Semiconductor device and method of forming a shielding layer between stacked semiconductor die
A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.
1. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
forming a shielding layer over the first semiconductor die;
providing a bond wire electrically connected between the shielding layer and a ground point; and
disposing a second semiconductor die over the shielding layer with the bond wire disposed between the first semiconductor die and second semiconductor die.
2. The method of claim 1 , further including forming a first interconnect structure over the first semiconductor die.
3. The method of claim 2 , further including forming a second interconnect structure over the second semiconductor die opposite the first interconnect structure.
4. The method of claim 3 , further including forming a conductive pillar between the first interconnect structure and second interconnect structure.
5. The method of claim 2 , further including forming the bond wire electrically connected between the shielding layer and first interconnect structure.
6. The method of claim 1 , further including forming a conductive via through the first semiconductor die.
7. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
forming a shielding layer over the first semiconductor die;
disposing a second semiconductor die over the shielding layer; and
depositing an encapsulant around the first semiconductor die and second semiconductor die with a contact pad of the first semiconductor die and a contact pad of the second semiconductor die exposed from the encapsulant.
8. The method of claim 7 , further including forming a first interconnect structure over the encapsulant and electrically connected to the shielding layer.
9. The method of claim 8 , further including forming a second interconnect structure over the encapsulant opposite the first interconnect structure.
10. The method of claim 9 , further including forming a conductive pillar between the first interconnect structure and second interconnect structure.
11. The method of claim 7 , further including forming a bond wire between the shielding layer and first interconnect structure.
12. The method of claim 7 , further including forming a conductive via through the first semiconductor die.
13. The method of claim 7 , further including forming an insulating layer between the first semiconductor die and second semiconductor die.
14. A semiconductor device, comprising:
a first semiconductor die;
a shielding layer formed over the first semiconductor die;
a second semiconductor die disposed over the shielding layer;
an encapsulant deposited over the first semiconductor die and second semiconductor die;
a first interconnect structure disposed over the first semiconductor die and electrically connected to the shielding layer; and
a second interconnect structure disposed over the encapsulant opposite the first interconnect structure.
15. The semiconductor device of claim 14 , further including a conductive pillar disposed between the first interconnect structure and second interconnect structure.
16. The semiconductor device of claim 14 , further including a bond wired disposed between the first semiconductor die and second semiconductor die to electrically connect the shielding layer to the first interconnect structure.
17. The semiconductor device of claim 14 , further including a conductive via formed through the first semiconductor die to electrically connect the shielding layer to the first interconnect structure.
18. The semiconductor device of claim 16 , further including an insulating layer disposed between the first semiconductor die and second semiconductor die with the bond wire extending into the insulating layer.
19. A semiconductor device, comprising:
a first semiconductor die;
a ground point;
a shielding layer formed over the first semiconductor die;
a bond wire electrically connected between the shielding layer and ground point; and
a second semiconductor die disposed over the shielding layer with the bond wire disposed between the first semiconductor die and second semiconductor die.
20. The semiconductor device of claim 19 , further including a first interconnect structure formed over the first semiconductor die, wherein the first interconnect structure includes the ground point.
21. The semiconductor device of claim 20 , further including a second interconnect structure formed over the second semiconductor die opposite the first interconnect structure.
22. The semiconductor device of claim 19 , further including a conductive via formed through the first semiconductor die.
23. The semiconductor device of claim 19 , further including an insulating layer disposed between the first semiconductor die and second semiconductor die with a portion of the bond wire extending through the insulating layer.
24. A semiconductor device, comprising:
a first semiconductor die;
a shielding layer formed over the first semiconductor die;
a second semiconductor die disposed over the shielding layer; and
an encapsulant deposited around the first semiconductor die and second semiconductor die with a contact pad of the first semiconductor die and a contact pad of the second semiconductor die exposed from the encapsulant.
25. The semiconductor device of claim 24 , further including a first interconnect structure formed over the first semiconductor die and encapsulant.
26. The semiconductor device of claim 25 , further including a second interconnect structure formed over the second semiconductor die and encapsulant opposite the first interconnect structure.
27. The semiconductor device of claim 25 , further including a bond wire formed between the shielding layer and first interconnect structure.
28. The semiconductor device of claim 24 , further including a conductive via formed through the first semiconductor die to the shielding layer.
29. The semiconductor device of claim 24 , further including an insulating layer disposed between the first semiconductor die and second semiconductor die.