Semiconductor structure with airgap
A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.
1. A structure, comprising:
an airgap formed in a substrate;
shallow trench isolation regions surrounding the airgap; and
a completely isolated transistor above the airgap and surrounded by the shallow trench isolation regions.
2. The structure of claim 1 , wherein the substrate is bulk silicon.
3. The structure of claim 1 , wherein the airgap is formed under an amorphous layer of material.
4. The structure of claim 3 , wherein the amorphous layer of material is bounded by the shallow trench isolation regions.
5. The structure of claim 4 , further comprising diffusion regions of the transistor formed above the amorphous layer of material and abutting the shallow trench isolation regions.
6. The structure of claim 4 , wherein the amorphous layer of material is directly over the airgap.
7. The structure of claim 6 , wherein the amorphous layer of material is ion implanted substrate material.
8. A structure, comprising:
at least one deep trench structure in a bulk substrate, on sides of an active region;
sidewall structures on sidewalls of the at least one deep trench structure; and
a lateral undercut in the bulk substrate starting at a bottom of the at least one deep trench structure;
wherein the at least one deep trench structure is completely filled with material to isolate the lateral undercut such that the isolated airgap undercut forms an airgap in the bulk substrate under the active region, wherein the material is formed directly on the sidewall structures, and wherein the isolated airgap undercut is devoid of the material on a bottom and sidewall surfaces thereof,
wherein the material is poly material.
9. The structure of claim 8 , wherein the sidewall structures comprise oxide.
10. A structure, comprising:
at least one deep trench structure in a bulk substrate, on sides of an active region;
sidewall structures on sidewalls of the at least one deep trench structure;
a lateral undercut in the bulk substrate starting at a bottom of the at least one deep trench structure; and
a transistor in the active region above the airgap,
wherein the at least one deep trench structure is completely filled with material to isolate the lateral undercut such that the isolated airgap undercut forms an airgap in the bulk substrate under the active region, wherein the material is formed directly on the sidewall structures, and wherein the isolated airgap undercut is devoid of the material on a bottom and sidewall surfaces thereof.
11. The structure of claim 10 , wherein the at least one deep trench structure is a plurality of deep trench structures surrounding the transistor.
12. The structure of claim 11 , wherein the isolated airgap undercut is devoid of the material at its upper surface between the plurality of deep trench structures.
13. The structure of claim 12 , wherein surfaces of the isolated airgap undercut are composed of bulk substrate material.
14. The structure of claim 13 , wherein the bulk substrate material is Si.
15. The structure of claim 14 , wherein the material extends into the isolated airgap undercut.
16. The structure of claim 15 , wherein the material is polysilicon material.
17. A structure, comprising:
at least one deep trench structure in a bulk substrate, on sides of an active region;
sidewall structures on sidewalls of the at least one deep trench structure; and
a lateral undercut in the bulk substrate starting at a bottom of the at least one deep trench structure;
wherein the at least one deep trench structure is completely filled with material to isolate the lateral undercut such that the isolated airgap undercut forms an airgap in the bulk substrate under the active region, wherein the material is formed directly on the sidewall structures, and wherein the isolated airgap undercut is devoid of the material on a bottom and sidewall surfaces thereof,
wherein the at least one deep trench structure is through an oxide layer, a pad nitride layer and the bulk substrate.