Granted Patent B2

US 12,396,216 · App. 18/792,782 · Granted Aug 19, 2025

Inventors: Shunpei Yamazaki (Setagaya, JP); Motoki Nakashima (Atsugi, JP); Tatsuya Honda (Nigata, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H10D30/6755C01G19/006H10D30/6757H10D62/40H10D62/405H10D62/80C01P2002/72

Abstract

Claims (20)

1. A semiconductor device comprising:

an oxide semiconductor layer comprising a stack of a first film and a second film;

an insulating layer over the oxide semiconductor layer; and

a gate electrode over the insulating layer,

wherein the second film is positioned over the first film,

wherein one of the first film and the second film comprises an In—Sn—Ga—Zn—O-based oxide semiconductor film,

wherein each of the first film and the second film comprises a crystal,

wherein the second film comprises c-axis aligned crystals, and

wherein the c-axis aligned crystals in the second film have different a-axis directions and b-axis directions from each other.

2. The semiconductor device according to claim 1 , wherein the first film and the second film have a different composition from each other.

3. The semiconductor device according to claim 1 ,

wherein the insulating layer is in contact with the oxide semiconductor layer, and

wherein the insulating layer comprises silicon and oxygen.

4. The semiconductor device according to claim 1 ,

wherein the insulating layer is in contact with the second film, and

wherein the insulating layer comprises silicon and oxygen.

5. The semiconductor device according to claim 1 , further comprising:

a source electrode and a drain electrode each in contact with the oxide semiconductor layer,

wherein one of the source electrode and the drain electrode is electrically connected to a display element.

6. The semiconductor device according to claim 5 , wherein the display element is a liquid crystal element.

Priority Claims (2)

Continuity (7)

References Cited (227)