Opto-electronic device with nanoparticle deposited layers
A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.
1 . A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof, comprising:
at least one particle structure comprising a particle material;
the at least one particle structure being disposed on an exposed layer surface of an underlying layer; and
the particle material being in contact with a contact material selected from at least one of:
a seed material,
a co-deposited dielectric material, and
at least one patterning material,
wherein the seed material is deposited as at least one seed in a templating layer on the underlying layer and adapted to facilitate coalescence of the particle material therearound to form the at least one particle structure,
wherein the co-deposited dielectric material is co-deposited with the particle material and adapted to facilitate the formation of the particle material and the co-deposited dielectric material to form the at least one particle structure.
2 . The device of claim 1 , wherein the at least one particle structure is disposed in a discontinuous layer on the underlying layer.
3 . The device of claim 2 , wherein the at least one particle structures in at least a central part of the discontinuous layer have a common characteristic selected from at least one of: a size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposited density, dispersity, material, degree of aggregation, and other property, thereof.
4 . The device of claim 2 , wherein the discontinuous layer is disposed on a patterning coating comprising the at least one patterning material.
5 . The device of claim 4 , wherein the patterning coating is supplemented with a seed material that acts as a nucleation site for the particle material.
6 . The device of claim 1 , wherein the particle material comprises at least one of: silver, ytterbium, magnesium, potassium, sodium, lithium, barium, cesium, gold, copper, aluminum, zinc, cadmium, tin, yttrium, an alloy of any combination of any of these, and any combination of any of these.
7 . The device of claim 1 , wherein the underlying layer is selected from at least one of: an electron transport layer, an electron injection layer, a metal, an alloy, a metal oxide, and any combination of any of these.
8 . The device of claim 1 , further comprising at least one overlying layer deposited over the at least one particle structure and the underlying layer.
9 . The device of claim 1 , wherein the at least one particle structure is disposed in a first portion of a lateral aspect of the device.
10 . The device of claim 9 , wherein the first portion corresponds to at least part of a signal transmissive region.
11 . The device of claim 10 , wherein the device is adapted to accept at least one EM signal through the signal transmissive region, for exchange with at least one under-display component.
12 . The device of claim 11 , wherein the at least one under-display component comprises at least one of: a receiver adapted to receive; and a transmitter adapted to emit, the at least one EM signal passing through the signal transmissive region at a non-zero angle to the underlying layer.
13 . The device of claim 11 , wherein the device forms a display panel of a user device enclosing the under-display component therewith.
14 . The device of claim 9 , wherein a second portion of a lateral aspect of the device is substantially devoid of the at least one particle structure.
15 . The device of claim 14 , wherein the device is an opto-electronic device and the second portion corresponds to at least one emissive region thereof for emitting the at least one EM signal passing through the signal transmissive region at a non-zero angle to the underlying layer.
16 . The device of claim 15 , further comprising at least one semiconducting layer disposed on a layer thereof, wherein:
each emissive region comprises a first electrode and a second electrode;
the first electrode is disposed between the substrate and the at least one semiconducting layer, and
the at least one semiconducting layer is disposed between the first electrode and the second electrode.
17 . The device of claim 9 , wherein the device is an opto-electronic device and the first portion corresponds to at least one emissive region thereof.
18 . The device of claim 1 , wherein the seed material is selected from at least one of: ytterbium, silver, a metal, a material having a high wetting property with respect to the particle material, a nucleation promoting coating material, an organic material, a polycyclic aromatic compound, and a material comprising a non-metallic element selected from at least one of: oxygen, sulfur, nitrogen, and carbon and any combination of any of these.
19 . The device of claim 1 , wherein the co-deposited dielectric material is selected from at least one of: an organic material, a semiconductor, an organic semiconductor, and any combination of any of these.
20 . The device of claim 1 , wherein a ratio of the particle material to the co-deposited dielectric material is at least one of between about: 50:1-5:1, 30:1-5:1, and 20:1-10:1.
21 . The device of claim 1 , wherein the at least one patterning material is deposited on the underlying layer to facilitate the formation of the particle material into the at least one particle structure.
22 . The device of claim 1 , wherein the at least one particle structure is surrounded by a patterning coating comprising the at least one patterning material.
23 . The device of claim 22 , wherein the at least one particle structure is disposed on an interface between the underlying layer and the patterning coating.
24 . The device of claim 1 , wherein the at least one patterning material has a surface energy that is no more than at least one of about: 24 dynes/cm, 22 dynes/cm, 20 dynes/cm, 18 dynes/cm, 16 dynes/cm, 15 dynes/cm, 13 dynes/cm, 12 dynes/cm, and 11 dynes/cm.
25 . The device of claim 1 , wherein the at least one patterning material has a surface energy that is at least about: 6 dynes/cm, 7 dynes/cm, and 8 dynes/cm.
26 . The device of claim 1 , wherein the at least one patterning material has a refractive index for electromagnetic radiation at a wavelength of 550 nm that is no more than at least one of about: 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3.
27 . The device of claim 1 wherein the at least one patterning material has an extinction coefficient that is no more than about 0.01 for electromagnetic radiation at a wavelength that is at least one of at least about: 600 nm, 500 nm, 460 nm, 420 nm, and 410 nm.
28 . The device of claim 1 , wherein the at least one patterning material has an extinction coefficient that is at least one of about: 0.05, 0.1, 0.2, and 0.5 for electromagnetic radiation at a wavelength shorter than at least one of about: 400 nm, 390 nm, 380 nm, and 370 nm.
29 . The device of claim 1 , wherein the at least one patterning material has a glass transition temperature that is no more than at least one of about: 300° C., 150° C., 130° C., 30° C., 0° C., −30° C., and −50° C.
30 . The device of claim 1 , wherein the at least one patterning material has a sublimation temperature of at least one of between about: 100-320° C., 120-300° C., 140-280° C., and 150-250° C.
31 . The device of claim 1 , wherein the patterning material comprises at least one of a fluorine atom and a silicon atom.
32 . The device of claim 1 , wherein the patterning material comprises fluorine and carbon.
33 . The device of claim 32 , wherein an atomic ratio of a quotient of fluorine by carbon is at least one of about: 1, 1.5, and 2.
34 . The device of claim 1 , wherein the patterning material comprises an oligomer.
35 . The device of claim 1 , wherein the patterning material comprises a compound having a molecular structure containing a backbone and at least one functional group bonded thereto.
36 . The device of claim 35 , wherein the compound comprises at least one of: a siloxane group, a silsesquioxane group, an aryl group, a heteroaryl group, a fluoroalkyl group, a hydrocarbon group, a phosphazene group, a fluoropolymer, and a metal complex.
37 . The device of claim 1 , wherein the at least one patterning material comprises a first patterning material having a first initial sticking probability and a second patterning material having a second initial sticking probability that exceeds the first initial sticking probability.
38 . The device of claim 37 , wherein the second patterning material comprises at least one of: a nucleation promoting coating material, an electron transport layer material, Liq, lithium fluoride, an organic material, a polyaromatic compound, a material comprising a non-metallic element selected from at least one of oxygen, sulfur, nitrogen, and carbon and any combination of any of these.
39 . The device of claim 37 , wherein the first patterning material is a nucleation inhibiting coating material.
40 . The device of claim 1 , wherein the at least one particle imparts an optical response to electromagnetic radiation incident thereon, selected from a change in an attribute of the device that is at least one of: absorption, scattering, resonance, crystallization, refractive index, and extinction coefficient, of the radiation.
41 . The device of claim 40 , wherein the change in absorption is selected from an increase, a decrease, a peak intensity, and a shift of a wavelength thereof.
42 . The device of claim 40 , wherein the optical response affects a wavelength range of the radiation selected from at least one of: a visible spectrum, an infrared (IR) spectrum, a near IR (NIR) spectrum, an ultraviolet (UV) spectrum, a UVA spectrum, a UVB spectrum, a sub-range thereof, and any combination of any of these.
43 . The device of claim 40 , wherein the optical response is affected by a characteristic of the at least one particle selected from at least one of: a characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersity, material, degree of aggregation, and other property, of the at least one particle structure.
44 . The device of claim 43 , wherein the at least one particle structure has a characteristic diameter that is at least one of between about: 1-200 nm, 1-160 nm, 1-100 nm, 1-50 nm, and 1-30 nm.
45 . The device of claim 43 , wherein the at least one particle structure comprises at least one first particle structure having a first range of characteristic size and at least one second particle structure having a second range of characteristic size.
46 . The device of claim 45 , wherein the first range is selected from at least one of between about: 1-49 nm, 10-40 nm, 5-30 nm, 10-30 nm, 15-35 nm, 20-35 nm, and 25-35 nm and the second range is selected from at least one of: at least 50 nm, and at least one of between about: 50-250 nm, 50-200 nm, 60-150 nm, 60-100 nm, and 60-90 nm.
47 . The device of claim 40 , wherein the optical response is affected by a layer characteristic of a layer proximate to the at least one particle structure.
48 . The device of claim 47 , wherein the layer characteristic comprises at least one of: a material, a layer thickness, a refractive index, a deposition environment selected from at least one of: a temperature, pressure, duration, deposition rate, and a process thereof, and any combination of any of these.
49 . A method for controllably selecting formation of at least one particle structure on an underlying layer during manufacture of a semiconductor device having a plurality of layers, comprising actions of:
depositing at least one layer, including the underlying layer; and
exposing an exposed layer surface of the underlying layer to a flux of a particle material such that the particle material comes into contact with a contact material selected from at least one of:
a seed material,
a co-deposited dielectric material, and
at least one patterning material;
wherein the particle material coalesces to dispose the at least one particle structure on the underlying layer,
wherein the action of exposing is preceded by an action of limiting the formation of the at least one particle structure to a first portion of a lateral aspect of the device,
wherein the action of limiting comprises an action of seeding the seed material in a templating layer on the underlying layer in the first portion.
50 . The method of claim 49 , wherein the action of limiting comprises an action of applying the at least one patterning material in a patterning coating on the underlying layer in the first portion.
51 . The method of claim 49 , wherein the action of exposing comprises co-depositing the particle material with the co-deposited dielectric material.