Structures and methods for low temperature bonding using nanoparticles
A method of making an assembly can include juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate. One of: the top surface of the first conductive element can be recessed below the first surface, or the top surface of the second conductive element can be recessed below the major surface. Electrically conductive nanoparticles can be disposed between the top surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers. The method can also include elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles can cause metallurgical joints to form between the juxtaposed first and second conductive elements.
1. An assembly, comprising:
a first component including a substrate having a first surface and a plurality of first conductive elements exposed at the first surface, each first conductive element having a top surface generally facing in a first direction, the top surface of each first conductive element exposed in a recess extending below the first surface; and
a second component including a substrate having a major surface and a plurality of second conductive elements exposed at the major surface, each second conductive element having a top surface generally facing in a second direction opposite the first direction, the top surface of each second conductive element exposed in a recess extending below the major surface,
the first conductive elements being joined with the second conductive elements, such that the top surfaces of the first conductive elements at least partially confront the top surfaces of the second conductive elements,
each first conductive element being electrically interconnected with a corresponding one of the second conductive elements by a bond region including impurities that show structural evidence of the use of conductive nanoparticles having long dimensions smaller than 100 nanometers in a joining process, each bond region penetrating at least partially into the first conductive element and the second conductive element.
2. The assembly of claim 1 , wherein each bond region includes impurities that show structural evidence of first, second, and third layers of electrically conductive nanoparticles, the second layer of conductive nanoparticles disposed between the first and third layers of conductive nanoparticles and comprising at least one material different than at least one material comprising the first layer of conductive nanoparticles and different than at least one material comprising the third layer of conductive nanoparticles.
3. The assembly of claim 2 , wherein each bond region includes impurities that show structural evidence of first, second, third, fourth, and fifth layers of electrically conductive nanoparticles, the first and fifth layers of conductive nanoparticles penetrating at least partially into the first post and the second conductive element, respectively, the second and fourth layers of conductive nanoparticles each comprising at least one material different than at least one material comprising the first and fifth layers of conductive nanoparticles, respectively, each of the second and fourth layers of conductive nanoparticles including a barrier metal configured to prevent metal of the third layer of conductive nanoparticles from penetrating into the first and fifth layers of conductive nanoparticles.
4. The assembly of claim 1 , wherein each bond region includes solder extending into microvoids located between at least some of the conductive nanoparticles, each microvoid having a maximum width below 0.5 microns.
5. The assembly of claim 1 , wherein the first surface of the substrate of the first component and the major surface of the substrate of the second component each comprise a dielectric material, and the dielectric material of the first surface is directly bonded with the dielectric material of the major surface.
6. An assembly, comprising:
a first component including a substrate having a first surface and a plurality of first conductive elements exposed at the first surface, each first conductive element having a top surface generally facing in a first direction, the top surface of each first conductive element exposed in a recess extending below the first surface; and
a second component including a substrate having a major surface and a plurality of second conductive elements exposed at the major surface, each second conductive element having a top surface generally facing in a second direction opposite the first direction, the top surface of each second conductive element exposed in a recess extending below the major surface,
the first conductive elements being joined with the second conductive elements, such that the top surfaces of the first conductive elements at least partially confront the top surfaces of the second conductive elements,
each first conductive element being electrically interconnected with a corresponding one of the second conductive elements by a bond region including impurities that show structural evidence of the use of conductive nanoparticles having long dimensions smaller than 100 nanometers in a joining process, each bond region penetrating at least partially into the first conductive element and the second conductive element,
wherein at least one of the substrates of the first component and the second component has a metal element extending in a respective plane in first and second transverse directions within the respective substrate, the metal element configured to provide electromagnetic shielding to reduce signal noise of signals traveling between the first and second conductive elements.
7. The assembly of claim 6 , wherein both of the substrates of the first component and the second component has the metal element extending in the respective plane in the first and second transverse directions within the respective substrate, the metal element of the first component comprises traces extending in the first direction, and the metal element of the second component comprises traces extending in the second direction.
8. The assembly of claim 6 , wherein each bond region includes impurities that show structural evidence of first, second, and third layers of electrically conductive nanoparticles, the second layer of conductive nanoparticles disposed between the first and third layers of conductive nanoparticles and comprising at least one material different than at least one material comprising the first layer of conductive nanoparticles and different than at least one material comprising the third layer of conductive nanoparticles.
9. The assembly of claim 8 , wherein each bond region includes impurities that show structural evidence of first, second, third, fourth, and fifth layers of electrically conductive nanoparticles, the first and fifth layers of conductive nanoparticles penetrating at least partially into the first post and the second conductive element, respectively, the second and fourth layers of conductive nanoparticles each comprising at least one material different than at least one material comprising the first and fifth layers of conductive nanoparticles, respectively, each of the second and fourth layers of conductive nanoparticles including a barrier metal configured to prevent metal of the third layer of conductive nanoparticles from penetrating into the first and fifth layers of conductive nanoparticles.
10. The assembly of claim 6 , wherein each bond region includes solder extending into microvoids located between at least some of the conductive nanoparticles, each microvoid having a maximum width below 0.5 microns.
11. The assembly of claim 6 , wherein the first surface of the substrate of the first component and the major surface of the substrate of the second component each comprise a dielectric material, and the dielectric material of the first surface is directly bonded with the dielectric material of the major surface.