Semiconductor device and method of making bumpless flipchip interconnect structures
View Patent ↗A semiconductor device includes a substrate with contact pads. A mask is disposed over the substrate. Aluminum-wettable conductive paste is printed over the contact pads of the substrate. A semiconductor die is disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure over the contact pads of the substrate. The contact pads include aluminum. Contact pads of the semiconductor die are disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure between the contact pads of the semiconductor die and the contact pads of the substrate. The interconnect structure is formed directly on the contact pads of the substrate and semiconductor die. The contact pads of the semiconductor die are etched prior to reflowing the aluminum-wettable conductive paste. An epoxy pre-dot to maintain a separation between the semiconductor die and substrate.
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a mask over the substrate;
printing a conductive paste through the mask and over contact pads of the substrate;
forming an epoxy pre-dot over the substrate;
disposing a semiconductor die over the conductive paste; and
reflowing the conductive paste to form an interconnect structure over the contact pads of the substrate while the epoxy pre-dot maintains a separation between the semiconductor die and substrate.
2. The method of claim 1 , wherein the conductive paste and contact pads of the substrate include aluminum.
3. The method of claim 1 , further including:
disposing contact pads of the semiconductor die over the conductive paste; and
reflowing the conductive paste to form the interconnect structure between the contact pads of the semiconductor die and the contact pads of the substrate.
4. The method of claim 3 , wherein the interconnect structure is formed directly on the contact pads of the substrate and directly on the contact pads of the semiconductor die.
5. The method of claim 3 , further including etching the contact pads of the semiconductor die.
6. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a mask over the substrate;
depositing a spreadable conductive material over the substrate;
removing the mask;
disposing a semiconductor die over the spreadable conductive material; and
reflowing the spreadable conductive material to form an interconnect structure over the substrate.
7. The method of claim 6 , wherein the substrate includes contact pads comprising aluminum.
8. The method of claim 7 , further including:
disposing contact pads of the semiconductor die over the spreadable conductive material; and
reflowing the spreadable conductive material to form the interconnect structure between the contact pads of the semiconductor die and contact pads of the substrate.
9. The method of claim 8 , wherein the interconnect structure is formed directly on the contact pads of the substrate and directly on the contact pads of the semiconductor die.
10. The method of claim 8 , further including etching the contact pads of the semiconductor die prior to reflowing the spreadable conductive material.
11. The method of claim 6 , further including forming an epoxy pre-dot over the substrate to maintain a separation between the semiconductor die and substrate while reflowing the spreadable conductive material.
12. The method of claim 6 , further including forming a conductive post over a contact pad of the substrate to maintain a separation between the semiconductor die and substrate.
13. A method of making a semiconductor device, comprising:
providing a substrate;
depositing a conductive material on the substrate;
disposing a semiconductor die on the conductive material;
reflowing the conductive material to form an interconnect structure; and
forming an epoxy pre-dot over the substrate to maintain a separation between the semiconductor die and substrate while reflowing the conductive material.
14. The method of claim 13 , further including depositing the conductive material on aluminum contact pads of the substrate.
15. The method of claim 14 , further including:
disposing contact pads of the semiconductor die over the conductive material; and
reflowing the conductive material to form the interconnect structure between the contact pads of the semiconductor die and the contact pads of the substrate.
16. The method of claim 15 , wherein the interconnect structure is formed directly on the contact pads of the substrate and directly on the contact pads of the semiconductor die.
17. The method of claim 15 , further including etching the contact pads of the semiconductor die prior to reflowing the conductive material.
18. A semiconductor device, comprising:
a substrate;
a conductive material deposited on contact pads of the substrate;
a conductive post disposed over one of the contact pads of the substrate and extending into the conductive material; and
a semiconductor die disposed on the conductive material.
19. The semiconductor device of claim 18 , further including an epoxy pre-dot disposed between the semiconductor die and substrate.
20. The semiconductor device of claim 18 , wherein the conductive material is deposited on a contact pad of the semiconductor device.
21. The semiconductor device of claim 18 , wherein the conductive material includes aluminum.
22. The semiconductor device of claim 21 , wherein the contact pads of the substrate include aluminum.