Liquid crystal display device and electronic device
To provide a circuit used for a shift register or the like. The basic configuration includes first to fourth transistors and four wirings. The power supply potential VDD is supplied to the first wiring and the power supply potential VSS is supplied to the second wiring. A binary digital signal is supplied to each of the third wiring and the fourth wiring. An H level of the digital signal is equal to the power supply potential VDD, and an L level of the digital signal is equal to the power supply potential VSS. There are four combinations of the potentials of the third wiring and the fourth wiring. Each of the first transistor to the fourth transistor can be turned off by any combination of the potentials. That is, since there is no transistor that is constantly on, deterioration of the characteristics of the transistors can be suppressed.
1. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a first wiring, a second wiring, a third wiring, a fourth wiring, a fifth wiring, and a sixth wiring,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the second transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the second transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the third transistor is electrically connected to a gate of the first transistor,
wherein a gate of the third transistor is electrically connected to the third wiring,
wherein one of a source and a drain of the fourth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the gate of the first transistor,
wherein one of a source and a drain of the fifth transistor is electrically connected to the fourth wiring,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a gate of the fourth transistor,
wherein a gate of the fifth transistor is electrically connected to the fourth wiring,
wherein one of a source and a drain of the sixth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the fourth transistor,
wherein a gate of the sixth transistor is electrically connected to the gate of the first transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the seventh transistor is electrically connected to the gate of the fourth transistor,
wherein a gate of the seventh transistor is electrically connected to the fifth wiring,
wherein one of a source and a drain of the eighth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the eighth transistor is electrically connected to the gate of the first transistor,
wherein a gate of the eighth transistor is electrically connected to the sixth wiring,
wherein a digital signal is supplied to the fifth wiring,
wherein a ratio (W/L) of a channel width W to a channel length L of the sixth transistor is higher than a ratio (W/L) of a channel width W to a channel length L of the fifth transistor, and
wherein a ratio (W/L) of a channel width W to a channel length L of the seventh transistor is higher than the ratio (W/L) of the channel width W to the channel length L of the fifth transistor.
2. The semiconductor device according to claim 1 , wherein each of the first to eighth transistors has a same conductivity type.
3. The semiconductor device according to claim 1 , wherein a semiconductor layer of each of the first to eighth transistors comprises an amorphous semiconductor.
4. The semiconductor device according to claim 1 , wherein at least one of the first wiring, the second wiring, the third wiring, the fourth wiring, the fifth wiring, and the sixth wiring comprise copper.
5. A display device comprising:
a pixel portion over a substrate; and
a gate driver over the substrate, the gate driver comprising the semiconductor device according to claim 1 .
6. A display module comprising:
the semiconductor device according to claim 1 ; and
an FPC electrically connected to the semiconductor device.
7. An electronic device comprising:
the display module according to claim 6 ; and
at least one of a speaker portion, a battery, and an antenna.
8. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a first wiring, a second wiring, a third wiring, a fourth wiring, a fifth wiring, and a sixth wiring,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the second transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the second transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the third transistor is electrically connected to a gate of the first transistor,
wherein a gate of the third transistor is electrically connected to the third wiring,
wherein one of a source and a drain of the fourth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the gate of the first transistor,
wherein one of a source and a drain of the fifth transistor is electrically connected to the fourth wiring,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a gate of the fourth transistor,
wherein a gate of the fifth transistor is electrically connected to the fourth wiring,
wherein one of a source and a drain of the sixth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the fourth transistor,
wherein a gate of the sixth transistor is electrically connected to the gate of the first transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the seventh transistor is electrically connected to the gate of the fourth transistor,
wherein a gate of the seventh transistor is electrically connected to the fifth wiring,
wherein one of a source and a drain of the eighth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the eighth transistor is electrically connected to the gate of the first transistor,
wherein a gate of the eighth transistor is electrically connected to the sixth wiring,
wherein a digital signal is supplied to each of the fourth wiring and the fifth wiring,
wherein a ratio (W/L) of a channel width W to a channel length L of the sixth transistor is higher than a ratio (W/L) of a channel width W to a channel length L of the fifth transistor, and
wherein a ratio (W/L) of a channel width W to a channel length L of the seventh transistor is higher than the ratio (W/L) of the channel width W to the channel length L of the fifth transistor.
9. The semiconductor device according to claim 8 , wherein each of the first to eighth transistors has a same conductivity type.
10. The semiconductor device according to claim 8 , wherein a semiconductor layer of each of the first to eighth transistors comprises an amorphous semiconductor.
11. The semiconductor device according to claim 8 , wherein at least one of the first wiring, the second wiring, the third wiring, the fourth wiring, the fifth wiring, and the sixth wiring comprise copper.
12. A display device comprising:
a pixel portion over a substrate; and
a gate driver over the substrate, the gate driver comprising the semiconductor device according to claim 8 .
13. A display module comprising:
the semiconductor device according to claim 8 ; and
an FPC electrically connected to the semiconductor device.
14. An electronic device comprising:
the display module according to claim 13 ; and
at least one of a speaker portion, a battery, and an antenna.
15. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, a eleventh transistor, a first wiring, and a second wiring,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the second transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the second transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the third transistor is electrically connected to a gate of the first transistor,
wherein one of a source and a drain of the fourth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the gate of the first transistor,
wherein a gate of the fourth transistor is electrically connected to a gate of the second transistor,
wherein one of a source and a drain of the fifth transistor is electrically connected to a gate of the fifth transistor,
wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the fourth transistor,
wherein one of a source and a drain of the sixth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the fourth transistor,
wherein a gate of the sixth transistor is electrically connected to the gate of the first transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the seventh transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the eighth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the eighth transistor is electrically connected to the gate of the first transistor,
wherein a gate of the eighth transistor is electrically connected to a gate of the seventh transistor,
wherein one of a source and a drain of the ninth transistor is electrically connected to a gate of the ninth transistor,
wherein the other of the source and the drain of the ninth transistor is electrically connected to the gate of the eighth transistor,
wherein one of a source and a drain of the tenth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the tenth transistor is electrically connected to the gate of the eighth transistor,
wherein a gate of the tenth transistor is electrically connected to the gate of the first transistor,
wherein one of a source and a drain of the eleventh transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the eleventh transistor is electrically connected to the gate of the first transistor,
wherein a digital signal is supplied to the other of the source and the drain of the first transistor,
wherein a digital signal is supplied to the other of the source and the drain of the third transistor,
wherein a digital signal is supplied to the one of the source and the drain of the fifth transistor and the gate of the fifth transistor,
wherein a digital signal is supplied to the one of the source and the drain of the ninth transistor and the gate of the ninth transistor,
wherein a digital signal is supplied to a gate of the eleventh transistor, and
wherein a ratio (W/L) of a channel width W to a channel length L of the sixth transistor is higher than a ratio (W/L) of a channel width W to a channel length L of the fifth transistor.
16. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, a eleventh transistor, a first wiring, a second wiring, a third wiring, and a fourth wiring,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the second transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the second transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the third transistor is electrically connected to a gate of the first transistor,
wherein one of a source and a drain of the fourth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the gate of the first transistor,
wherein a gate of the fourth transistor is electrically connected to a gate of the second transistor,
wherein one of a source and a drain of the fifth transistor is electrically connected to a gate of the fifth transistor,
wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the fourth transistor,
wherein one of a source and a drain of the sixth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the fourth transistor,
wherein a gate of the sixth transistor is electrically connected to the gate of the first transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the seventh transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the eighth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the eighth transistor is electrically connected to the gate of the first transistor,
wherein a gate of the eighth transistor is electrically connected to a gate of the seventh transistor,
wherein one of a source and a drain of the ninth transistor is electrically connected to a gate of the ninth transistor,
wherein the other of the source and the drain of the ninth transistor is electrically connected to the gate of the eighth transistor,
wherein one of a source and a drain of the tenth transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the tenth transistor is electrically connected to the gate of the eighth transistor,
wherein a gate of the tenth transistor is electrically connected to the gate of the first transistor,
wherein one of a source and a drain of the eleventh transistor is electrically connected to the second wiring,
wherein the other of the source and the drain of the eleventh transistor is electrically connected to the gate of the first transistor,
wherein a digital signal is supplied to the other of the source and the drain of the first transistor,
wherein a digital signal is supplied to the other of the source and the drain of the third transistor,
wherein a digital signal is supplied to the one of the source and the drain of the fifth transistor and the gate of the fifth transistor,
wherein a digital signal is supplied to the one of the source and the drain of the ninth transistor and the gate of the ninth transistor,
wherein a digital signal is supplied to a gate of the eleventh transistor,
wherein a ratio (W/L) of a channel width W to a channel length L of the sixth transistor is higher than a ratio (W/L) of a channel width W to a channel length L of the fifth transistor, and
wherein the third wiring electrically connected to the one of the source and the drain of the fifth transistor and the gate of the fifth transistor is disposed between the fourth wiring electrically connected to the other of the source and the drain of the first transistor and each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor, the ninth transistor, and the tenth transistor.