Stackable package by using internal stacking modules
View Patent ↗A semiconductor package comprises a substrate, a first semiconductor die mounted to the substrate, and a first double side mold (DSM) internal stackable module (ISM) bonded directly to the first semiconductor die through a first adhesive. The first DSM ISM includes a first molding compound, and a second semiconductor die disposed in the first molding compound. The semiconductor package further comprises a first electrical connection coupled between the first semiconductor die and the substrate, and a second electrical connection coupled between the first DSM ISM and the substrate.
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first semiconductor die over the substrate;
providing a first double side mold (DSM) internal stackable module (ISM) by,
(a) providing a platform including conductive traces formed in the platform,
(b) disposing a second semiconductor die over a first surface of the platform,
(c) disposing a third semiconductor die over a second surface of the platform opposite the first surface of the platform, and
(d) depositing a first encapsulant over the second semiconductor die and third semiconductor die;
disposing the first DSM ISM over the first semiconductor die after depositing the first encapsulant over the first semiconductor die and third semiconductor die
forming a first bond wire between the platform and substrate; and
depositing a second encapsulant over the first bond wire, substrate, and first DSM ISM including depositing the second encapsulant over the second semiconductor die and third semiconductor die.
2. The method of claim 1 , further including disposing a second DSM ISM over the first DSM ISM.
3. The method of claim 2 , further including forming a second bond wire between the second DSM ISM and substrate.
4. The method of claim 1 , further including forming a second bond wire between the first semiconductor die and substrate.
5. The method of claim 1 , further including:
disposing an interposer over the first DSM ISM prior to depositing the second encapsulant;
depositing the second encapsulant over the interposer, first DSM ISM, first bond wire, and substrate; and
forming an opening in the second encapsulant extending to the interposer.
6. The method of claim 5 , further including forming a second bond wire between the interposer and platform.
7. A method of making a semiconductor device, comprising:
providing a substrate;
providing a first double side mold (DSM) internal stackable module (ISM) by,
(a) providing a platform,
(b) disposing a first semiconductor die over a first surface of the platform,
(c) disposing a second semiconductor die over a second surface of the platform opposite the first surface of the platform, and
(d) depositing a first encapsulant over the first semiconductor die and second semiconductor die completely embedding the first and second semiconductor die;
disposing the first DSM ISM over the substrate;
forming a first bond wire between the platform and substrate; and
depositing a second encapsulant over the first DSM ISM, first bond wire, and substrate.
8. The method of claim 7 , further including disposing a third semiconductor die over the substrate.
9. The method of claim 7 , further including disposing a second DSM ISM over the first DSM ISM.
10. The method of claim 9 , further including forming a second bond wire between the second DSM ISM and substrate.
11. The method of claim 7 , further including:
forming a second bond wire between the first semiconductor die and platform; and
forming a third bond wire between the second semiconductor die and platform.
12. The method of claim 7 , further including:
disposing an interposer over the first DSM ISM prior to depositing the second encapsulant;
depositing the second encapsulant over the interposer, first DSM ISM, first bond wire, and substrate; and
forming an opening in the second encapsulant extending to the interposer.
13. The method of claim 12 , further including forming a second bond wire between the interposer and platform.
14. A method of making a semiconductor device, comprising:
providing a substrate;
providing a first double side mold (DSM) internal stackable module (ISM);
disposing the first DSM ISM over the substrate;
forming a first bond wire between the first DSM ISM and substrate;
depositing a first encapsulant over the first DSM ISM, first bond wire, and substrate;
disposing an interposer over the first DSM ISM prior to depositing the first encapsulant;
depositing the first encapsulant over the interposer, first DSM ISM, first bond wire, and substrate; and
forming an opening in the first encapsulant extending to the interposer.
15. The method of claim 14 , wherein providing the first DSM ISM includes:
providing a platform;
disposing a first semiconductor die over a first surface of the platform;
disposing a second semiconductor die over a second surface of the platform opposite the first surface of the platform; and
depositing a second encapsulant over the first semiconductor die and second semiconductor die.
16. The method of claim 15 , further including:
forming a second bond wire between the first semiconductor die and platform; and
forming a third bond wire between the second semiconductor die and platform.
17. The method of claim 14 , further including disposing a semiconductor die over the substrate.
18. The method of claim 14 , further including:
disposing a second DSM ISM over the first DSM ISM; and
forming a second bond wire between the second DSM ISM and substrate.
19. A method of making a semiconductor device, comprising:
providing a substrate;
providing a first double side mold (DSM) internal stackable module (ISM);
disposing the first DSM ISM over the substrate;
depositing a first encapsulant over the first DSM ISM and substrate;
disposing an interposer over the first DSM ISM prior to depositing the first encapsulant;
depositing the first encapsulant over the interposer, first DSM ISM and substrate; and
forming an opening in the first encapsulant extending to the interposer.
20. The method of claim 19 , wherein providing the first DSM ISM includes:
providing a platform;
disposing a first semiconductor die over a first surface of the platform;
disposing a second semiconductor die over a second surface of the platform opposite the first surface of the platform; and
depositing a second encapsulant over the first semiconductor die and second semiconductor die.
21. The method of claim 20 , further including forming a bond wire between the first semiconductor die and platform.
22. The method of claim 19 , further including disposing a semiconductor die over the substrate.
23. The method of claim 19 , further including disposing a second DSM ISM over the first DSM ISM.