Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
1. An electrical junction comprising an interface layer disposed between and in contact with a contact metal and a source or drain of a transistor, the source or drain comprising silicon and the interface layer configured to provide a specific contact resistivity of the electrical junction of less than 10 Ω-μm 2 and comprising a spacer layer that is an oxide of titanium and a passivating layer that is an oxide of silicon.
2. The electrical junction of claim 1 , wherein the contact metal comprises one of: platinum (Pt), gold (Au), tungsten (W), nickel (Ni), molybdenum (Mo), copper (Cu), cobalt (Co), or palladium (Pd).
3. The electrical junction of claim 1 , wherein the source or drain comprises n-type silicon and the contact metal comprises one of: platinum (Pt), gold (Au), tungsten (W), nickel (Ni), molybdenum (Mo), copper (Cu), cobalt (Co), or palladium (Pd).
4. The electrical junction of claim 1 , wherein the passivating layer has a thickness of approximately 0.1 nm to 5 nm.
5. The electrical junction of claim 4 , wherein the source or drain of the transistor comprises an n-type doped silicon source or drain of the transistor.
6. The electrical junction of claim 5 , wherein the contact metal comprises titanium.
7. The electrical junction of claim 4 , wherein the spacer layer of the interface layer presents a potential barrier lower than 1 eV.
8. The electrical junction of claim 1 , wherein the contact metal comprises titanium.
9. The electrical junction of claim 8 , wherein the passivation layer has a thickness of approximately less than 1 nm.
10. The electrical junction of claim 9 , wherein the passivation layer is adjacent the source or drain of the transistor.
11. The electrical junction of claim 1 , wherein the source or drain of the transistor comprises an n-type source or drain of the transistor, the passivation layer is adjacent the n-type source or drain of the transistor and has a thickness of approximately 0.1 nm to 5 nm, and the contact metal comprises titanium.
12. The electrical junction of claim 11 , wherein the interface layer is configured to provide a specific contact resistivity of the electrical junction of less than 1 Ω-μm 2 .
13. The electrical junction of claim 12 , wherein the passivation layer has a thickness of approximately less than 1 nm.
14. The electrical junction of claim 1 , wherein the interface layer is configured to provide a specific contact resistivity of the electrical junction of less than 1 Ω-μm 2 .
15. The electrical junction of claim 14 , wherein the passivation layer has a thickness of approximately less than 1 nm.
16. The electrical junction of claim 15 , wherein the spacer layer of the interface layer presents a potential barrier lower than 1 eV.
17. The electrical junction of claim 16 , wherein the contact metal is titanium.
18. The electrical junction of claim 1 , wherein the contact metal comprises tungsten.
19. An electrical junction comprising an interface layer disposed between and in contact with a contact metal and an n-type silicon source or drain of a transistor, the interface layer configured to provide a specific contact resistivity of the electrical junction of less than 10 Ω-μm 2 and comprising a spacer layer presenting a potential barrier lower than 1 eV and a layer having a thickness of approximately 0.1 nm to 5 nm that is an oxide of silicon.
20. The electrical junction of claim 19 , wherein the spacer layer comprises an oxide of titanium.
21. The electrical junction of claim 20 , wherein the contact metal is titanium.
22. The electrical junction of claim 21 , wherein the interface layer configured to provide a specific contact resistivity of the electrical junction of less than 1 Ω-μm 2 .
23. The electrical junction of claim 19 , wherein the interface layer configured to provide a specific contact resistivity of the electrical junction of less than 1 Ω-μm 2 .