Vertical topology light emitting device
A light emitting device can include a metal support structure comprising Cu; an adhesion structure on the metal support structure; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, in which the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, in which a second thickness of the metal support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.
1. A light emitting device, comprising:
a metal support structure comprising Cu;
an adhesion structure on the metal support structure;
a reflective conductive contact on the adhesion structure;
a GaN-based semiconductor structure on the reflective conductive contact,
wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer,
wherein the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and
wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers;
an interface layer on the GaN-based semiconductor structure; and
a contact pad on the interface layer,
wherein a second thickness of the metal support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.
2. The device according to claim 1 , wherein the adhesion structure comprises:
a first adhesion layer; and
a second adhesion layer on the first adhesion layer.
3. The device according to claim 1 , wherein the first-type semiconductor layer is a p-type semiconductor layer and the second-type semiconductor layer is an n-type semiconductor layer.
4. The device according to claim 1 , wherein the reflective conductive contact comprises Ti.
5. The device according to claim 3 , wherein the first thickness of the GaN-based semiconductor structure is less than 1/20 thick of the second thickness of the metal support structure.
6. The device according to claim 1 , wherein the interface layer comprises a first interface layer and a second interface layer.
7. The device according to claim 1 , wherein the contact pad comprises Au.
8. The device according to claim 1 , wherein the contact pad has a diameter of 100 microns.
9. A light emitting device, comprising:
a metal support structure;
an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;
a first metal layer on the adhesion structure;
a second metal layer on the first metal layer, the second metal layer comprising Ti; and
a GaN-based semiconductor structure on the second metal layer,
wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer emitting a light on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer,
wherein the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface,
wherein the light passes through the top surface of the GaN-based semiconductor structure and the side surface of the GaN-based semiconductor structure,
wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and
wherein the first thickness of the GaN-based semiconductor structure is less than 1/20 thick of a second thickness of the metal support structure;
an inter layer on the GaN-based semiconductor structure, the inter layer comprising Al; and
a contact pad on the inter layer,
wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and
wherein the second thickness of the metal support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.
10. The device according to claim 9 , wherein the metal support structure comprises Cu.
11. The device according to claim 9 , wherein the first metal layer is thicker than the second metal layer.
12. The device according to claim 9 , wherein the inter layer comprises a first inter layer and a second inter layer.
13. A light emitting device, comprising:
a support structure;
an adhesion structure on the support structure;
a first metal layer on the adhesion structure;
a second metal layer on the first metal layer, the second metal layer comprising Ti;
a GaN-based semiconductor structure on the second metal layer,
wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the support structure, an active layer emitting a light on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer,
wherein the GaN-based semiconductor structure includes a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface,
wherein the light passes through the top surface of the GaN-based semiconductor structure and the side surface of the GaN-based semiconductor structure,
wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and
wherein the first thickness of GaN-based semiconductor structure is less than 1/20 thick of a second thickness of the support structure;
an inter layer on the GaN-based semiconductor structure; and
a contact pad on the inter layer,
wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and
wherein the second thickness of the support structure is 0.5 times less than a width of top surface of the GaN-based semiconductor structure.
14. The device according to claim 13 , wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.
15. The device according to claim 13 , wherein the first metal layer is thicker than the second metal layer.
16. The device according to claim 13 , wherein the inter layer comprises Cr.
17. The device according to claim 13 , wherein the inter layer comprises a first inter layer and a second inter layer.
18. The device according to claim 13 , wherein the support structure comprises Cu.
19. The device according to claim 13 , wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure.
20. The device according to claim 13 , wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.