Level shifter for integrated circuit
View Patent ↗An improved level shifter for use in integrated circuits is disclosed. The level shifter is able to achieve a switching time below 1 ns while still using the core power supply voltages, VDDL and VDDH, used in the prior art. The improved level shifter comprises a coupling stage and a level-switching stage.
1. A level shifter for receiving an input of a first voltage domain and generating an output of a second voltage domain, wherein a “0” in the first voltage domain is a first voltage and a “1” in the first voltage domain is a second voltage and a “0” in the second voltage domain is the first voltage and a “1” in the second voltage domain is a third voltage different than the second voltage, the level shifter comprising:
a first power source providing the third voltage;
a first PMOS transistor comprising a first terminal coupled to the first power source, a gate, and a second terminal;
a second PMOS transistor comprising a first terminal coupled to the first power source, a gate coupled to the second terminal of the first PMOS circuit, and a second terminal coupled to the gate of the first PMOS transistor and to an output node for providing the output;
a first NMOS transistor comprising a first terminal coupled to the second terminal of the first PMOS circuit, a gate configured to receive a first signal; and a second terminal configured to receive a complement of the input;
a second NMOS transistor comprising a first terminal coupled to the second terminal of the first PMOS circuit, a gate configured to receive the input, and a second terminal coupled to the first voltage;
a third NMOS circuit comprising a first terminal coupled to the output node, a gate configured to receive the complement of the input, and a second terminal coupled to the first voltage; and
a fourth NMOS circuit comprising a first terminal coupled to the output node, a gate coupled to receive a second signal, and a second terminal configured to receive the input;
wherein the first signal is floating or is twice the second voltage when the input is at the second voltage and is the second voltage when the input is at the first voltage; and
wherein the second signal is floating or is twice the second voltage when the input is at the first voltage and is the second voltage when the input is at the second voltage.
2. The level shifter of claim 1 , further comprising a second power source providing the second voltage.
3. The level shifter of claim 2 , wherein the first signal is generated by a first circuit comprising:
a third PMOS transistor comprising a first terminal coupled to the second power source, a gate, and a second terminal;
a fourth PMOS transistor comprising a first terminal coupled to the second terminal of the third PMOS transistor, a gate, and a second terminal;
a fifth PMOS transistor comprising a first terminal coupled to the second terminal of the fourth PMOS transistor, a gate configured to receive the complement of the input, and a second terminal coupled to the gate of the fourth PMOS transistor;
a fifth NMOS transistor comprising a first terminal coupled to the second terminal of the fifth PMOS transistor, a gate configured to receive the complement of the input; and a second terminal coupled to the first voltage; and
a first capacitor comprising a first terminal coupled to the gate of the third PMOS transistor and a second terminal coupled to the second terminal of the fourth PMOS transistor.
4. The level shifter of claim 3 , wherein the second signal is generated by a second circuit comprising:
a sixth PMOS transistor comprising a first terminal coupled to the second power source, a gate, and a second terminal;
a seventh PMOS transistor comprising a first terminal coupled to the second terminal of the sixth PMOS transistor, a gate, and a second terminal;
an eighth PMOS transistor comprising a first terminal coupled to the second terminal of the seventh PMOS transistor, a gate configured to receive the input, and a second terminal coupled to the gate of the seventh PMOS transistor;
a sixth NMOS transistor comprising a first terminal coupled to the second terminal of the eighth PMOS transistor, a gate configured to receive the input, and a second terminal coupled to the first voltage; and
a capacitor comprising a first terminal coupled to the gate of the sixth PMOS transistor and a second terminal coupled to the second terminal of the seventh PMOS transistor.
5. The level shifter of claim 4 , wherein the first voltage is ground.
6. The level shifter of claim 5 , wherein the second voltage is 1V.
7. The level shifter of claim 6 , wherein the third voltage is 2.5V.
8. The level shifter of claim 3 , wherein the first voltage is ground.
9. The level shifter of claim 8 , wherein the second voltage is 1V.
10. The level shifter of claim 9 , wherein the third voltage is 2.5V.
11. The level shifter of claim 2 , wherein the first voltage is ground.
12. The level shifter of claim 11 , wherein the second voltage is 1V.
13. The level shifter of claim 12 , wherein the third voltage is 2.5V.
14. The level shifter of claim 1 , wherein the first voltage is ground.
15. The level shifter of claim 14 , wherein the second voltage is 1V.
16. The level shifter of claim 15 , wherein the third voltage is 2.5V.
17. A method of shifting from a first voltage domain to a second voltage domain, the method comprising:
receiving an input of a first voltage domain, wherein a “0” in the first voltage domain is a first voltage and a “1” in the first voltage domain is a second voltage;
generating a switching voltage equal to twice the second voltage;
generating an output of a second voltage domain using the switching voltage, wherein a “0” in the second voltage domain is the first voltage and is generated when the input is a “0” and a “1” in the second voltage domain is a third voltage and is generated when the input is a “1”.
18. The method of claim 17 , wherein the first voltage is ground.
19. The method of claim 18 , wherein the second voltage is 1V.
20. The method of claim 19 , wherein the third voltage is 2.5V.