Semiconductor packages with leadframes and related methods
Methods of forming a semiconductor package. Implementations include providing a leadframe, coupling a semiconductor die or an electronic component to the leadframe, and encapsulating at least a portion of the semiconductor die or the electronic component using a mold compound leaving two or more leads of the leadframe exposed. The method may also include coating the two or more leads of the leadframe with an electrically conductive layer. The method may include fully electrically and physically singulating one or more tie bars between two or more leads of the leadframe, a lead of the two or more leads and a leadframe flag, or any combination thereof. The method may also include singulating the leadframe to form one or more semiconductor packages.
1. A method of forming a semiconductor device, comprising:
providing a leadframe;
disposing an electronic component on a flag of the leadframe;
depositing an encapsulant over the electronic component;
forming a trench fully through a lead of the leadframe;
forming a conductive layer in the trench over an entire height of a sidewall of the lead; and
singulating the leadframe through the trench.
2. The method of claim 1 , wherein the trench extends to the encapsulant.
3. The method of claim 1 , further including forming a dimple in the lead.
4. The method of claim 1 , further including:
forming a bond wire extending from the lead; and
forming the trench under the bond wire.
5. The method of claim 1 , further including singulating a tie bar connecting the flag to the lead after forming the conductive layer and before singulating the leadframe through the trench.
6. The method of claim 1 , wherein the entire height of the sidewall of the lead extends for an entire height of the lead.
7. A method of forming a semiconductor device, comprising:
providing a leadframe;
providing an electronic component;
depositing an encapsulant over the leadframe coupled to the electronic component;
forming a trench fully through a lead of the leadframe;
forming a conductive layer entirely covering a sidewall of the lead in the trench; and
singulating the leadframe through the trench.
8. The method of claim 7 , further including:
disposing the electronic component on a flag of the leadframe; and
singulating through an extension of the flag after forming the conductive layer.
9. The method of claim 7 , wherein forming the trench removes a portion of the encapsulant.
10. The method of claim 7 , further including forming the trench through a tie bar of the leadframe.
11. The method of claim 10 , further including forming a dimple in the tie bar.
12. The method of claim 7 , further including:
forming a bond wire extending from the lead; and
forming the trench under the bond wire.
13. The method of claim 7 , further including forming the conductive layer over an entire height of the lead.