductive trace through the first opening and extending to the second opening; and
depositing an encapsulant over and around the conductive trace and jumper trace.
20. The method of claim 19 , further including forming a second jumper trace over the first jumper trace.
21. The method of claim 19 , further including disposing a semiconductor die over the substrate.
22. The method of claim 19 , further including treating the insulating layer with a hydrophilic plasma before forming the first jumper trace.
23. The method of claim 19 , further including forming a bond wire extending to the conductive trace.