Programming of memory cell having gate capacitively coupled to floating gate
A memory device with memory cells each including source and drain regions with a channel region there between, a floating gate over a first channel region portion, a select gate over a second channel region portion, a control gate over the floating gate, and an erase gate over the source region. Control circuitry is configured to, for one of the memory cells, apply a first pulse of programming voltages that includes a first voltage applied to the control gate, perform a read operation that includes detecting currents through the channel region for different control gate voltages to determine a target control gate voltage using the detected currents that corresponds to a target current through the channel region, and apply a second pulse of programming voltages that includes a second voltage applied to the control gate that is determined from the first voltage, a nominal read voltage and the target voltage.
1. A memory device, comprising:
memory cells arranged in rows and columns, wherein each of the memory cells includes:
a source region and a drain region formed in a semiconductor substrate, with a channel region of the substrate extending between the source and drain regions,
a floating gate disposed over and insulated from a first portion of the channel region, for controlling a conductivity of the first portion of the channel region,
a select gate disposed over and insulated from a second portion of the channel region, for controlling a conductivity of a second portion of the channel region,
a control gate disposed over and insulated from the floating gate, and
an erase gate disposed over and insulated from the source region, and disposed adjacent to and insulated from the floating gate; and
control circuitry configured to, for one of the memory cells:
apply a first pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the first pulse of programming voltages includes a first voltage applied to the control gate,
perform a read operation, after the applying of the first pulse of programming voltages, that includes detecting currents through the channel region for different voltages applied to the control gate, and determining a target voltage for the control gate using the detected currents that corresponds to a target current through the channel region,
apply a second pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the second pulse of programming voltages includes a second voltage applied to the control gate that is determined from the first voltage, a nominal voltage and the target voltage, and
determine, after the applying of the first and second pulses of programming voltages, a program state of the one memory cell by applying respective read voltages to the drain region, the select gate and the control gate, while detecting any current in the channel region, wherein the read voltages include the nominal voltage applied to the control gate.
2. The memory device of claim 1 , wherein, for the one memory cell, the second voltage applied to the control gate is determined from the first voltage plus the nominal voltage minus the target voltage.
3. The memory device of claim 1 , wherein the control circuitry is further configured to, for the one memory cell, perform an erase operation, after the read operation and before the applying of the second pulse of programming voltages, that includes applying a positive voltage to the erase gate.
4. The memory device of claim 1 , wherein the control circuitry is further configured to, for the one memory cell:
perform a second read operation, after the applying of the first and second pulses of programming voltages, that includes detecting second currents through the channel region for different voltages applied to the control gate, and determining a second target voltage for the control gate using the second detected currents that corresponds to the target current through the channel region; and
apply a third pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the third pulse of programming voltages includes a third voltage applied to the control gate that is determined from the second voltage plus the nominal voltage minus the second target voltage.
5. The memory device of claim 4 , wherein the control circuitry is further configured to, for the one memory cell, perform an erase operation, after the second read operation and before the applying of the third pulse of programming voltages, that includes applying a positive voltage to the erase gate.
6. The memory device of claim 1 , wherein the control circuitry is further configured to:
simultaneously apply the first pulse of programming voltages to a first plurality of the memory cells, wherein the first plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in two or more of the columns of the memory cells; and
simultaneously apply the second pulse of programming voltages to a second plurality of the memory cells, wherein the second plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in only one of the columns of the memory cells.
7. A memory device, comprising:
memory cells arranged in rows and columns, wherein each of the memory cells includes:
a source region and a drain region formed in a semiconductor substrate, with a channel region of the substrate extending between the source and drain regions,
a floating gate disposed over and insulated from a first portion of the channel region, for controlling a conductivity of the first portion of the channel region,
a select gate disposed over and insulated from a second portion of the channel region, for controlling a conductivity of a second portion of the channel region,
a control gate disposed over and insulated from the floating gate, and
an erase gate disposed over and insulated from the source region, and disposed adjacent to and insulated from the floating gate; and
control circuitry configured to, for one of the memory cells:
apply a first pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the first pulse of programming voltages includes a first voltage applied to the erase gate,
perform a read operation, after the applying of the first pulse of programming voltages, that includes detecting currents through the channel region for different voltages applied to the erase gate, and determining a target voltage for the erase gate using the detected currents that corresponds to a target current through the channel region,
apply a second pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the second pulse of programming voltages includes a second voltage applied to the erase gate that is determined from the first voltage, a nominal voltage and the target voltage, and
determine, after the applying of the first and second pulses of programming voltages, a program state of the one memory cell by applying respective read voltages to the drain region, the select gate, the erase gate and the control gate, while detecting any current in the channel region, wherein the read voltages include the nominal voltage applied to the erase gate.
8. The memory device of claim 7 , wherein, for the one memory cell, the second voltage applied to the erase gate is determined from the first voltage plus the nominal voltage minus the target voltage.
9. The memory device of claim 7 , wherein the control circuitry is further configured to, for the one memory cell, perform an erase operation, after the read operation and before the applying of the second pulse of programming voltages, that includes applying a positive voltage to the erase gate.
10. The memory device of claim 7 , wherein the control circuitry is further configured to, for the one memory cell:
perform a second read operation, after the applying of the first and second pulses of programming voltages, that includes detecting second currents through the channel region for different voltages applied to the erase gate, and determining a second target voltage for the erase gate using the second detected currents that corresponds to the target current through the channel region; and
apply a third pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the third pulse of programming voltages includes a third voltage applied to the erase gate that is determined from the second voltage plus the nominal voltage minus the second target voltage.
11. The memory device of claim 10 , wherein the control circuitry is further configured to, for the one memory cell, perform an erase operation, after the second read operation and before the applying of the third pulse of programming voltages, that includes applying a positive voltage to the erase gate.
12. The memory device of claim 7 , wherein the control circuitry is further configured to:
simultaneously apply the first pulse of programming voltages to a first plurality of the memory cells, wherein the first plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in two or more of the columns of the memory cells; and
simultaneously apply the second pulse of programming voltages to a second plurality of the memory cells, wherein the second plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in only one of the columns of the memory cells.
13. A memory device, comprising:
memory cells arranged in rows and columns, wherein each of the memory cells includes:
a source region and a drain region formed in a semiconductor substrate, with a channel region of the substrate extending between the source and drain regions,
a floating gate disposed over and insulated from a first portion of the channel region, for controlling a conductivity of the first portion of the channel region,
a select gate disposed over and insulated from a second portion of the channel region, for controlling a conductivity of a second portion of the channel region,
a control gate disposed over and insulated from the floating gate, and
an erase gate disposed over and insulated from the source region, and disposed adjacent to and insulated from the floating gate; and
control circuitry configured to, for one of the memory cells:
apply a first pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the first pulse of programming voltages includes a first voltage applied to the control gate and a second voltage applied to the erase gate,
perform a read operation, after the applying of the first pulse of programming voltages, that includes detecting currents through the channel region for different voltages applied to the control gate and the erase gate, and determining a first target voltage for the control gate and a second target voltage for the erase gate using the detected currents that correspond to a target current through the channel region,
apply a second pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the second pulse of programming voltages includes:
a third voltage applied to the control gate that is determined from the first voltage, a first nominal voltage and the first target voltage, and
a fourth voltage applied to the erase gate that is determined from the second voltage, a second nominal voltage and the second target voltage, and
determine, after the applying of the first and second pulses of programming voltages, a program state of the one memory cell by applying respective read voltages to the drain region, the select gate, the erase gate and the control gate, while detecting any current in the channel region, wherein the read voltages include the first nominal voltage applied to the control gate and the second nominal voltage applied to the erase gate.
14. The memory device of claim 13 , wherein, for the one memory cell:
the third voltage applied to the control gate is determined from the first voltage plus the first nominal voltage minus the first target voltage; and
the fourth voltage applied to the erase gate is determined from the second voltage plus the second nominal voltage minus the second target voltage.
15. The memory device of claim 13 , wherein the control circuitry is further configured to, for the one memory cell, perform an erase operation, after the read operation and before the applying of the second pulse of programming voltages, that includes applying a positive voltage to the erase gate.
16. The memory device of claim 13 , wherein the control circuitry is further configured to:
simultaneously apply the first pulse of programming voltages to a first plurality of the memory cells, wherein the first plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in two or more of the columns of the memory cells; and
simultaneously apply the second pulse of programming voltages to a second plurality of the memory cells, wherein the second plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in only one of the columns of the memory cells.
17. A method of operating a memory device that includes memory cells arranged in rows and columns, wherein each of the memory cells includes:
a source region and a drain region formed in a semiconductor substrate, with a channel region of the substrate extending between the source and drain regions,
a floating gate disposed over and insulated from a first portion of the channel region, for controlling a conductivity of the first portion of the channel region,
a select gate disposed over and insulated from a second portion of the channel region, for controlling a conductivity of a second portion of the channel region,
a control gate disposed over and insulated from the floating gate, and
an erase gate disposed over and insulated from the source region, and disposed adjacent to and insulated from the floating gate;
the method comprising, for one of the memory cells:
applying a first pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the first pulse of programming voltages includes a first voltage applied to the control gate,
performing a read operation, after the applying of the first pulse of programming voltages, that includes detecting currents through the channel region for different voltages applied to the control gate, and determining a target voltage for the control gate using the detected currents that corresponds to a target current through the channel region,
applying a second pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the second pulse of programming voltages includes a second voltage applied to the control gate that is determined from the first voltage, a nominal voltage and the target voltage, and
determining, after the applying of the first and second pulses of programming voltages, a program state of the one memory cell by applying respective read voltages to the drain region, the select gate and the control gate, while detecting any current in the channel region, wherein the read voltages include the nominal voltage applied to the control gate.
18. The method of claim 17 , wherein, for the one memory cell, the second voltage applied to the control gate is determined from the first voltage plus the nominal voltage minus the target voltage.
19. The method of claim 17 , further comprising, for the one memory cell:
performing an erase operation, after the read operation and before the applying of the second pulse of programming voltages, that includes applying a positive voltage to the erase gate.
20. The method of claim 17 , further comprising, for the one memory cell:
performing a second read operation, after the applying of the first and second pulses of programming voltages, that includes detecting second currents through the channel region for different voltages applied to the control gate, and determining a second target voltage for the control gate using the second detected currents that corresponds to the target current through the channel region; and
applying a third pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the third pulse of programming voltages includes a third voltage applied to the control gate that is determined from the second voltage plus the nominal voltage minus the second target voltage.
21. The method of claim 20 , further comprising, for the one memory cell:
performing an erase operation, after the second read operation and before the applying of the third pulse of programming voltages, that includes applying a positive voltage to the erase gate.
22. The method of claim 17 , further comprising:
simultaneously applying the first pulse of programming voltages to a first plurality of the memory cells, wherein the first plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in two or more of the columns of the memory cells; and
simultaneously applying the second pulse of programming voltages to a second plurality of the memory cells, wherein the second plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in only one of the columns of the memory cells.
23. A method of operating a memory device that includes memory cells arranged in rows and columns, wherein each of the memory cells includes:
a source region and a drain region formed in a semiconductor substrate, with a channel region of the substrate extending between the source and drain regions,
a floating gate disposed over and insulated from a first portion of the channel region, for controlling a conductivity of the first portion of the channel region,
a select gate disposed over and insulated from a second portion of the channel region, for controlling a conductivity of a second portion of the channel region,
a control gate disposed over and insulated from the floating gate, and
an erase gate disposed over and insulated from the source region, and disposed adjacent to and insulated from the floating gate;
the method comprising, for one of the memory cells:
applying a first pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the first pulse of programming voltages includes a first voltage applied to the erase gate,
performing a read operation, after the applying of the first pulse of programming voltages, that includes detecting currents through the channel region for different voltages applied to the erase gate, and determining a target voltage for the erase gate using the detected currents that corresponds to a target current through the channel region,
applying a second pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the second pulse of programming voltages includes a second voltage applied to the erase gate that is determined from the first voltage, a nominal voltage and the target voltage, and
determining, after the applying of the first and second pulses of programming voltages, a program state of the one memory cell by applying respective read voltages to the drain region, the select gate, the erase gate and the control gate, while detecting any current in the channel region, wherein the read voltages include the nominal voltage applied to the erase gate.
24. The method of claim 23 , wherein, for the one memory cell, the second voltage applied to the erase gate is determined from the first voltage plus the nominal voltage minus the target voltage.
25. The method of claim 23 , further comprising, for the one memory cell:
performing an erase operation, after the read operation and before the applying of the second pulse of programming voltages, that includes applying a positive voltage to the erase gate.
26. The method of claim 23 , further comprising, for the one memory cell:
performing a second read operation, after the applying of the first and second pulses of programming voltages, that includes detecting second currents through the channel region for different voltages applied to the erase gate, and determining a second target voltage for the erase gate using the second detected currents that corresponds to the target current through the channel region; and
applying a third pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the third pulse of programming voltages includes a third voltage applied to the erase gate that is determined from the second voltage plus the nominal voltage minus the second target voltage.
27. The method of claim 26 , further comprising, for the one memory cell:
performing an erase operation, after the second read operation and before the applying of the third pulse of programming voltages, that includes applying a positive voltage to the erase gate.
28. The method of claim 23 , further comprising:
simultaneously applying the first pulse of programming voltages to a first plurality of the memory cells, wherein the first plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in two or more of the columns of the memory cells; and
simultaneously applying the second pulse of programming voltages to a second plurality of the memory cells, wherein the second plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in only one of the columns of the memory cells.
29. A method of operating a memory device that includes memory cells arranged in rows and columns, wherein each of the memory cells includes:
a source region and a drain region formed in a semiconductor substrate, with a channel region of the substrate extending between the source and drain regions,
a floating gate disposed over and insulated from a first portion of the channel region, for controlling a conductivity of the first portion of the channel region,
a select gate disposed over and insulated from a second portion of the channel region, for controlling a conductivity of a second portion of the channel region,
a control gate disposed over and insulated from the floating gate, and
an erase gate disposed over and insulated from the source region, and disposed adjacent to and insulated from the floating gate;
the method comprising, for one of the memory cells:
applying a first pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the first pulse of programming voltages includes a first voltage applied to the control gate and a second voltage applied to the erase gate,
performing a read operation, after the applying of the first pulse of programming voltages, that includes detecting currents through the channel region for different voltages applied to the control gate and the erase gate, and determining a first target voltage for the control gate and a second target voltage for the erase gate using the detected currents that correspond to a target current through the channel region,
applying a second pulse of programming voltages to the source region, the select gate, the erase gate and the control gate, wherein the second pulse of programming voltages includes:
a third voltage applied to the control gate that is determined from the first voltage, a first nominal voltage and the first target voltage, and
a fourth voltage applied to the erase gate that is determined from the second voltage, a second nominal voltage and the second target voltage, and
determining, after the applying of the first and second pulses of programming voltages, a program state of the one memory cell by applying respective read voltages to the drain region, the select gate, the erase gate and the control gate, while detecting any current in the channel region, wherein the read voltages include the first nominal voltage applied to the control gate and the second nominal voltage applied to the erase gate.
30. The method of claim 29 , wherein, for the one memory cell:
the third voltage applied to the control gate is determined from the first voltage plus the first nominal voltage minus the first target voltage, and
the fourth voltage applied to the erase gate is determined from the second voltage plus the second nominal voltage minus the second target voltage.
31. The method of claim 29 , further comprising, for the one memory cell:
performing an erase operation, after the read operation and before the applying of the second pulse of programming voltages, that includes applying a positive voltage to the erase gate.
32. The method of claim 29 , further comprising:
simultaneously applying the first pulse of programming voltages to a first plurality of the memory cells, wherein the first plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in two or more of the columns of the memory cells; and
simultaneously applying the second pulse of programming voltages to a second plurality of the memory cells, wherein the second plurality of the memory cells includes memory cells located in two or more of the rows of the memory cells and in only one of the columns of the memory cells.