Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP
A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed.
1. A method of making a semiconductor device, comprising:
providing a first conductive layer;
forming a conductive pillar over a first surface of a first portion of the first conductive layer;
disposing a semiconductor die over the first surface of a second portion of the first conductive layer; and
forming a bump over a second surface of the first conductive layer opposite the first surface of the conductive layer to contact the first portion of the first conductive layer and second portion of the first conductive layer.
2. The method of claim 1 , further including forming a second conductive layer over the conductive pillar.
3. The method of claim 1 , further including depositing an encapsulant over the semiconductor die and conductive pillar.
4. The method of claim 1 , wherein the second portion of the first conductive layer includes an under bump metallization pad.
5. The method of claim 1 , further including removing a portion of the first conductive layer.
6. The method of claim 1 , wherein a height of the conductive pillar is less than a thickness of the semiconductor die.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive layer over the substrate;
forming a conductive pillar over the first conductive layer;
disposing a semiconductor die over the substrate;
removing the substrate after forming the first conductive layer; and
removing a portion of the first conductive layer to form an interconnect line and pad.
8. The method of claim 7 , further including:
depositing an encapsulant over the semiconductor die and conductive pillar; and
removing a portion of the encapsulant.
9. The method of claim 7 , further including forming a second conductive layer over the conductive pillar and semiconductor die.
10. The method of claim 7 , further including forming an interconnect structure to connect the first portion of the first conductive layer and second portion of the first conductive layer.
11. The method of claim 7 , wherein a height of the conductive pillar is less than a thickness of the semiconductor die.
12. The method of claim 8 , further including forming an insulating layer over the encapsulant and semiconductor die.
13. The method of claim 10 , wherein the interconnect structure includes a bump.
14. A semiconductor device, comprising:
a first conductive layer;
a conductive pillar formed over a first surface of a first portion of the first conductive layer;
a semiconductor die disposed over the first surface of a second portion of the first conductive layer, wherein a height of the conductive pillar is less than a thickness of the semiconductor die;
an encapsulant deposited around the semiconductor die and conductive pillar; and
a bump formed over a second surface of the first conductive layer opposite the first surface of the first conductive layer to contact the first portion of the first conductive layer and second portion of the first conductive layer.
15. The semiconductor device of claim 14 , wherein the first conductive layer includes an interconnect line and under bump metallization pad.
16. The semiconductor device of claim 14 , further including a second conductive layer formed over the first encapsulant.
17. The semiconductor device of claim 14 , further including an insulating layer formed over the encapsulant and semiconductor die.
18. The semiconductor device of claim 14 , wherein a thickness of the encapsulant around the conductive pillar is less than a thickness of the encapsulant around the semiconductor die.
19. A semiconductor device, comprising:
a conductive pillar;
a semiconductor die disposed adjacent to the conductive pillar, wherein a height of the conductive pillar is less than a thickness of the semiconductor die;
an encapsulant deposited over the semiconductor die and conductive pillar with the conductive pillar extending from the encapsulant; and
an interconnect structure formed over a surface of the encapsulant and semiconductor die opposite the conductive pillar to electrically contact the conductive pillar and semiconductor die;
wherein a thickness of the encapsulant around the conductive pillar is less than a thickness of the encapsulant around the semiconductor die.
20. The semiconductor device of claim 19 , further including a conductive layer, wherein the conductive pillar is formed over a first portion of the conductive layer and the semiconductor die is formed over a second portion of the conductive layer and the interconnect structure contacts the first portion and second portion of the conductive layer.
21. The semiconductor device of claim 19 , further including a conductive layer formed over the conductive pillar and semiconductor die.
22. The semiconductor device of claim 19 , wherein the interconnect structure includes a bump.
23. The semiconductor device of claim 19 , further including an insulating layer formed over the encapsulant and semiconductor die.