LED apparatuses and methods
Light emitting diode (LED) devices and systems include a superstrate (e.g., a light-transmissive layer), LEDs attached to the superstrate at a die-attach layer formed thereon, and an encapsulant layer formed over and/or around the LEDs with a non-reflective or clear material. A method for producing LED devices and systems includes providing a superstrate with a die-attach layer formed thereon, attaching LEDs to the superstrate at the die-attach layer, forming conductive surfaces on a side of the LED opposite the die-attach layer, dispensing an encapsulant layer to at least partially encapsulate the LEDs, and forming one or more metal traces to electrically interconnect the conductive surfaces of at least some of the LEDs with each other.
1. A method of producing a light-emitting diode (LED) apparatus, comprising:
providing a light-transmissive layer;
applying a die-attach layer to the light-transmissive layer;
after applying the die-attach layer to the light-transmissive layer, attaching one or more LED to the die-attach layer;
applying electrically conductive elements to electrical contact surfaces of the one or more LED;
after applying the electrically conductive elements, applying an electrically insulating encapsulant layer to the one or more LED; and
planarizing a portion of the encapsulant layer to expose at least a portion of the electrically conductive elements and/or applying one or more layers of electrical traces over the electrically conductive elements.
2. The method of claim 1 , wherein the encapsulant layer comprises an opaque layer formed of a dark, white, and/or black material.
3. The method of claim 1 , wherein the encapsulant layer comprises a layer of clear, translucent, and/or diffuse material.
4. The method of claim 1 , comprising a plurality of LEDs.
5. The method of claim 4 , wherein the plurality of LEDs comprise red-green-blue (RGB) arrays.
6. The method of claim 1 , comprising:
providing a microstructure pattern on an outer surface of the light-transmissive layer; and/or
applying a patterned material on a light-emitting surface of one or more LEDs adjacent to the die-attach layer.
7. The method of claim 1 , comprising applying a solder mask to at least a portion of outermost electrical traces of the one or more layers of electrical traces.
8. The method of claim 1 , further comprising applying a first electrical trace between the light-transmissive layer and the one or more LED.
9. A light emitting diode (LED) apparatus, comprising:
a light-transmissive layer;
a die-attach layer disposed on the light-transmissive layer; and
one or more LED disposed on the die-attach layer;
wherein the LED apparatus is devoid of a substrate, and
wherein the one or more LED is disposed on the die-attach layer such that a light-transmitting surface of the one or more LED is in contact with the die-attach layer,
wherein the light-transmissive layer comprises a microstructure design on an outer surface of the light-transmissive layer.
10. The LED apparatus of claim 9 , further comprising an encapsulant layer disposed around and between the one or more LED, wherein the encapsulant layer comprises an electrically-insulating material.
11. The LED apparatus of claim 10 , wherein the encapsulant layer comprises an opaque layer formed of a dark, white, or black material.
12. The LED apparatus of claim 9 , wherein one or more side surfaces of the LED apparatus are beveled.
13. The LED apparatus of claim 9 , wherein the microstructure is patterned, and the pattern is aligned with the one or more LED.
14. The LED apparatus of claim 9 , comprising a red-green-blue (RGB) color array.
15. The LED apparatus of claim 9 , comprising one or more layers of electrical traces disposed on a bottom surface of the one or more LED, opposite the die-attach layer.
16. A light emitting diode (LED) apparatus, comprising:
a light-transmissive layer;
a die-attach layer disposed on the light-transmissive layer;
one or more LED disposed on the die-attach layer;
one or more layers of electrical traces disposed on a bottom surface of the one or more LED, opposite the die-attach layer; and
an electrically conductive element interposed between the one or more LED and a first layer of electrical traces.
17. The LED apparatus of claim 16 , comprising a solder mask disposed on at least one of the one or more layers of electrical traces.
18. The LED apparatus of claim 16 , wherein the one or more layers of electrical traces comprise multiple layers of electrical traces, which are interconnected across insulating layers by electrically conductive vias.
19. The LED apparatus of claim 9 , comprising non-LED electronic components.
20. The LED apparatus of claim 9 , wherein at least one of the one or more LED comprises a material applied on the light-emitting surface thereof, and wherein the material is disposed in a prescribed or random pattern formed by one or more of sapphire, metal, organic material, and inorganic material.
21. A substrate-free light emitting diode (LED) apparatus, comprising:
a light-transmissive layer;
a die-attach layer disposed on the light-transmissive layer;
one or more LED disposed on the die-attach layer such that a light-transmitting surface of the one or more LED is in contact with the die-attach layer;
an opaque encapsulant layer disposed around and between the LED;
a layer of electrical traces disposed on a bottom surface of the one or more LED, opposite the die-attach layer; and
a solder mask disposed over at least a portion of the layer of metal traces.