Method of making an ultrahigh density vertical NAND memory device with shielding wings

1. A method of making a monolithic three dimensional NAND string, comprising:

forming a stack of alternating layers of a first layer and a second layer over a substrate, wherein the first layer comprises a conductive or semiconductor control gate material and wherein the second layer comprises an insulating material;

etching the stack to form at least one opening in the stack;

selectively etching the first layer to form first recesses;

forming a conductive or semiconductor liner in the first recesses, the conductive or semiconductor liner having a clam shape;

forming a blocking dielectric over the conductive or semiconductor liner in the first recesses;

forming a plurality of discrete charge storage segments separated from each other in the first recesses over the blocking dielectric;

forming a tunnel dielectric over a side wall of the discrete charge storage segments exposed in the at least one opening; and

forming a semiconductor channel in the at least one opening.

2. The method of claim 1 , wherein each clam-shaped liner comprises a first shielding wing which extends at least partially between a first and an adjacent second of the plurality of the discrete charge storage segments and a second shielding wing which extends at least partially between the first and an adjacent third of the plurality of the discrete charge storage segments.

3. The method of claim 2 , wherein the first and a third shielding wings are located between the first and the second discrete charge storage segments.

4. The method of claim 1 , wherein the conductive or semiconductor liner comprises a material which is the same as or different from a material of the first layer.

5. The method of claim 1 , wherein:

the semiconductor channel has a circular cross section when viewed from above; and

the step of forming the semiconductor channel in the at least one opening forms a semiconductor channel material on the side wall of the at least one opening but not in a central part of the at least one opening such that the semiconductor channel material does not completely fill the at least one opening and an insulating fill material is located in the central part of the at least one opening to completely fill the at least one opening.

6. The method of claim 1 , wherein:

the semiconductor channel has a circular cross section when viewed from above; and

the step of forming the semiconductor channel in the at least one opening completely fills the at least one opening with a semiconductor channel material.

7. The method of claim 1 , furthering comprising forming an upper electrode over the semiconductor channel and forming a lower electrode below the semiconductor channel prior to forming the stack of alternating layers.

8. The method of claim 1 , wherein the plurality of discrete charge storage segments comprise a plurality of discrete charge storage dielectric features or a plurality of floating gates.

9. The method of claim 1 , wherein:

the step of forming the blocking dielectric in the first recesses comprises forming a plurality of clam-shaped blocking dielectric segments in the first recesses between overhanging portions of the second material; and

the step of forming the plurality of discrete charge storage segments comprises forming each of the plurality of discrete charge storage segments inside an opening in a respective one of the plurality of clam-shaped blocking dielectric segments.