Method of programming a split-gate flash memory cell with erase gate
A memory device with a memory cell and control circuitry. The memory cell includes source and drain regions formed in a semiconductor substrate, with a channel region extending there between. A floating gate is disposed over a first portion of the channel region for controlling its conductivity. A select gate is disposed over a second portion of the channel region for controlling its conductivity. A control gate is disposed over the floating gate. An erase gate is disposed over the source region and adjacent to the floating gate. The control circuitry is configured to perform a program operation by applying a negative voltage to the erase gate for causing electrons to tunnel from the erase gate to the floating gate, and perform an erase operation by applying a positive voltage to the erase gate for causing electrons to tunnel from the floating gate to the erase gate.
1. A memory device, comprising:
a semiconductor substrate;
a memory cell that includes:
a source region and a drain region formed in the substrate, with a channel region of the substrate extending between the source and drain regions,
a floating gate disposed over and insulated from a first portion of the channel region, for controlling a conductivity of the first portion of the channel region,
a select gate disposed over and insulated from a second portion of the channel region, for controlling a conductivity of a second portion of the channel region,
a control gate disposed over and insulated from the floating gate, and
an erase gate disposed over and insulated from the source region, and disposed adjacent to and insulated from the floating gate; and
a control circuitry configured to:
perform a program operation by applying a negative voltage to the erase gate for causing electrons to tunnel from the erase gate to the floating gate, and
perform an erase operation by applying a positive voltage to the erase gate for causing electrons to tunnel from the floating gate to the erase gate.
2. The memory device of claim 1 , wherein the control circuitry is further configured to apply a zero voltage to the control gate while the negative voltage is applied to the erase gate.
3. The memory device of claim 2 , wherein the control circuitry is further configured to apply a zero voltage to each of the select gate, the source region and the drain region while the negative voltage is applied to the erase gate.
4. The memory device of claim 1 , wherein the control circuitry is further configured to apply a positive voltage to the control gate while the negative voltage is applied to the erase gate.
5. The memory device of claim 4 , wherein the control circuitry is further configured to apply a zero voltage to each of the select gate, the source region and the drain region while the negative voltage is applied to the erase gate.
6. The memory device of claim 1 , wherein the control circuitry is further configured to apply a zero voltage to the control gate while the positive voltage is applied to the erase gate.
7. The memory device of claim 6 , wherein the control circuitry is further configured to apply a zero voltage to each of the select gate, the source region and the drain region while the positive voltage is applied to the erase gate.
8. The memory device of claim 1 , wherein the control circuitry is further configured to apply a negative voltage to the control gate while the positive voltage is applied to the erase gate.
9. The memory device of claim 8 , wherein the control circuitry is further configured to apply a zero voltage to each of the select gate, the source region and the drain region while the positive voltage is applied to the erase gate.
10. A method of operating a memory device that comprises a memory cell having:
a source region and a drain region formed in a semiconductor substrate, with a channel region of the substrate extending between the source and drain regions,
a floating gate disposed over and insulated from a first portion of the channel region, for controlling a conductivity of the first portion of the channel region,
a select gate disposed over and insulated from a second portion of the channel region, for controlling a conductivity of a second portion of the channel region,
a control gate disposed over and insulated from the floating gate, and
an erase gate disposed over and insulated from the source region, and disposed adjacent to and insulated from the floating gate;
the method comprising:
performing a program operation by applying a negative voltage to the erase gate to cause electrons to tunnel from the erase gate to the floating gate, and
performing an erase operation by applying a positive voltage to the erase gate to cause electrons to tunnel from the floating gate to the erase gate.
11. The method of claim 10 , further comprising:
applying a zero voltage to the control gate while the negative voltage is applied to the erase gate.
12. The method of claim 11 , further comprising:
applying a zero voltage to each of the select gate, the source region and the drain region while the negative voltage is applied to the erase gate.
13. The method of claim 10 , further comprising:
applying a positive voltage to the control gate while the negative voltage is applied to the erase gate.
14. The method of claim 13 , further comprising:
applying a zero voltage to each of the select gate, the source region and the drain region while the negative voltage is applied to the erase gate.
15. The method of claim 10 , further comprising
applying a zero voltage to the control gate while the positive voltage is applied to the erase gate.
16. The method of claim 15 , further comprising
applying a zero voltage to each of the select gate, the source region and the drain region while the positive voltage is applied to the erase gate.
17. The method of claim 10 , further comprising
applying a negative voltage to the control gate while the positive voltage is applied to the erase gate.
18. The method of claim 17 , further comprising
applying a zero voltage to each of the select gate, the source region and the drain region while the positive voltage is applied to the erase gate.