Transistor and display device
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
1. A display device comprising a pixel portion, the pixel portion comprising:
a transistor comprising:
a gate electrode;
a first insulating film over the gate electrode;
an oxide semiconductor film over the first insulating film, the oxide semiconductor film comprising indium, gallium, and zinc; and
a source electrode and a drain electrode over the oxide semiconductor film, the source electrode and the drain electrode being electrically connected to the oxide semiconductor film;
a capacitor;
a light-emitting element electrically connected to the transistor, the light-emitting element comprising:
a first electrode;
an EL layer over the first electrode; and
a second electrode over the EL layer;
a second insulating film in contact with a side surface of the oxide semiconductor film; and
a third insulating film over and in contact with a top surface of the oxide semiconductor film, the third insulating film overlapping with a channel formation region of the transistor,
wherein the second insulating film is different from the third insulating film,
wherein the capacitor comprises the first insulating film, and
wherein each of the first electrode and the second electrode comprises a region overlapping with the channel formation region of the transistor and a region overlapping with the capacitor.
2. The display device according to claim 1 ,
wherein the oxide semiconductor film comprises a first region and a second region,
wherein the channel formation region is between the first region and the second region, and
wherein a carrier concentration of the first region is higher than a carrier concentration of the channel formation region.
3. The display device according to claim 1 , wherein at least one of the source electrode and the drain electrode is provided over the second insulating film.
4. The display device according to claim 1 , wherein each of the source electrode and the drain electrode comprises copper.
5. The display device according to claim 1 , further comprising a color filter between the oxide semiconductor film and the second electrode.
6. A display device comprising a pixel portion, the pixel portion comprising:
a transistor comprising:
a gate electrode over and in contact with an insulating surface;
a first insulating film over the gate electrode;
an oxide semiconductor film over the first insulating film, the oxide semiconductor film comprising indium, gallium, and zinc; and
a source electrode and a drain electrode over the oxide semiconductor film, the source electrode and the drain electrode being electrically connected to the oxide semiconductor film;
a capacitor;
a light-emitting element electrically connected to the transistor, the light-emitting element comprising:
a first electrode;
an EL layer over the first electrode; and
a second electrode over the EL layer;
a second insulating film in contact with a side surface of the oxide semiconductor film; and
a third insulating film over and in contact with a top surface of the oxide semiconductor film, the third insulating film overlapping with a channel formation region of the transistor,
wherein the second insulating film is different from the third insulating film,
wherein the capacitor comprises the first insulating film,
wherein each of the first electrode and the second electrode comprises a region overlapping with the channel formation region of the transistor and a region overlapping with the capacitor,
wherein one electrode of the capacitor is provided over and in contact with the insulating surface, and
wherein the one electrode of the capacitor comprises the same material as the gate electrode.
7. The display device according to claim 6 ,
wherein the oxide semiconductor film comprises a first region and a second region,
wherein the channel formation region is between the first region and the second region, and
wherein a carrier concentration of the first region is higher than a carrier concentration of the channel formation region.
8. The display device according to claim 6 , wherein at least one of the source electrode and the drain electrode is provided over the second insulating film.
9. The display device according to claim 6 , wherein each of the source electrode and the drain electrode comprises copper.
10. The display device according to claim 6 , further comprising a color filter between the oxide semiconductor film and the second electrode.
11. A display device comprising:
a pixel portion over a substrate, the pixel portion comprising:
a first transistor comprising:
a gate electrode over and in contact with an insulating surface;
a first insulating film over the gate electrode;
a first oxide semiconductor film over the first insulating film, the first oxide semiconductor film comprising indium, gallium, and zinc; and
a source electrode and a drain electrode over the first oxide semiconductor film, the source electrode and the drain electrode being electrically connected to the first oxide semiconductor film;
a capacitor;
a light-emitting element electrically connected to the first transistor, the light-emitting element comprising:
a first electrode;
an EL layer over the first electrode; and
a second electrode over the EL layer;
a second insulating film in contact with a side surface of the first oxide semiconductor film; and
a third insulating film over and in contact with a top surface of the first oxide semiconductor film, the third insulating film overlapping with a channel formation region of the first transistor; and
a driver circuit portion over the substrate, the driver circuit portion comprising:
a second transistor comprising:
a second oxide semiconductor film over the first insulating film, the second oxide semiconductor film comprising indium, gallium, and zinc; and
a second gate electrode over the second oxide semiconductor film,
wherein the second insulating film is different from the third insulating film,
wherein the capacitor comprises the first insulating film,
wherein each of the first electrode and the second electrode comprises a region overlapping with the channel formation region of the first transistor and a region overlapping with the capacitor,
wherein one electrode of the capacitor is provided over and in contact with the insulating surface, and
wherein the one electrode of the capacitor comprises the same material as the gate electrode.
12. The display device according to claim 11 ,
wherein the first oxide semiconductor film comprises a first region and a second region,
wherein the channel formation region is between the first region and the second region, and
wherein a carrier concentration of the first region is higher than a carrier concentration of the channel formation region.
13. The display device according to claim 11 , wherein at least one of the source electrode and the drain electrode is provided over the second insulating film.
14. The display device according to claim 11 , wherein each of the source electrode and the drain electrode comprises copper.
15. The display device according to claim 11 , further comprising a color filter between the first oxide semiconductor film and the second electrode.