Power sequencing for embedded flash memory devices
View Patent ↗The invention relates to a system and method for improved power sequencing within an embedded flash memory device for a plurality of voltage sources. In one embodiment, a power sequence enabling circuit comprises a PMOS transistor, a first NMOS transistor, a second NMOS transistor, and a first voltage source. During a power up time period, a voltage output from the first voltage source ramps upward, toward a voltage output from a second voltage source through the PMOS transistor. During a power down period, a voltage from the second voltage source ramps downward toward an intermediate voltage greater than zero volts through the first NMOS transistor.
1. A power sequence enabling circuit comprising
a PMOS transistor, wherein a bulk of the PMOS transistor is connected to a source of the PMOS transistor;
a first NMOS transistor;
a second NMOS transistor; and
a first voltage source, configured to perform a power-on sequence, wherein:
during a power up time period, a voltage output from the first voltage source ramps upward, toward a voltage output from a second voltage source through the PMOS transistor, and
during a power down period, a voltage from the second voltage source ramps downward toward an intermediate voltage greater than zero volts through the first NMOS transistor.
2. The circuit of claim 1 , further comprising:
a power management control system to control enabling circuitry for the first voltage source and second voltage source.
3. The circuit for claim 2 , wherein the power management control system provides a plurality of detection ready output signals to control the enabling circuitry.
4. The circuit of claim 1 , wherein the intermediate voltage is floating.
5. The circuit of claim 1 , further comprising a third NMOS transistor.
6. A power sequence enabling circuit comprising:
a PMOS transistor;
a first NMOS transistor;
a first voltage source, configured to perform a power-on sequence, wherein:
during a power up time period, a voltage output from the first voltage source ramps upward, toward a voltage output from a second voltage source through the PMOS
during a power down period, a voltage from the second voltage source ramps downward toward an intermediate voltage greater than zero volts through the first NMOS transistor;
a first set comprising a second PMOS transistor and a third PMOS transistor, wherein the bulk of the second PMOS transistor is connected to the source of the second PMOS transistor, the bulk of the third PMOS transistor is connected to the drain of the third PMOS transistor, and the drain of the second PMOS transistor is connected to the source of the third PMOS transistor;
a second set comprising a fourth PMOS transistor and a fifth PMOS transistor, wherein the bulk of the fourth PMOS transistor is connected to the source of the fourth PMOS transistor, the bulk of the fifth PMOS transistor is connected to the drain of the fifth PMOS transistor, and the drain of the fourth PMOS transistor is connected to the source of the fifth PMOS transistor;
wherein the drain of the third PMOS transistor is connected to the drain of the fifth PMOS transistor;
a third voltage source connected to the source of the second PMOS transistor;
a fourth voltage source connected to the source of the fourth PMOS transistor; and
a power level shifting circuit with known state outputs that control the first set and the second set.
7. The circuit of claim 6 , further comprising a second NMOS transistor.
8. A method of performing a power-on sequence using a power sequence enabling circuit, the method comprising:
during a power up time period, ramping a voltage output from a first voltage source upward, toward a voltage output from a second voltage source through a PMOS transistor wherein a bulk of the PMOS transistor is connected to a source of the PMOS transistor; and
during a power down period, a ramping the voltage output from the second voltage downward toward an intermediate voltage greater than zero volts through a first NMOS transistor.