Light emitting device
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
1. A light emitting device comprising:
a pixel comprising:
a first transistor over a substrate;
a first interlayer insulating film over the first transistor;
a first conductive film over the first interlayer insulating film and electrically connected to the first transistor;
an insulating film over the first conductive film;
a second interlayer insulating film over the insulating film;
a second conductive film over and in contact with the second interlayer insulating film;
a third interlayer insulating film over the second conductive film;
an organic light emitting layer over the third interlayer insulating film; and
an electrode over the organic light emitting layer,
wherein:
the second interlayer insulating film comprises a first opening overlapping with the first conductive film; and
in the first opening, the second conductive film is in contact with the insulating film.
2. The light emitting device according to claim 1 , wherein the first conductive film, the insulating film, and the second conductive film constitute a capacitor.
3. The light emitting device according to claim 2 , wherein the capacitor overlaps with the first transistor.
4. The light emitting device according to claim 1 , wherein the opening overlaps with the first transistor.
5. The light emitting device according to claim 1 , wherein the first transistor comprises silicon in an active layer.
6. The light emitting device according to claim 5 , wherein the active layer comprises an impurity region.
7. The light emitting device according to claim 1 , comprising a pixel electrode over and in contact with the second interlayer insulating film.
8. The light emitting device according to claim 7 , comprising a second transistor electrically connected to the pixel electrode.
9. The light emitting device according to claim 8 , wherein a gate of the second transistor is electrically connected to the first transistor.
10. A light emitting device comprising:
a pixel comprising:
an active layer over a substrate;
a gate insulating film over the active layer;
a gate electrode over the gate insulating film and overlapping with the active layer;
a first interlayer insulating film over the gate electrode;
a first conductive film over the first interlayer insulating film and electrically connected to the active layer;
an insulating film over the first conductive film;
a second interlayer insulating film over the insulating film;
a second conductive film over and in contact with the second interlayer insulating film;
a third interlayer insulating film over the second conductive film;
an organic light emitting layer over the third interlayer insulating film; and
an electrode over the organic light emitting layer,
wherein:
the second interlayer insulating film comprises a first opening overlapping with the first conductive film; and
in the first opening, the second conductive film is in contact with the insulating film.
11. The light emitting device according to claim 10 , wherein the first conductive film, the insulating film, and the second conductive film constitute a capacitor.
12. The light emitting device according to claim 11 , wherein the capacitor overlaps with the active layer.
13. The light emitting device according to claim 10 , wherein the opening overlaps with the active layer.
14. The light emitting device according to claim 10 , wherein the active layer comprises silicon.
15. The light emitting device according to claim 10 , wherein the active layer comprises an impurity region.
16. The light emitting device according to claim 10 , comprising a pixel electrode over and in contact with the second interlayer insulating film.
17. The light emitting device according to claim 16 , comprising a second transistor electrically connected to the pixel electrode.
18. The light emitting device according to claim 17 , wherein a gate of the second transistor is electrically connected to the first conductive film.