Granted Patent B2

US 12,751,196 · App. 18/507,486 · Granted Sep 29, 2026

Inventors: Michael Helander (Mississauga, CA); Zhibin Wang (Mississauga, CA); Yi-Lu Chang (Mississauga, CA); Qi Wang (Mississauga, CA)

Assignee: OTI Lumionics Inc.

H10K71/191H10K59/17H10K59/879H10K71/621H10K59/12H10K59/80521H10K59/80522

Abstract

Claims (43)

1 . A layered semiconducting device comprising:

a patterning coating disposed on an underlying layer in a first portion of a lateral aspect;

a closed coating of a deposited material in a second portion of the lateral aspect; and

at least one particle structure comprising the deposited material, the at least one particle structure being at least partially disposed on an exposed layer surface of the patterning coating,

wherein the at least one particle structure has a surface coverage of no more than 15% in the first portion;

wherein the at least particle structure is disconnected from one another, such that the at least one particle structure is disposed in a discontinuous layer on the underlying layer;

wherein the at least one particle structure deposited beyond a central part of the discontinuous layer exhibits characteristics that are different from those exhibited by the at least one particle structure in such central part.

2 . The device of claim 1 , wherein the at least one particle structure covers no more than 15% of an area of the underlying layer.

3 . The device of claim 1 , wherein the discontinuous layer extends across a substantially entire lateral extent of the patterning coating.

4 . The device of claim 1 , wherein at least one of the at least one particle structure is at least partially integrated into the patterning coating.

5 . The device of claim 1 , wherein at least one of the at least one particle structure protrudes at least partially beyond the exposed layer surface of the patterning coating.

6 . The device of claim 1 , wherein at least one of the at least particle structure is disposed proximate to an interface between the patterning coating and the underlying layer.

7 . The device of claim 1 , wherein the at least one particle structure has a characteristic size that is no more than about 50 nm.

8 . The device of claim 7 , wherein the first range is substantially 0-20 nm, and the second range is substantially 20-50 nm.

9 . The device of claim 1 , wherein the at least one particle structure comprises at least one first particle structure having a first range of characteristic size and at least one second particle structure having a second range of characteristic size.

10 . The device of claim 1 , wherein the deposited material comprises at least one of: silver, ytterbium, magnesium, potassium, sodium, lithium, barium, cesium, gold, copper, aluminum, zinc, cadmium, tin, yttrium, and an alloy of any combination of any of these.

11 . The device of claim 1 , wherein the underlying layer is selected from at least one of: an electron transport layer, an electron injection layer, a metal, an alloy, and a metal oxide.

12 . The device of claim 1 , wherein the patterning coating has an initial sticking probability against deposition of the deposited material thereon that is at least one of:

no more than 0.3, and

less than an initial sticking probability of a material comprising the underlying layer against deposition of the deposited material thereon.

13 . The device of claim 1 , wherein the device is an opto-electronic device comprising at least one emissive region, each emissive region comprising:

a first electrode,

a second electrode, and

at least one semiconducting layer between the first electrode and the second electrode.

14 . The device of claim 13 , wherein the first portion comprises at least one emissive region.

15 . The device of claim 14 , wherein the underlying layer is the second electrode.

16 . The device of claim 14 , wherein the underlying layer is the at least one semiconducting layer and the at least one particle structure forms the second electrode.

17 . The device of claim 13 , wherein the device comprises a signal transmissive region.

18 . The device of claim 17 , wherein the device is adapted to accept at least one EM signal through the signal transmissive region, for exchange with at least one under-display component.

19 . The device of claim 18 , wherein an absorption spectrum of the at least one particle structure and an EM spectrum of the EM signal transmitted through the first portion have substantially no overlap.

20 . The device of claim 18 , wherein an absorption spectrum of the at least one particle structure has substantially no overlap with at least a part of at least one of: an infrared (IR) spectrum and a near infrared (NIR) spectrum, such that the at least one particle structure allows transmission of EM signal in such at least part of at least one of: the IR spectrum and the NIR spectrum.

21 . The device of claim 20 , wherein the at least one particle structure has a characteristic size that lies in a range of one of between about: 1-50 nm, 1-40 nm, 1-30 nm, 1-20 nm, 5-20 nm, and 8-15 nm.

22 . The device of claim 20 , wherein the at least one particle structure has at least one of a: mean, and median, feature size of one of between about: 5-50 nm, 5-40 nm, 5-30 nm, 5-25 nm, 5-20 nm, and 8-15 nm.

23 . The device of claim 20 , wherein the at least one particle structure absorbs EM radiation in at least one of: at least a sub-range of a visible spectrum, and an ultraviolet (UV) spectrum.

24 . The device of claim 23 , wherein a majority of the at least one particle structure has a maximum feature size of one of at least about: 40 nm, 35 nm, 30 nm, 25 nm, and 20 nm.

25 . The device of claim 23 , wherein the at least one particle structure has at least one of a: mean, and median, feature size of one of between about: 5-40 nm, 5-30 nm, 8-30 nm 10-30 nm, 8-25 nm, 10-25 nm, 8-20 nm, 10-15 nm, and 8-15 nm.

26 . The device of claim 18 , wherein an absorption spectrum of the at least one particle structure has substantially no overlap with at least a sub-range of at least one of: a visible spectrum, and a UV spectrum, such that the at least one particle structure allows transmission of EM signal in such at least sub-range of at least one of: the visible spectrum, and the UV spectrum.

27 . The device of claim 17 , wherein the first portion comprises at least part of the signal transmissive region.

28 . The device of claim 1 , further comprising at least one overlying layer at least partially covering the at least one particle structure and forming an interface with the patterning coating.

29 . The device of claim 28 , wherein the at least one overlying layer comprises at least one of:

a capping layer (CPL); and

a covering layer selected from at least one of: an outcoupling layer, a CPL, a layer of a thin film encapsulation, a polarizing layer, lithium fluoride, and an air gap.

30 . The device of claim 28 , wherein the at least one overlying layer has a refractive index that exceeds a refractive index of the patterning coating.

Assignments (1)

Continuity (6)

References Cited (400)