IP Library › Granted Patent US 12,272,697
Granted Patent B2
US 12,272,697 · App. 18/519,471 · Granted Apr 8, 2025

Transistor and display device

Inventors: Shunpei Yamazaki (Setagaya, JP); Toshinari Sasaki (Atsugi, JP); Junichiro Sakata (Atsugi, JP); Masashi Tsubuku (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/1225H01L27/1248H01L27/1255H01L29/24H01L29/42356H01L29/45H01L29/78606H01L29/78618H01L29/7869H01L29/78693H01L27/1214H01L29/458H01L29/4908H10K59/1213H10K59/1216H10K59/123
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Quick Facts
Patent No.
US 12,272,697
App. No.
18/519,471
Granted
Apr 8, 2025
Kind
B2
Abstract

It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Claims (59)

1. A display device comprising:

a gate electrode;

a first insulating layer over the gate electrode;

an oxide semiconductor layer over the first insulating layer;

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;

a second insulating layer over the oxide semiconductor layer; and

a third insulating layer over the second insulating layer, wherein the third insulating layer is a single monolithic layer, wherein the oxide semiconductor layer comprises indium, gallium, and zinc,

wherein the oxide semiconductor layer comprises a first region, a channel formation region, and a second region between the first region and the channel formation region,

wherein the first region and one of the source electrode and the drain electrode overlap each other,

wherein the second insulating layer is in contact with the channel formation region,

wherein the second insulating layer is in contact with an upper surface and a side surface of the oxide semiconductor layer,

wherein the third insulating layer is in contact with the second region and an upper surface of the second insulating layer,

wherein the third insulating layer comprises a region overlapping with the channel formation region,

wherein the second insulating layer is different from the third insulating layer, and

wherein resistance of the channel formation region is higher than resistance of the second region.

2. The display device according to claim 1 , wherein each of the source electrode and the drain electrode comprises copper.

3. The display device according to claim 1 , wherein the third insulating layer is in direct contact with the source electrode and the drain electrode.

4. The display device according to claim 1 , wherein the first insulating layer comprises a silicon nitride layer.

5. The display device according to claim 1 , wherein the oxide semiconductor layer comprises a crystalline region.

6. A display device comprising:

a gate electrode;

a first insulating layer over the gate electrode;

an oxide semiconductor layer over the first insulating layer;

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;

a second insulating layer over the oxide semiconductor layer; and

a third insulating layer over the second insulating layer, wherein the third insulating layer is a single monolithic layer, wherein the oxide semiconductor layer comprises indium, gallium, and zinc,

wherein the oxide semiconductor layer comprises a first region, a channel formation region, and a second region between the first region and the channel formation region,

wherein the first region and one of the source electrode and the drain electrode overlap each other,

wherein the gate electrode and the one of the source electrode and the drain electrode overlap each other,

wherein the second insulating layer is in contact with the channel formation region,

wherein the second insulating layer is in contact with an upper surface and a side surface of the oxide semiconductor layer,

wherein the third insulating layer is in contact with the second region and an upper surface of the second insulating layer,

wherein the third insulating layer comprises a region overlapping with the channel formation region,

wherein the second insulating layer is different from the third insulating layer, and

wherein resistance of the channel formation region is higher than resistance of the second region.

7. The display device according to claim 6 , wherein each of the source electrode and the drain electrode comprises copper.

8. The display device according to claim 6 , wherein the third insulating layer is in direct contact with the source electrode and the drain electrode.

9. The display device according to claim 6 , wherein the first insulating layer comprises a silicon nitride layer.

10. The display device according to claim 6 , wherein the oxide semiconductor layer comprises a crystalline region.

11. A display device comprising:

a gate electrode;

a first insulating layer over and in direct contact with the gate electrode;

an oxide semiconductor layer over and in direct contact with the first insulating layer;

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;

a second insulating layer over and in direct contact with the oxide semiconductor layer; and

and a third insulating layer over and in direct contact with the second insulating layer, wherein the third insulating layer is a single monolithic layer, wherein the oxide semiconductor layer comprises indium, gallium, and zinc,

wherein the oxide semiconductor layer comprises a first region, a channel formation region, and a second region between the first region and the channel formation region,

wherein the first region and one of the source electrode and the drain electrode overlap each other,

wherein the gate electrode and the one of the source electrode and the drain electrode overlap each other,

wherein the second insulating layer is in contact with the channel formation region,

wherein the second insulating layer is in contact with an upper surface and a side surface of the oxide semiconductor layer,

wherein the third insulating layer is in contact with the second region and an upper surface of the second insulating layer,

wherein the third insulating layer comprises a region overlapping with the channel formation region,

wherein the second insulating layer is different from the third insulating layer, and

wherein resistance of the channel formation region is higher than resistance of the second region.

12. The display device according to claim 11 , wherein each of the source electrode and the drain electrode comprises copper.

13. The display device according to claim 11 , wherein the third insulating layer is in direct contact with the source electrode and the drain electrode.

14. The display device according to claim 11 , wherein the first insulating layer comprises a silicon nitride layer.

15. The display device according to claim 11 , wherein the oxide semiconductor layer comprises a crystalline region.

Priority Claims (1)
JP 2009-204801 · Sep 4, 2009 · national
Continuity (11)
Continuation 17396832 · Aug 9, 2021
Continuation 16879853 · May 21, 2020
Continuation 16569070 · Sep 12, 2019
Continuation 15957318 · Apr 19, 2018
Continuation 15498940 · Apr 27, 2017
Continuation 15171292 · Jun 2, 2016
Continuation 14819801 · Aug 6, 2015
Continuation 14217887 · Mar 18, 2014
Continuation 13770120 · Feb 19, 2013
Continuation 12869278 · Aug 26, 2010
Related Publication 20240105733A1 · Mar 28, 2024
References Cited (396)
US 5334859A · Matsuda · 1994 [cited by applicant]
US 5644147A · Yamazaki et al. · 1997 [cited by applicant]
US 5731856A · Kim et al. · 1998 [cited by applicant]
US 5744864A · Cillessen et al. · 1998 [cited by applicant]
US 6294274B1 · Kawazoe et al. · 2001 [cited by applicant]
US 6533965B1 · Sasaki et al. · 2003 [cited by applicant]
US 6563174B2 · Kawasaki et al. · 2003 [cited by applicant]
US 6632711B2 · Sugano. et al. · 2003 [cited by applicant]
US 6689492B1 · Yamazaki et al. · 2004 [cited by applicant]
US 6693258B2 · Sugano. et al. · 2004 [cited by applicant]
US 6727522B1 · Kawasaki et al. · 2004 [cited by applicant]
US 6894674B2 · Nakajima. et al. · 2005 [cited by applicant]
US 6906344B2 · Yamazaki et al. · 2005 [cited by applicant]
US 7049190B2 · Takeda et al. · 2006 [cited by applicant]
US 7061014B2 · Hosono et al. · 2006 [cited by applicant]
US 7064346B2 · Kawasaki et al. · 2006 [cited by applicant]
US 7105868B2 · Nause et al. · 2006 [cited by applicant]
US 7147530B2 · Yamazaki et al. · 2006 [cited by applicant]
US 7154119B2 · Yamazaki et al. · 2006 [cited by applicant]
US 7211825B2 · Shih et al. · 2007 [cited by applicant]
US 7282782B2 · Hoffman et al. · 2007 [cited by applicant]
US 7297977B2 · Hoffman et al. · 2007 [cited by applicant]
US 7298084B2 · Baude et al. · 2007 [cited by applicant]
US 7323356B2 · Hosono et al. · 2008 [cited by applicant]
US 7385224B2 · Ishii et al. · 2008 [cited by applicant]
US 7388229B2 · Nishiura et al. · 2008 [cited by applicant]
US 7402506B2 · Levy et al. · 2008 [cited by applicant]
US 7411209B2 · Endo et al. · 2008 [cited by applicant]
US 7432906B2 · Nakajima. et al. · 2008 [cited by applicant]
US 7453065B2 · Saito et al. · 2008 [cited by applicant]
US 7453087B2 · Iwasaki · 2008 [cited by applicant]
US 7462862B2 · Hoffman et al. · 2008 [cited by applicant]
US 7468304B2 · Kaji et al. · 2008 [cited by applicant]
US 7501293B2 · Ito. et al. · 2009 [cited by applicant]
US 7535022B2 · Yamazaki et al. · 2009 [cited by applicant]
US 7576394B2 · Furuta et al. · 2009 [cited by applicant]
US 7642141B2 · Toyota. et al. · 2010 [cited by applicant]
US 7651896B2 · Honda et al. · 2010 [cited by applicant]
US 7674650B2 · Akimoto et al. · 2010 [cited by applicant]
US 7719185B2 · Jin et al. · 2010 [cited by applicant]
US 7732819B2 · Akimoto et al. · 2010 [cited by applicant]
US 7745798B2 · Takahashi · 2010 [cited by applicant]
US 7804091B2 · Takechi et al. · 2010 [cited by applicant]
US 7825588B2 · Yamazaki et al. · 2010 [cited by applicant]
US 7855379B2 · Hayashi et al. · 2010 [cited by applicant]
US 7977168B2 · Honda et al. · 2011 [cited by applicant]
US 8044401B2 · Yang et al. · 2011 [cited by applicant]
US 8054263B2 · Qi · 2011 [cited by applicant]
US 8088652B2 · Hayashi et al. · 2012 [cited by applicant]
US 8110436B2 · Hayashi et al. · 2012 [cited by applicant]
US 8143115B2 · Omura et al. · 2012 [cited by applicant]
US 8148721B2 · Hayashi et al. · 2012 [cited by applicant]
US 8178884B2 · Ha et al. · 2012 [cited by applicant]
US 8193045B2 · Omura et al. · 2012 [cited by applicant]
US 8193535B2 · Ha et al. · 2012 [cited by applicant]
US 8203265B2 · Yamazaki et al. · 2012 [cited by applicant]
US 8217877B2 · Fukutome · 2012 [cited by applicant]
US 8232124B2 · Takechi et al. · 2012 [cited by applicant]
US 8319219B2 · Yamazaki · 2012 [cited by applicant]
US 8330492B2 · Umezaki · 2012 [cited by applicant]
US 8373166B2 · Yamazaki · 2013 [cited by applicant]
US 8421350B2 · Yamazaki et al. · 2013 [cited by applicant]
US 8436349B2 · Sano et al. · 2013 [cited by applicant]
US 8445902B2 · Sato et al. · 2013 [cited by applicant]
US 8477085B2 · Shishido · 2013 [cited by applicant]
US 8502217B2 · Sato et al. · 2013 [cited by applicant]
US 8513661B2 · Takahashi et al. · 2013 [cited by applicant]
US 8563977B2 · Shimada et al. · 2013 [cited by applicant]
US 8659014B2 · Honda et al. · 2014 [cited by applicant]
US 8674600B2 · Yamazaki et al. · 2014 [cited by applicant]
US 8728862B2 · Ha et al. · 2014 [cited by applicant]
US 8735896B2 · Yamazaki · 2014 [cited by applicant]
US 8962457B2 · Watanabe · 2015 [cited by applicant]
US 8987988B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9070593B2 · Umezaki · 2015 [cited by applicant]
US 9153703B2 · Kaji et al. · 2015 [cited by applicant]
US 9178177B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9214473B2 · Umezaki · 2015 [cited by applicant]
US 9368641B2 · Yamazaki · 2016 [cited by examiner]
US 9461071B2 · Umezaki · 2016 [cited by applicant]
US 9640670B2 · Yamazaki · 2017 [cited by examiner]
US 9954010B2 · Umezaki · 2018 [cited by applicant]
US 10304868B2 · Umezaki · 2019 [cited by applicant]
US 11094717B2 · Yamazaki · 2021 [cited by examiner]
US 20010046027A1 · Tai et al. · 2001 [cited by applicant]
US 20020056838A1 · Ogawa · 2002 [cited by applicant]
US 20020132454A1 · Ohtsu et al. · 2002 [cited by applicant]
US 20030015703A1 · Yamazaki et al. · 2003 [cited by applicant]
US 20030189401A1 · Kido et al. · 2003 [cited by applicant]
US 20030218222A1 · Wager, III et al. · 2003 [cited by applicant]
US 20040038446A1 · Takeda et al. · 2004 [cited by applicant]
US 20040127038A1 · Carcia et al. · 2004 [cited by applicant]
US 20040195963A1 · Choi et al. · 2004 [cited by applicant]
US 20040241918A1 · Sera · 2004 [cited by applicant]
US 20050017302A1 · Hoffman · 2005 [cited by applicant]
US 20050199959A1 · Chiang et al. · 2005 [cited by applicant]
US 20050275038A1 · Shih · 2005 [cited by examiner]
US 20060035452A1 · Carcia et al. · 2006 [cited by applicant]
US 20060043377A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060043447A1 · Ishii et al. · 2006 [cited by applicant]
US 20060091793A1 · Baude et al. · 2006 [cited by applicant]
US 20060108529A1 · Saito et al. · 2006 [cited by applicant]
US 20060108636A1 · Sano et al. · 2006 [cited by applicant]
US 20060110867A1 · Yabuta et al. · 2006 [cited by applicant]
US 20060113536A1 · Kumomi et al. · 2006 [cited by applicant]
US 20060113539A1 · Sano et al. · 2006 [cited by applicant]
US 20060113549A1 · Den et al. · 2006 [cited by applicant]
US 20060113565A1 · Abe et al. · 2006 [cited by applicant]
US 20060169973A1 · Isa et al. · 2006 [cited by applicant]
US 20060170111A1 · Isa. et al. · 2006 [cited by applicant]
US 20060197092A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060208977A1 · Kimura · 2006 [cited by applicant]
US 20060228974A1 · Thelss et al. · 2006 [cited by applicant]
US 20060231882A1 · Kim et al. · 2006 [cited by applicant]
US 20060238135A1 · Kimura · 2006 [cited by applicant]
US 20060244107A1 · Sugihara et al. · 2006 [cited by applicant]
US 20060284171A1 · Levy et al. · 2006 [cited by applicant]
US 20060284172A1 · Ishii · 2006 [cited by applicant]
US 20060292777A1 · Dunbar · 2006 [cited by applicant]
US 20070024187A1 · Shin et al. · 2007 [cited by applicant]
US 20070046191A1 · Saito · 2007 [cited by applicant]
US 20070052025A1 · Yabuta · 2007 [cited by applicant]
US 20070054507A1 · Kaji et al. · 2007 [cited by applicant]
US 20070057261A1 · Jeong et al. · 2007 [cited by applicant]
US 20070072439A1 · Akimoto et al. · 2007 [cited by applicant]
US 20070090365A1 · Hayashi et al. · 2007 [cited by applicant]
US 20070108446A1 · Akimoto · 2007 [cited by applicant]
US 20070152217A1 · Lai et al. · 2007 [cited by applicant]
US 20070172591A1 · Seo et al. · 2007 [cited by applicant]
US 20070187678A1 · Hirao et al. · 2007 [cited by applicant]
US 20070187760A1 · Furuta et al. · 2007 [cited by applicant]
US 20070194379A1 · Hosono et al. · 2007 [cited by applicant]
US 20070252928A1 · Ito et al. · 2007 [cited by applicant]
US 20070272922A1 · Kim et al. · 2007 [cited by applicant]
US 20070272948A1 · Koo et al. · 2007 [cited by applicant]
US 20070287296A1 · Chang · 2007 [cited by applicant]
US 20080006877A1 · Mardilovich et al. · 2008 [cited by applicant]
US 20080038882A1 · Takechi et al. · 2008 [cited by applicant]
US 20080038929A1 · Chang · 2008 [cited by applicant]
US 20080050595A1 · Nakagawara et al. · 2008 [cited by applicant]
US 20080057618A1 · Honda et al. · 2008 [cited by applicant]
US 20080073653A1 · Iwasaki · 2008 [cited by applicant]
US 20080083927A1 · Nishiura · 2008 [cited by examiner]
US 20080083950A1 · Pan et al. · 2008 [cited by applicant]
US 20080106191A1 · Kawase · 2008 [cited by applicant]
US 20080128689A1 · Lee et al. · 2008 [cited by applicant]
US 20080129195A1 · Ishizaki et al. · 2008 [cited by applicant]
US 20080166834A1 · Kim et al. · 2008 [cited by applicant]
US 20080182358A1 · Cowdery-Corvan et al. · 2008 [cited by applicant]
US 20080224133A1 · Park et al. · 2008 [cited by applicant]
US 20080254569A1 · Hoffman et al. · 2008 [cited by applicant]
US 20080258139A1 · Ito et al. · 2008 [cited by applicant]
US 20080258140A1 · Lee et al. · 2008 [cited by applicant]
US 20080258141A1 · Park et al. · 2008 [cited by applicant]
US 20080258143A1 · Kim et al. · 2008 [cited by applicant]
US 20080291350A1 · Hayashi et al. · 2008 [cited by applicant]
US 20080296568A1 · Ryu et al. · 2008 [cited by applicant]
US 20080303020A1 · Shin et al. · 2008 [cited by applicant]
US 20080308789A1 · Miura · 2008 [cited by examiner]
US 20080308796A1 · Akimoto et al. · 2008 [cited by applicant]
US 20080308797A1 · Akimoto et al. · 2008 [cited by applicant]
US 20080308805A1 · Akimoto et al. · 2008 [cited by applicant]
US 20080308806A1 · Akimoto et al. · 2008 [cited by applicant]
US 20090008639A1 · Akimoto et al. · 2009 [cited by applicant]
US 20090068773A1 · Lai et al. · 2009 [cited by applicant]
US 20090072730A1 · Choi et al. · 2009 [cited by applicant]
US 20090073325A1 · Kuwabara et al. · 2009 [cited by applicant]
US 20090114910A1 · Chang · 2009 [cited by applicant]
US 20090134399A1 · Sakakura et al. · 2009 [cited by applicant]
US 20090152506A1 · Umeda et al. · 2009 [cited by applicant]
US 20090152541A1 · Maekawa et al. · 2009 [cited by applicant]
US 20090155940A1 · Lee et al. · 2009 [cited by applicant]
US 20090166616A1 · Uchiyama · 2009 [cited by applicant]
US 20090186437A1 · Akimoto · 2009 [cited by applicant]
US 20090186445A1 · Akimoto · 2009 [cited by applicant]
US 20090189155A1 · Akimoto · 2009 [cited by applicant]
US 20090189156A1 · Akimoto · 2009 [cited by applicant]
US 20090206332A1 · Son et al. · 2009 [cited by applicant]
US 20090206733A1 · Hwang. et al. · 2009 [cited by applicant]
US 20090239335A1 · Akimoto et al. · 2009 [cited by applicant]
US 20090269881A1 · Furuta et al. · 2009 [cited by applicant]
US 20090278122A1 · Hosono et al. · 2009 [cited by applicant]
US 20090280600A1 · Hosono et al. · 2009 [cited by applicant]
US 20090283762A1 · Kimura · 2009 [cited by applicant]
US 20090305461A1 · Akimoto et al. · 2009 [cited by applicant]
US 20100003783A1 · Akimoto · 2010 [cited by applicant]
US 20100038639A1 · Akimoto · 2010 [cited by applicant]
US 20100065844A1 · Tokunaga · 2010 [cited by applicant]
US 20100065845A1 · Nakayama · 2010 [cited by applicant]
US 20100078633A1 · Watanabe · 2010 [cited by applicant]
US 20100084648A1 · Watanabe · 2010 [cited by applicant]
US 20100092800A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100109002A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100136743A1 · Akimoto et al. · 2010 [cited by applicant]
US 20100163876A1 · Inoue et al. · 2010 [cited by applicant]
US 20100295042A1 · Yano et al. · 2010 [cited by applicant]
US 20110003427A1 · Sasaki et al. · 2011 [cited by applicant]
US 20110003428A1 · Sasaki et al. · 2011 [cited by applicant]
US 20110006302A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110008930A1 · Sasaki et al. · 2011 [cited by applicant]
US 20110008931A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110031496A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110031497A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110053322A1 · Sasaki et al. · 2011 [cited by applicant]
US 20110079777A1 · Akimoto · 2011 [cited by examiner]
US 20120132911A1 · Shimada et al. · 2012 [cited by applicant]
US 20120168750A1 · Hayashi et al. · 2012 [cited by applicant]
US 20140175437A1 · Uchiyama · 2014 [cited by applicant]
US 20150084048A1 · Hayashi et al. · 2015 [cited by applicant]
EP 1058484A · 2000 [cited by applicant]
EP 1209748A · 2002 [cited by applicant]
EP 1343134A · 2003 [cited by applicant]
EP 1737044A · 2006 [cited by applicant]
EP 1770788A · 2007 [cited by applicant]
EP 1983499A · 2008 [cited by applicant]
EP 1995787A · 2008 [cited by applicant]
EP 1998373A · 2008 [cited by applicant]
EP 1998374A · 2008 [cited by applicant]
EP 1998375A · 2008 [cited by applicant]
EP 2009695A · 2008 [cited by applicant]
EP 2144294A · 2010 [cited by applicant]
EP 2226847A · 2010 [cited by applicant]
EP 2264770A · 2010 [cited by applicant]
EP 2296443A · 2011 [cited by applicant]
JP 60198861A · 1985 [cited by applicant]
JP 63210022A · 1988 [cited by applicant]
JP 63210023A · 1988 [cited by applicant]
JP 63210024A · 1988 [cited by applicant]
JP 63215519A · 1988 [cited by applicant]
JP 63239117A · 1988 [cited by applicant]
JP 63265818A · 1988 [cited by applicant]
JP 01117068A · 1989 [cited by applicant]
JP 05251705A · 1993 [cited by applicant]
JP 08264794A · 1996 [cited by applicant]
JP 11505377 · 1999 [cited by applicant]
JP 2000044236A · 2000 [cited by applicant]
JP 2000150900A · 2000 [cited by applicant]
JP 2000216087A · 2000 [cited by applicant]
JP 2001052873A · 2001 [cited by applicant]
JP 2002076356A · 2002 [cited by applicant]
JP 2002175053A · 2002 [cited by applicant]
JP 2002289859A · 2002 [cited by applicant]
JP 2003051599A · 2003 [cited by applicant]
JP 2003086000A · 2003 [cited by applicant]
JP 2003086808A · 2003 [cited by applicant]
JP 2003273228A · 2003 [cited by applicant]
JP 2003318108A · 2003 [cited by applicant]
JP 2004103957A · 2004 [cited by applicant]
JP 2004273614A · 2004 [cited by applicant]
JP 2004273732A · 2004 [cited by applicant]
JP 2004311440A · 2004 [cited by applicant]
JP 2005085830A · 2005 [cited by applicant]
JP 2006100760A · 2006 [cited by applicant]
JP 2006293385A · 2006 [cited by applicant]
JP 2007073558A · 2007 [cited by applicant]
JP 2007073559A · 2007 [cited by applicant]
JP 2007081362A · 2007 [cited by applicant]
JP 2007096055A · 2007 [cited by applicant]
JP 2007123861A · 2007 [cited by applicant]
JP 2007165861A · 2007 [cited by applicant]
JP 2007171932A · 2007 [cited by applicant]
JP 2007194594A · 2007 [cited by applicant]
JP 2007212699A · 2007 [cited by applicant]
JP 2008009393A · 2008 [cited by applicant]
JP 2008040234A · 2008 [cited by applicant]
JP 2008040343A · 2008 [cited by applicant]
JP 2008085312A · 2008 [cited by applicant]
JP 2008535205 · 2008 [cited by applicant]
JP 2008281988A · 2008 [cited by applicant]
JP 2008283046A · 2008 [cited by applicant]
JP 2008294136A · 2008 [cited by applicant]
JP 2008299070A · 2008 [cited by applicant]
JP 2009010362A · 2009 [cited by applicant]
JP 2009031742A · 2009 [cited by applicant]
JP 2009099847A · 2009 [cited by applicant]
JP 2009099944A · 2009 [cited by applicant]
JP 2009099953A · 2009 [cited by applicant]
JP 2009141002A · 2009 [cited by applicant]
JP 2009158663A · 2009 [cited by applicant]
JP 2009176865A · 2009 [cited by applicant]
JP 2009265271A · 2009 [cited by applicant]
JP 2010021520A · 2010 [cited by applicant]
JP 2010098280A · 2010 [cited by applicant]
KR 20090022472A · 2009 [cited by applicant]
TW 494266 · 2002 [cited by applicant]
TW 588209 · 2004 [cited by applicant]
TW I265337 · 2006 [cited by applicant]
TW I276696 · 2007 [cited by applicant]
TW 200801672 · 2008 [cited by applicant]
TW 200820190 · 2008 [cited by applicant]
TW 200841475 · 2008 [cited by applicant]
TW 200842804 · 2008 [cited by applicant]
TW 200845397 · 2008 [cited by applicant]
TW 200901460 · 2009 [cited by applicant]
TW 200915577 · 2009 [cited by applicant]
TW 200923484 · 2009 [cited by applicant]
TW 200929546 · 2009 [cited by applicant]
TW 201005950 · 2010 [cited by applicant]
WO WO2004114391 · 2004 [cited by applicant]
WO WO2006025609 · 2006 [cited by applicant]
WO WO2007058329 · 2007 [cited by applicant]
WO WO2007089048 · 2007 [cited by applicant]
WO WO2008069056 · 2008 [cited by applicant]
WO WO2008069255 · 2008 [cited by applicant]
WO WO2008105250 · 2008 [cited by applicant]
WO WO2008105347 · 2008 [cited by applicant]
WO WO2008126878 · 2008 [cited by applicant]
WO WO2008126879 · 2008 [cited by applicant]
WO WO2008143021 · 2008 [cited by applicant]
WO WO2008149873 · 2008 [cited by applicant]
WO WO2009034953 · 2009 [cited by applicant]
WO WO2009041544 · 2009 [cited by applicant]
WO WO2009041713 · 2009 [cited by applicant]
WO WO2009051050 · 2009 [cited by applicant]
WO WO2009072532 · 2009 [cited by applicant]
WO WO2009093625 · 2009 [cited by applicant]
WO WO2009093722 · 2009 [cited by applicant]
WO WO2009136645 · 2009 [cited by applicant]
Takahashi.M et al., “Theoretical Analysis of Igzo Transparent Amorphous Oxide Semiconductor”, IDW '08 : Proceedings of the 15th International Display Workshops, Dec. 3, 2008, pp. 1637-1640. [cited by applicant]
Nakamura.M et al., “The phase relations in the In203—Ga2ZnO4—ZnO system at 1350° C.”, Journal of Solid State Chemistry, Aug. 1, 1991, vol. 93, No. 2, pp. 298-315, Elsevier. [cited by applicant]
Osada.T et al., “15.2: Development of Driver-Integrated Panel using Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 184-187. [cited by applicant]
Li.C et al., “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group”, Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355, Elsevier. [cited by applicant]
Lee.J et al., “World's Largest (15-INCH) XGA AMLCD Panel Using Igzo Oxide TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 625-628. [cited by applicant]
Jeong.J et al., “3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, N… [cited by applicant]
Ohara.H et al., “Amorphous In—Ga—Zn-Oxide TFTs with Suppressed Variation for 4.0 inch QVGA AMOLED Display”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 227-230, The Japan Society of Applied Physics. [cited by applicant]
Lee.M et al., “15.4:Excellent Performance of Indium-Oxide-Based Thin-Film Transistors By DC Sputtering”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 191-193. [cited by applicant]
Sakata.J et al., “Development of 4.0-IN. AMOLED Display With Driver Circuit Using Amorphous In—Ga—Zn-Oxide TFTS”, IDW '09 : Proceedings of the 16th International Display Workshops, 2009, pp. 689-692. [cited by applicant]
Park.J et al., “Amorphous Indium-Gallium-Zinc Oxide TFTS and Their Application for Large Size AMOLED”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 275-278. [cited by applicant]
Written Opinion (Application No. PCT/JP2010/063670) Dated Sep. 21, 2010. [cited by applicant]
International Search Report (Application No. PCT/JP2010/063670) Dated Sep. 21, 2010. [cited by applicant]
Fortunato.E et al., “Wide-Bandgap High-Mobility ZNO Thin-Film Transistors Produced At Room Temperature”, APPL. PHYS. LETT. (Applied Physics Letters) , Sep. 27, 2004, vol. 85, No. 13, pp. 2541-2543. [cited by applicant]
Dembo.H et al., “RFCPUS on Glass and Plastic Substrates Fabricated By TFT Transfer Technology”, IEDM 05: Technical Digest of International Electron Devices Meeting, Dec. 5, 2005, pp. 1067-1069. [cited by applicant]
Ikeda. T et al., “Full-Functional System Liquid Crystal Display Using CG-Silicon Technology”, SID Digest '04 : SID International Symposium Digest of Technical Papers, 2004, vol. 35, pp. 860-863. [cited by applicant]
Nomura.K et al., “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors”, Nature, Nov. 25, 2004, vol. 432, pp. 488-492. [cited by applicant]
Park.J et al., “Improvements in the Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors By Ar Plasma Treatment”, APPL. PHYS. LETT. (Applied Physics Letters) , Jun. 26, 2007, vol. 90, No. … [cited by applicant]
Hayashi.R et al., “42.1: Invited Paper: Improved Amorphous In—Ga—Zn—O TFTS”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 621-624. [cited by applicant]
Prins.M et al., “A Ferroelectric Transparent Thin-Film Transistor”, APPL. PHYS. LETT. (Applied Physics Letters) , Jun. 17, 1996, vol. 68, No. 25, pp. 3650-3652. [cited by applicant]
Kimizuka.N et al., “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m=3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m=7, 8, 9, and 16) in the In2O3—ZnGa2O4—ZnO System”, Journal of Solid State Chem… [cited by applicant]
Nomura.K et al., “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor”, Science, May 23, 2003, vol. 300, No. 5623, pp. 1269-1272. [cited by applicant]
Masuda.S et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, J. APPL. PHYS. (Journal of Applied Physics) , Feb. 1, 2003, vol. 93, No. 3, pp. 1624-1630. [cited by applicant]
Asakuma.N et al., “Crystallization and Reduction of SOL-GEL-Derived Zinc Oxide Films By Irradiation With Ultraviolet Lamp”, Journal of SOL-GEL Science and Technology, 2003, vol. 26, pp. 181-184. [cited by applicant]
Nomura.K et al., “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films”, APPL. PHYS. LETT. (Applied Physics Letters) , Sep. 13, 200… [cited by applicant]
Son.K et al., “42.4L: Late-News Paper: 4 Inch QVGA AMOLED Driven By the Threshold Voltage Controlled Amorphous Gizo (Ga2O—In2O3—ZnO) TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20,… [cited by applicant]
Nowatari.H et al., “60.2: Intermediate Connector With Suppressed Voltage Loss for White Tandem OLEDS”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 899-902. [cited by applicant]
Kanno.H et al., “White Stacked Electrophosphorecent Organic Light-Emitting Devices Employing MOO3 as a Charge-Generation Layer”, ADV. MATER. (Advanced Materials), 2006, vol. 18, No. 3, pp. 339-342. [cited by applicant]
Tsuda.K et al., “Ultra Low Power Consumption Technologies for Mobile TFT-LCDs”, IDW '02 : Proceedings of the 9th International Display Workshops, Dec. 4, 2002, pp. 295-298. [cited by applicant]
Van de Walle.C, “Hydrogen as a Cause of Doping in Zinc Oxide”, PHYS. REV. LETT. (Physical Review Letters), Jul. 31, 2000, vol. 85, No. 5, pp. 1012-1015. [cited by applicant]
Fung.T et al., “2-D Numerical Simulation of High Performance Amorphous In—Ga—Zn—-O TFTs for Flat Panel Displays”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 251-252, The Japan Society of Applied Physics. [cited by applicant]
Park.J et al., “High performance amorphous oxide thin film transistors with self-aligned top-gate structure”, IEDM 09: Technical Digest of International Electron Devices Meeting, Dec. 7, 2009, pp. 191-194. [cited by applicant]
Kurokawa. Y et al., “UHF RFCPUS on Flexible and Glass Substrates for Secure RFID Systems”, Journal of Solid-State Circuits , 2008, vol. 43, No. 1, pp. 292-299. [cited by applicant]
Coates.D et al., “Optical Studies of the Amorphous Liquid-Cholesteric Liquid Crystal Transition:The “Blue Phase””, Physics Letters, Sep. 10, 1973, vol. 45A, No. 2, pp. 115-116. [cited by applicant]
Cho.D et al., “21.2:AL and SN-Doped Zinc Indium Oxide Thin Film Transistors for AMOLDED Back-Plane”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 280-283. [cited by applicant]
Jin.D et al., “65.2:Distinguished Paper:World-Largest (6.5″) Flexible Full Color Top Emission AMOLDED Display on Plastic Film and Its Bending Properties”, SID Digest '09 : SID International Symposium Digest of Technical… [cited by applicant]
Park.S et al., “Challenge To Future Displays: Transparent AM-OLED Driven By Peald Grown ZNO TFT”, Imid '07 Digest, 2007, pp. 1249-1252. [cited by applicant]
Godo.H et al., “Temperature Dependence of Characteristics and Electronic Structure for Amorphous In—Ga—Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 41-44. [cited by applicant]
Osada.T et al., “Development of Driver-Integrated Panel Using Amorphous In—GA—ZN-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 33-36. [cited by applicant]
Hirao.T et al., “Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZNO TFTs) for AMLCDS”, J. SOC. INF. Display (Journal of the Society for Information Display), 2007, vol. 15, No. 1, pp. 17-22. [cited by applicant]
Hosono.H, “68.3:Invited Paper:Transparent Amorphous Oxide Semiconductors for High Performance TFT”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1830-1833. [cited by applicant]
Godo.H et al., “P-9:Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 1110-1112. [cited by applicant]
Ohara.H et al., “21.3:4.0 IN. QVGA AMOLED Display Using In—Ga—Zn-Oxide TFTs With a Novel Passivation Layer”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 284-287. [cited by applicant]
Miyasaka.M, “Suftla Flexible Microelectronics on Their Way to Business”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1673-1676. [cited by applicant]
Chern.H et al., “An Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Jul. 1, 1995, vol. 42, No. 7, pp. 1240-1246. [cited by applicant]
KIKUCHI.H et al., “39.1:Invited Paper:Optically Isotropic Nano-Structured Liquid Crystal Composites for Display Applications”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 5… [cited by applicant]
Asaoka. Y et al., “29.1: Polarizer-Free Reflective LCD Combined With Ultra Low-Power Driving Technology”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 395-398. [cited by applicant]
Lee.H et al., “Current Status of, Challenges to, and Perspective View of AM-OLED”, IDW '06 : Proceedings of the 13th International Display Workshops, Dec. 7, 2006, pp. 663-666. [cited by applicant]
Kikuchi.H et al., “62.2:Invited Paper:Fast Electro-Optical Switching in Polymer-Stabilized Liquid Crystalline Blue Phases for Display Application”, SID Digest '07 : SID International Symposium Digest of Technical Papers… [cited by applicant]
Nakamura.M, “Synthesis of Homologous Compound with New Long-Period Structure”, NIRIM Newsletter, Mar. 1, 1995, vol. 150, pp. 1-4. [cited by applicant]
Kikuchi.H et al., “Polymer-Stabilized Liquid Crystal Blue Phases”, Nature Materials, Sep. 2, 2002, vol. 1, pp. 64-68. [cited by applicant]
Kimizuka.N et al., “Spinel, YBFE2O4, and YB2FE3O7 Types of Structures for Compounds in the IN2O3 and SC2O3-A2O3-BO Systems [A; Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at Temperatures Over 1000° C.”, Journal of Soli… [cited by applicant]
Kitzerow.H et al., “Observation of Blue Phases in Chiral Networks”, Liquid Crystals, 1993, vol. 14, No. 3, pp. 911-916. [cited by applicant]
Costello.M et al., “Electron Microscopy of a Cholesteric Liquid Crystal and Its Blue Phase”, PHYS. REV. A (Physical Review. A), May 1, 1984, vol. 29, No. 5, pp. 2957-2959. [cited by applicant]
Meiboom.S et al., “Theory of the Blue Phase of Cholesteric Liquid Crystals”, PHYS. REV. LETT. (Physical Review Letters), May 4, 1981, vol. 46, No. 18, pp. 1216-1219. [cited by applicant]
Park.S et al., “42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 20… [cited by applicant]
Orita.M et al., “Mechanism of Electrical Conductivity of Transparent InGaZnO4”, PHYS. REV. B (Physical Review. B), Jan. 15, 2000, vol. 61, No. 3, pp. 1811-1816. [cited by applicant]
Nomura.K et al., “Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors”, JPN. J. APPL. PHYS. (Japanese Journal of Applied Physics) , 2006, vol. 45, No. 5B, pp. 4303-4308. [cited by applicant]
Janotti.A et al., “Native Point Defects In ZnO”, PHYS. REV. B (Physical Review. B), Oct. 4, 2007, vol. 76, No. 16, p. 165202-1-165202-22. [cited by applicant]
Park.J et al., “Electronic Transport Properties of Amorphous Indium-Gallium-Zinc Oxide Semiconductor Upon Exposure to Water”, APPL. PHYS. LETT. (Applied Physics Letters) , 2008, vol. 92, pp. 072104-1-072104-3. [cited by applicant]
Hsieh.H et al., “P-29:Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 12… [cited by applicant]
Janotti.A et al., “Oxygen Vacancies In ZnO”, APPL. PHYS. LETT. (Applied Physics Letters) , 2005, vol. 87, pp. 122102-1-122102-3. [cited by applicant]
Oba.F et al., “Defect energetics in ZnO: A hybrid Hartree-Fock density functional study”, PHYS. REV. B (Physical Review. B), 2008, vol. 77, pp. 245202-1-245202-6. [cited by applicant]
Orita.M et al., “Amorphous transparent conductive oxide InGaO3(ZnO)m (m<4):a Zn4s conductor”, Philosophical Magazine, 2001, vol. 81, No. 5, pp. 501-515. [cited by applicant]
Hosono.H et al., “Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples”, J. NON-CRYST. Solids (Journal of Non-Crystalline Solids), 1996, vol. 198-200, pp. 165-169. [cited by applicant]
Mo.Y et al., “Amorphous Oxide TFT Backplanes for Large Size AMOLED Displays”, IDW '08 : Proceedings of the 6th International Display Workshops, Dec. 3, 2008, pp. 581-584. [cited by applicant]
Kim.S et al., “High-Performance oxide thin film transistors passivated by various gas plasmas”, 214th ECS Meeting, 2008, No. 2317, ECS. [cited by applicant]
Clark.S et al., “First Principles Methods Using Castep”, Zeitschrift fur Kristallographie, 2005, vol. 220, pp. 567-570. [cited by applicant]
Lany.S et al., “Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides”, PHYS. REV. LETT. (Physical Review Letters), Jan. 26, 2007, vol. 98, pp. 045501-1-045501-4. [cited by applicant]
Park.J et al., “Dry etching of ZnO films and plasma-induced damage to optical properties”, J. VAC. SCI. Technol. B (Journal of Vacuum Science & Technology B), Mar. 1, 2003, vol. 21, No. 2, pp. 800-803. [cited by applicant]
Oh.M et al., “Improving the Gate Stability of ZnO Thin-Film Transistors With Aluminum Oxide Dielectric Layers”, J. Electrochem. SOC. (Journal of the Electrochemical Society), 2008, vol. 155, No. 12, pp. H1009-H1014. [cited by applicant]
Ueno.K et al., “Field-Effect Transistor on SrTiO3 With Sputtered AI2O3 Gate Insulator”, APPL. PHYS. LETT. (Applied Physics Letters) , Sep. 1, 2003, vol. 83, No. 9, pp. 1755-1757. [cited by applicant]
Taiwanese Office Action (Application No. 099128876) Dated May 14, 2015. [cited by applicant]
Taiwanese Office Action (Application No. 105143626) DATED May 15, 2017. [cited by applicant]
Taiwanese Office Action (Application No. 110142081) DATED Oct. 13, 2022. [cited by applicant]
Taiwanese Office Action (Application No. 112100910) DATED Sep. 12, 2023. [cited by applicant]
Taiwanese Office Action (Application No. 112100910) DATED Jan. 16, 2024. [cited by applicant]
Taiwanese Office Action (Application No. 112148579) DATED Mar. 13, 2024. [cited by applicant]
Taiwanese Office Action (Application No. 112148579) Dated Oct. 14, 2024. [cited by applicant]