System for and method of combining CMOS inverters of multiple drive strengths to create tune-able clock inverters of variable drive strengths in hybrid tree-mesh clock distribution networks
View Patent ↗An electronic device fabrication tool uses only standard-size cells from a cell library to fabricate a clock distribution network on a semiconductor device, thereby reducing the cost of the fabrication process. Target clock drive strengths are determined to reduce skew along the clock-distribution network, and the standard size cells are combined to produce clock-driving components substantially equal to the target clock drive strengths. The cells are combined using VIA programming, by electrically coupling them by adding or removing vias connecting the cells. In hybrid tree-mesh clock distribution networks, VIA programming ensures that the binary tree portions of the network are not affected by the tuning. Preferably, the clock-driving elements are clock inverters or buffers, though other elements are able to be used to drive clock signals on the clock distribution network.
1. A computer-aided design process for manufacturing a semiconductor device having a clock distribution network thereon, the method comprising:
determining target drive strengths of clock signals for multiple sequential components on the semiconductor device;
determining groups of standard clock-driving elements on the semiconductor device, wherein each of the groups has a group drive strength equal to a sum of the drive strengths of the clock-driving elements in the group, each of the group drive strengths substantially equal to one of the target drive strengths;
determining a fabrication process for combining the clock-driving elements into the groups; and
fabricating the clock distribution network on the semiconductor device according to the fabrication process, wherein the clock distribution network includes a plurality of standard clock-driving elements in a first layer of the semiconductor device and output pins of each of the standard clock-driving elements in a second layer, and further wherein the fabricating comprises, for each of the determined groups, electrically coupling together the standard clock-driving elements of that group with vias between the first layer and the second layer.
2. The computer-aided design process of claim 1 , wherein representations of the clock-driving elements are stored in a standard-cell library.
3. The computer-aided design process of claim 1 , wherein the fabricating comprises forming the standard clock-driving elements on adjacent metal layers of the semiconductor device.
4. The computer-aided design process of claim 1 , wherein drive strengths of the standard clock-driving elements comprise 8×, 12×, and 16×.
5. The computer-aided design process of claim 1 , wherein the clock-driving elements comprise inverters, buffers, or both.
6. The computer-aided design process of claim 1 , wherein the fabrication process comprises generating a netlist defining the groups of the clock-driving elements.
7. The computer-aided design process of claim 1 , wherein determining the groups comprises a grouping criterion, the grouping criterion one of a minimizing a number of standard-size cells in a group and minimizing power dissipation in a group.
8. The computer-aided design process of claim 1 , wherein the clock-distribution comprises a hybrid tree-mesh.
9. A system for fabricating a semiconductor device containing a clock distribution network comprising:
a semiconductor device having clock-receiving elements and a clock distribution network, the network comprising a plurality of clock-driving elements on a substrate of the semiconductor device, wherein each of the clock-driving elements is for transmitting a clock signal with a corresponding drive strength;
a cell library containing macrocells representing the clock-driving elements in the clock distribution network, the macrocells all from a standard cell library;
synthesis logic configured to group combinations of the macrocells such that clock signal drive strengths of the groups correspond to required clock signal drive strengths of the clock-receiving elements on the semiconductor device; and
place-and-route logic for determining a layout of the semiconductor device.
10. The system of claim 9 , wherein the place-and-route logic forms the clock-driving elements on adjacent metal layers of the semiconductor device.
11. The system of claim 9 , wherein the clock-driving elements comprise clock inverters, buffers, or both.
12. The system of claim 9 , further comprising timing-and-analysis logic for determining skew in the clock-distribution network.
13. The system of claim 12 , further comprising extraction logic for determining whether the skew is within a pre-determined range.
14. A method of fabricating a clock distribution network comprising:
forming multiple standard-size clock-driving elements on a first layer of a multiple-layer substrate and output pins of each of the standard clock-driving elements on a second layer of the multiple-layer substrate, wherein each of the clock-driving elements is for transmitting a clock signal with a corresponding drive strength; and
combining the clock-driving elements on the multiple-layer substrate into groups by electrically coupling each of the clock-driving elements of a group together with vias between the first layer and the second layer, wherein each of the groups has a drive strength equal to a sum of drive strengths of the clock-driving elements in the group, and the groups have drive strengths in a tune-able range of values.
15. The method of claim 14 , wherein each layer on the multiple-layer substrate contains one of the standard-sized clock-driving elements.
16. The method of claim 14 , wherein at least one of the multiple layers contains two or more of the standard-size clock-driving elements.
17. The method of claim 14 , wherein the clock-driving elements comprise clock inverters, buffers, or both.
18. A semiconductor device comprising:
a clock distribution network comprising multiple standard-size clock-driving elements on at least a first layer of a substrate and output pins of each of the clock-driving elements on a second layer of the substrate, wherein each of the clock-driving elements is for transmitting a clock signal with a corresponding drive strength, the clock-driving elements combined into groups, each of the groups having a drive strength equal to a sum of the drive strengths of the clock-driving elements in the group, the groups having a tune-able range of values for driving sequential elements on the semiconductor device, wherein each of the clock-driving elements of one of the groups are electrically coupled together with vias between the first layer and the second layer.
19. The semiconductor device of claim 18 , wherein the standard-size clock-driving elements are formed on multiple layers of the substrate.
20. The semiconductor device of claim 18 , wherein the clock-driving elements comprise clock inverters, buffers, or both.
21. The semiconductor device of claim 18 , wherein the clock-distribution network is a hybrid tree-mesh clock distribution network.
22. The semiconductor device of claim 18 , wherein the semiconductor device comprises a microprocessor.