Device including a conductive coating disposed over emissive regions and method therefor
An opto-electronic device includes: (1) a subpixel region including: an electrode; an organic layer disposed over the electrode; and a conductive coating disposed over the organic layer; and (2) a light transmissive region including a nucleation inhibiting coating, wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the conductive coating.
1. An opto-electronic device comprising:
a subpixel region comprising:
an electrode;
an organic layer disposed over the electrode; and
a conductive coating disposed over the organic layer; and
a light transmissive region comprising a nucleation inhibiting coating,
wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the conductive coating,
wherein the nucleation inhibiting coating comprises organic molecules each including a core moiety and a terminal moiety bonded to the core moiety, and the terminal moiety includes a biphenylyl moiety, a phenyl moiety, a fluorene moiety, or a phenylene moiety.
2. The opto-electronic device of claim 1 , wherein the light transmissive region is substantially free of the conductive coating to allow light to pass through the opto-electronic device.
3. The opto-electronic device of claim 1 , wherein the conductive coating comprises magnesium.
4. The opto-electronic device of claim 3 , wherein a thickness of the conductive coating is less than 30 nm.
5. The opto-electronic device of claim 1 , wherein the nucleation inhibiting coating is characterized as having an initial sticking probability for a material of the conductive coating of no greater than 0.3.
6. The opto-electronic device of claim 1 , wherein the terminal moiety includes one or more substituent groups independently selected from deutero, fluoro, alkyl, cycloalkyl, silyl, and fluoroalkyl.
7. The opto-electronic device of claim 1 , further comprising a pixel definition layer covering an edge of the electrode, and wherein the pixel definition layer is omitted from the light transmissive region.
8. The opto-electronic device of claim 1 , further comprising a non-emissive region, wherein the non-emissive region comprises an auxiliary electrode.
9. The opto-electronic device of claim 8 , wherein the auxiliary electrode comprises a same material as the conductive coating.
10. The opto-electronic device of claim 8 , wherein the auxiliary electrode is disposed between the subpixel region and the light transmissive region.
11. The opto-electronic device of claim 1 , wherein the subpixel region further comprises a thin-film transistor in electrical communication with the electrode.
12. The opto-electronic device of claim 1 , wherein the subpixel region further comprises a nucleation promoting coating disposed between the conductive coating and the organic layer.
13. The opto-electronic device of claim 1 , wherein the nucleation inhibiting coating is characterized as having an initial sticking probability for a material of the conductive coating of no greater than 0.03.
14. An opto-electronic device comprising:
a subpixel region comprising:
an electrode;
an organic layer disposed over the electrode;
a first portion of a first conductive coating disposed over the organic layer; and
a second conductive coating disposed over the first portion of the first conductive coating; and
a light transmissive region comprising:
a second portion of the first conductive coating; and
a nucleation inhibiting coating disposed over the second portion of the first conductive coating,
wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the second conductive coating,
wherein the first conductive coating comprises ytterbium, and the second conductive coating comprises magnesium.
15. The opto-electronic device of claim 14 , wherein a thickness of the first conductive coating is less than a thickness of the second conductive coating.
16. The opto-electronic device of claim 15 , wherein the thickness of the first conductive coating is less than 10 nm.
17. The opto-electronic device of claim 16 , wherein the thickness of the second conductive coating is less than 30 nm.
18. The opto-electronic device of claim 14 , wherein the first conductive coating is light transmissive.
19. The opto-electronic device of claim 14 , wherein the nucleation inhibiting coating is characterized as having an initial sticking probability for a material of the second conductive coating of no greater than 0.3.
20. The opto-electronic device of claim 19 , wherein the nucleation inhibiting coating comprises a polycyclic aromatic compound.
21. An opto-electronic device comprising:
a subpixel region comprising:
an electrode;
an organic layer disposed over the electrode;
a first portion of a first conductive coating disposed over the organic layer; and
a second conductive coating disposed over the first portion of the first conductive coating; and
a light transmissive region comprising:
a second portion of the first conductive coating; and
a nucleation inhibiting coating disposed over the second portion of the first conductive coating,
wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the second conductive coating, wherein the nucleation inhibiting coating comprises organic molecules each including a core moiety and a terminal moiety bonded to the core moiety, and the terminal moiety includes a biphenylyl moiety, a phenyl moiety, a fluorene moiety, or a phenylene moiety.
22. The opto-electronic device of claim 21 , wherein the terminal moiety includes one or more substituent groups independently selected from deutero, fluoro, alkyl, cycloalkyl, silyl, and fluoroalkyl.
23. The opto-electronic device of claim 14 , further comprising a pixel definition layer covering an edge of the electrode, and wherein the pixel definition layer is omitted from the light transmissive region.
24. The opto-electronic device of claim 14 , further comprising a non-emissive region, wherein the non-emissive region comprises an auxiliary electrode.
25. The opto-electronic device of claim 14 , wherein the nucleation inhibiting coating is characterized as having an initial sticking probability for a material of the second conductive coating of no greater than 0.03.
26. The opto-electronic device of claim 21 , wherein a thickness of the first conductive coating is less than a thickness of the second conductive coating.
27. The opto-electronic device of claim 26 , wherein the thickness of the first conductive coating is less than 10 nm.
28. The opto-electronic device of claim 27 , wherein the first conductive coating comprises a material selected from transparent conductive oxide, magnesium, aluminum, ytterbium, silver, zinc, and cadmium.
29. The opto-electronic device of claim 28 , wherein the thickness of the second conductive coating is less than 30 nm.
30. The opto-electronic device of claim 29 , wherein the second conductive coating comprises magnesium.