Grounding techniques for backside-biased semiconductor dice and related devices, systems and methods
View Patent ↗Semiconductor devices may include a substrate and a backside-biased semiconductor die supported above the substrate. A backside surface of the backside-biased semiconductor die may be spaced from the substrate. The backside surface may be electrically connected to ground by wire bonds extending to the substrate. Methods of making semiconductor devices may involve supporting a backside-biased semiconductor die supported above a substrate, a backside surface of the backside-biased semiconductor die being spaced from the substrate. The backside surface may be electrically connected to ground by wire bonds extending to the substrate. Systems may include a sensor device, a nontransitory memory device, and at least one semiconductor device operatively connected thereto. The at least one semiconductor device may include a substrate and a backside-biased semiconductor die supported above the substrate. A backside surface of the backside-biased semiconductor die may be electrically connected to ground by wire bonds extending to the substrate.
1. A semiconductor device, comprising:
a substrate;
a backside-biased semiconductor die comprising an active surface having integrated circuitry, a backside surface located on a side of the backside-biased semiconductor die opposite the active surface, an electrically insulating material interposed between the active surface and the backside surface, and semiconductor material located on opposite sides of the electrically insulating material and extending from the electrically insulating material to the active surface and the backside surface on the opposite sides of the electrically insulating material, wherein the electrically insulating material forms an electrical barrier insulating the semiconductor material proximate to the active surface from the semiconductor material proximate to the backside surface; and
a single, contiguous mass of metal or metal alloy located directly on the backside surface, the backside surface of the backside-biased semiconductor die being spaced from the substrate and electrically connected to ground by one or more wire bonds extending from the mass of metal or metal alloy to the substrate.
2. The semiconductor device of claim 1 , wherein the metal or metal alloy comprises copper, gold, aluminum, or alloys including such metals.
3. A method of making a semiconductor device, comprising:
supporting a backside-biased semiconductor die above a substrate, the backside-biased semiconductor die comprising an active surface having integrated circuitry, a backside surface located on a side of the backside-biased semiconductor die opposite the active surface, an electrically insulating material interposed between the active surface and the backside surface, and semiconductor material located on opposite sides of the electrically insulating material and extending from the electrically insulating material to the active surface and the backside surface on the opposite sides of the electrically insulating material, wherein the electrically insulating material forms an electrical barrier insulating the semiconductor material proximate to the active surface from the semiconductor material proximate to the backside surface;
placing a single, contiguous mass of metal or metal alloy directly on the backside surface, the backside surface of the backside-biased semiconductor die being spaced from the substrate; and
electrically connecting the backside surface to ground by wire bonds extending from the mass of metal or metal alloy to the substrate.
4. The method of claim 3 , wherein placing the mass of metal or metal alloy directly on the backside surface comprises placing copper, gold, aluminum, or alloys including such metals directly on the backside surface utilizing a plating, chemical vapor deposition, or sputtering process.
5. A system, comprising:
a sensor device;
a nontransitory memory device; and
at least one semiconductor device operatively connected to the sensor device and the nontransitory memory device, the at least one semiconductor device comprising:
a substrate;
a backside-biased semiconductor die comprising an active surface having integrated circuitry, a backside surface located on a side of the backside-biased semiconductor die opposite the active surface, an electrically insulating material interposed between the active surface and the backside surface, the backside surface of the backside-biased semiconductor die being spaced from the substrate, and semiconductor material located on opposite sides of the electrically insulating material and extending from the electrically insulating material to the active surface and the backside surface on the opposite sides of the electrically insulating material, wherein the electrically insulating material forms an electrical barrier insulating the semiconductor material proximate to the active surface from the semiconductor material proximate to the backside surface; and
a single, contiguous mass of metal or metal alloy located directly on the backside surface, the backside surface being electrically connected to ground by one or more wire bonds extending from the mass of metal or metal alloy to the substrate.