Semiconductor device and method of forming TMV and TSV in WLCSP using same carrier
View Patent ↗A semiconductor device has a semiconductor die mounted over a carrier. An encapsulant is deposited over the semiconductor die and carrier. An insulating layer is formed over the semiconductor die and encapsulant. A plurality of first vias is formed through the insulating layer and semiconductor die while mounted to the carrier. A plurality of second vias is formed through the insulating layer and encapsulant in the same direction as the first vias while the semiconductor die is mounted to the carrier. An electrically conductive material is deposited in the first vias to form conductive TSV and in the second vias to form conductive TMV. A first interconnect structure is formed over the insulating layer and electrically connected to the TSV and TMV. The carrier is removed. A second interconnect structure is formed over the semiconductor die and encapsulant and electrically connected to the TSV and TMV.
1. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited around the semiconductor die;
an insulating layer formed over the semiconductor die;
a first conductive via including a continuous linear sidewall extending through the insulating layer and semiconductor die; and
a second conductive via formed through the encapsulant.
2. The semiconductor device of claim 1 , further including a first interconnect structure formed over the insulating layer.
3. The semiconductor device of claim 2 , further including a second interconnect structure formed over the semiconductor die opposite the first interconnect structure.
4. The semiconductor device of claim 1 , wherein the encapsulant is planar with a surface of the semiconductor die.
5. The semiconductor device of claim 1 , further including an insulating material disposed within the first conductive via or second conductive via.
6. The semiconductor device of claim 1 , further including an insulating material disposed over the continuous linear sidewall of the first conductive via or a sidewall of the second conductive via.
7. A semiconductor device, comprising:
a semiconductor die;
a first insulating material deposited over and around the semiconductor die;
a first conductive via including a linear sidewall extending through the first insulating material and semiconductor die; and
a second conductive via formed through the first insulating material.
8. The semiconductor device of claim 7 , further including a first interconnect structure formed over the first insulating material.
9. The semiconductor device of claim 8 , further including a second interconnect structure formed over the semiconductor die opposite the first interconnect structure.
10. The semiconductor device of claim 7 , further including a second insulating material disposed within the first conductive via or second conductive via.
11. The semiconductor device of claim 7 , further including a second insulating material disposed over the linear sidewall of the first conductive via or a sidewall of the second conductive via.
12. The semiconductor device of claim 7 , further including a bump formed over the semiconductor die.
13. The semiconductor device of claim 7 , further including a plurality of stacked semiconductor devices electrically connected through the first conductive via and second conductive via.
14. A semiconductor device, comprising:
a semiconductor die;
a first insulating material deposited over and around the semiconductor die;
a first interconnect structure formed over the semiconductor die; and
a first conductive via extending through the first insulating material, semiconductor die, and first interconnect structure.
15. The semiconductor device of claim 14 , further including a second conductive via formed through the first insulating material.
16. The semiconductor device of claim 14 , further including a second interconnect structure opposite the first interconnect structure.
17. The semiconductor device of claim 14 , further including a second insulating material disposed within the first conductive via.
18. The semiconductor device of claim 14 , further including a second insulating material disposed over a sidewall of the first conductive via.
19. The semiconductor device of claim 14 , further including a plurality of stacked semiconductor devices electrically connected through the first interconnect structure and first conductive via.
20. A semiconductor device, comprising:
a semiconductor die;
a first insulating material deposited over and around the semiconductor die; and
a first conductive via including a continuous sidewall extending through the first insulating material and semiconductor die.
21. The semiconductor device of claim 20 , further including a first interconnect structure formed over the first insulating material.
22. The semiconductor device of claim 21 , further including a second interconnect structure formed over the semiconductor die opposite the first interconnect structure.
23. The semiconductor device of claim 20 , further including a second insulating material disposed within the first conductive via.
24. The semiconductor device of claim 20 , further including a second insulating material disposed over the continuous sidewall of the first conductive via.
25. The semiconductor device of claim 20 , further including a plurality of stacked semiconductor devices electrically connected through the first conductive via.