Chemical mechanical planarization pads with constant groove volume

1. A chemical mechanical polishing pad, comprising:

a surface portion comprising a first material, the surface portion comprising a plurality of grooves, wherein:

a first portion of the plurality of grooves are exposed grooves located at a surface of the chemical mechanical polishing pad; and

a second portion of the plurality of grooves are buried grooves embedded below the surface of the chemical mechanical polishing pad; wherein the exposed grooves and the buried grooves are offset vertically, and the buried grooves are located directly below the exposed grooves, such that the plurality of grooves at the surface remains constant, and that during use of the chemical mechanical polishing pad, when a top layer of the surface portion of the polishing pad is removed through conditioning and general wear, one or more of the buried grooves are exposed at the surface;

wherein the polishing pad has a volume of exposed grooves and an initial volume (V 0 ) representing the volume of exposed grooves prior to use, and the volume of exposed grooves is maintained with less than an 80% variation from V 0 during use.

2. The chemical mechanical polishing pad of claim 1 , wherein, the volume of the exposed grooves is maintained less than a 25% variation from V 0 .

3. The chemical mechanical polishing pad of claim 1 , wherein a first subset of the plurality of grooves have a first width and a second subset of the plurality of grooves has a second width that is greater than the first width.

4. The chemical mechanical polishing pad of claim 1 , wherein the chemical mechanical polishing pad is prepared using a vat-based additive manufacturing process.

5. The chemical mechanical polishing pad of claim 1 , comprising at least three layers of buried grooves.

6. A method of chemical mechanical polishing a wafer, the method comprising:

providing a chemical mechanical polishing pad comprising:

a surface portion comprising a first material, the surface portion comprising a plurality of grooves, wherein:

a first portion of the plurality of grooves are exposed grooves located at a surface of the chemical mechanical polishing pad; and

a second portion of the plurality of grooves are buried grooves embedded below the surface of the chemical mechanical polishing pad; wherein the exposed grooves and the buried grooves are offset vertically, and the buried grooves are located directly below the exposed grooves, such that the plurality of grooves at the surface remains constant, and that during use of the chemical mechanical polishing pad, when a top layer of the surface portion of the polishing pad is removed through conditioning and general wear, one or more of the buried grooves are exposed at the surface; wherein the polishing pad has a volume of exposed grooves and an initial volume (V 0 ) representing the volume of exposed grooves prior to use, and the volume of exposed grooves is maintained with less than an 80% variation from V 0 during use;

rotating the chemical mechanical polishing pad; and

contacting the wafer to the rotating chemical mechanical polishing pad.

7. The method of claim 6 , wherein, the volume of the exposed grooves is maintained with less than a 25% variation from V 0 during use.

8. The method of claim 6 , wherein a first subset of the plurality of grooves have a first width and a second subset of the plurality of grooves has a second width that is greater than the first width.

9. The method of claim 6 , wherein the chemical mechanical polishing pad is prepared using a vat-based additive manufacturing process.

10. The method of claim 6 , wherein the chemical mechanical polishing pad comprises at least three layers of buried grooves.