Thin film transistor, method for manufacturing the same, and semiconductor device
In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
1. A semiconductor device comprising:
a first transistor;
a second transistor;
a capacitor; and
a light-emitting element,
wherein each of the first transistor and the second transistor comprises:
a gate electrode comprising titanium and molybdenum;
a first insulating layer;
an oxide semiconductor layer overlapping with the gate electrode with the first insulating layer interposed therebetween;
a source electrode electrically connected to the oxide semiconductor layer, the source electrode comprising titanium and molybdenum; and
a drain electrode electrically connected to the oxide semiconductor layer, the drain electrode comprising titanium and molybdenum,
wherein one electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the first transistor and the gate electrode of the second transistor,
wherein the light-emitting element is electrically connected to one of the source electrode and the drain electrode of the second transistor, and
wherein the first insulating layer includes a contact hole in a region where the first transistor, the second transistor, and the capacitor are not overlapped with each other.
2. A semiconductor device comprising:
a first transistor;
a second transistor;
a capacitor; and
a light-emitting element,
wherein each of the first transistor and the second transistor comprises:
a gate electrode comprising titanium and molybdenum;
a first insulating layer;
an oxide semiconductor layer overlapping with the gate electrode with the first insulating layer interposed therebetween;
a source electrode electrically connected to the oxide semiconductor layer, the source electrode comprising titanium and molybdenum; and
a drain electrode electrically connected to the oxide semiconductor layer, the drain electrode comprising titanium and molybdenum,
wherein one electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the first transistor and the gate electrode of the second transistor,
wherein the light-emitting element is electrically connected to one of the source electrode and the drain electrode of the second transistor,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc, and
wherein the first insulating layer includes a contact hole in a region where the first transistor, the second transistor, and the capacitor are not overlapped with each other.
3. The semiconductor device according to claim 1 , wherein the gate electrode of the second transistor is electrically connected to the one of the source electrode and the drain electrode of the first transistor through the contact hole.
4. The semiconductor device according to claim 1 , wherein the first insulating layer is between the one electrode of the capacitor and the other of the source electrode and the drain electrode of the second transistor.
5. The semiconductor device according to claim 1 , further comprising an interlayer insulating layer over the first transistor, the capacitor, and the second transistor.
6. The semiconductor device according to claim 1 , wherein the one electrode of the capacitor is overlapped with a pixel electrode.
7. The semiconductor device according to claim 2 , wherein the gate electrode of the second transistor is electrically connected to the one of the source electrode and the drain electrode of the first transistor through the contact hole.
8. The semiconductor device according to claim 2 , wherein the first insulating layer is between the one electrode of the capacitor and the other of the source electrode and the drain electrode of the second transistor.
9. The semiconductor device according to claim 2 , further comprising an interlayer insulating layer over the first transistor, the capacitor, and the second transistor.
10. The semiconductor device according to claim 2 , wherein the one electrode of the capacitor is overlapped with a pixel electrode.