Semiconductor device and method of forming repassivation layer with reduced opening to contact pad of semiconductor die
View Patent ↗A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive layer.
1. A method of making a semiconductor device, comprising:
providing a semiconductor die including a first conductive layer;
forming a first insulating layer over the semiconductor die and first conductive layer;
forming an opening in the first insulating layer over the first conductive layer;
forming a second insulating layer over the first insulating layer; and
forming a via in the second insulating layer over the first conductive layer, wherein a width of the via is less than a width of the opening in the first insulating layer.
2. The method of claim 1 , further including forming a second conductive layer over the first conductive layer.
3. The method of claim 1 , further including:
forming a third insulating layer over the second insulating layer; and
forming a second conductive layer over the third insulating layer.
4. The method of claim 3 , further including forming an opening in the third insulating layer and including a width greater than a width of the via.
5. A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a first insulating layer over the semiconductor die;
forming a second insulating layer over the first insulating layer and within an opening in the first insulating layer; and
forming a via in the second insulating layer.
6. The method of claim 5 , further including forming the via over a contact pad of the semiconductor die.
7. The method of claim 5 , further including:
forming a first conductive layer over the semiconductor die; and
forming a second conductive layer over the first conductive layer.
8. The method of claim 5 , further including disposing a conductive layer in the via.
9. The method of claim 5 , further including:
forming a third insulating layer over the second insulating layer; and
forming a conductive layer over the third insulating layer.
10. The method of claim 5 , further including:
depositing an encapsulant over the semiconductor die; and
forming a conductive layer within the via and over the encapsulant.
11. A method of making a semiconductor device, comprising:
providing a substrate including a first conductive layer;
forming a first insulating layer over the substrate;
forming a second insulating layer over the first conductive layer and within an opening in the first insulating layer; and
forming a via in the second insulating layer over the first conductive layer.
12. The method of claim 11 , further including disposing a second conductive layer within the via.
13. The method of claim 11 , further including forming a second conductive layer over the first conductive layer.
14. The method of claim 11 , further including:
forming a third insulating layer over the second insulating layer;
forming an opening in the third insulating layer over the via; and
forming a second conductive layer over the third insulating layer.
15. The method of claim 11 , wherein a width of the via is less than a width of the first conductive layer.
16. The method of claim 11 , wherein the substrate includes a semiconductor die.
17. The method of claim 11 , wherein a width of the via is less than a width of the opening in the first insulating layer.
18. The method of claim 1 , further including forming a second conductive layer over the via, wherein a width of the second conductive layer is greater than a width of the via.
19. The method of claim 1 , further including forming an interconnect structure over the via.
20. The method of claim 5 , wherein a width of the via is less than a width of the opening in the first insulating layer.
21. A method of making a semiconductor device, comprising:
forming a first conductive layer;
forming a first insulating layer over the first conductive layer;
forming a second insulating layer over the first conductive layer and first insulating layer;
forming a via in the second insulating layer over the first conductive layer; and
forming a second conductive layer over the second insulating layer and within the via.
22. The method of claim 21 , wherein forming the first conductive layer includes forming the first conductive layer over a semiconductor die as a contact pad of the semiconductor die.
23. The method of claim 21 , further including forming an opening in the first insulating layer, wherein the width of the via is less than a width of the opening in the first insulating layer.
24. The method of claim 21 , further including:
forming a third insulating layer over the second insulating layer; and
forming an opening in the third insulating layer over the via.
25. The method of claim 24 , wherein a width of the opening in the third insulating layer is greater than a width of the via.