Stacked semiconductor devices including a master device
A stack that includes non-volatile memory devices is disclosed. One of the non-volatile memory devices in the stack is a master device, and the remaining memory device or devices is a slave device(s).
1. A system, comprising:
a stack including:
a first memory chip comprising circuitry for generating one or more of voltage signals and control signals; and
a second memory chip lacking circuitry for generating one or more of voltage signals and control signals; and
a plurality of Through-Silicon Vias extending between the first memory chip and the second memory chip, the Through-Silicon Vias connecting one or more of the voltage signals and the control signals generated by the first memory chip from the first memory chip to the second memory chip.
2. The system of claim 1 , wherein the first and second memory chips are non-volatile memory chips.
3. The system as claimed in claim 2 wherein the first memory chip is a master device and the second memory chip is a slave device.
4. The system of claim 2 , wherein only the first non-volatile memory chip includes a high voltage generator.
5. The system of claim 1 , wherein:
the first memory chip comprises circuitry for generating voltage signals; and
the generated voltage signals comprise high voltage signals for program and erase operations.
6. The system of claim 1 , further comprising a third memory chip lacking circuitry for generating one or more of voltage signals and control signals, wherein one or more of the voltage signals and the control signals generated by the first memory chip are communicated from the first memory chip to the third memory chip.
7. The system of claim 1 , further comprising a package printed circuit board, the stack connected to the package printed circuit board by flip chip and bumping.
8. The system of claim 6 , wherein:
the first memory device is larger dimensioned than the second memory device; and
the first memory device is positioned adjacent the package printed circuit board.
9. The system of claim 1 , wherein the second memory chip comprises slave device test logic configured to be driven by the first memory chip during testing.
10. The system of claim 1 , further comprising connecting the stack to a package printed circuit board by flip chip and bumping.
11. A system, comprising:
a stack including:
a master memory chip comprising circuitry for generating voltage and control signals; and
a slave memory chip comprising memory circuitry, slave memory chip lacking circuitry for generating voltage and control signals; and
a plurality of Through-Silicon Vias extending between the master memory chip and the slave memory chip, the Through-Silicon Vias connecting the voltage and control signals generated by the master memory chip from the master memory chip to the slave memory chip.
12. The system of claim 11 , wherein the master and slave memory chips are non-volatile memory chips.
13. The system of claim 11 , wherein the circuitry for generating voltage and control signals comprises a high voltage generator.
14. The system of claim 11 , wherein the generated voltage and control signals comprise high voltage signals for program and erase operations.
15. The system of claim 11 , further comprising an additional slave memory chip comprising memory circuitry and lacking circuitry for generating voltage and control signals, wherein the voltage and control signals generated by the master memory chip are communicated from the master memory chip to the additional slave memory chip.
16. The system of claim 11 , further comprising a package printed circuit board, the stack being connected to the package printed circuit board by flip chip and bumping.
17. The system of claim 16 , wherein the master memory device is positioned adjacent the package printed circuit board.
18. The system of claim 11 , wherein the slave memory chip comprises slave device test logic configured to be driven by the master memory chip during testing.
19. A method, comprising:
generating a first memory chip comprising circuitry for generating one or more of voltage signals and control signals; and
generating a second memory chip lacking circuitry for generating one or more of voltage signals and control signals; and
generating a stack comprising the first memory chip and the second memory chip by extending a plurality of Through-Silicon Vias between the first memory chip and the second memory chip, the Through-Silicon Vias connecting one or more of the voltage signals and the control signals generated by the first memory chip from the first memory chip to the second memory chip.
20. The method of claim 19 , wherein the first and second memory chips are non-volatile memory chips.