Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls, and methods of fabricating self-aligned gate endcap (SAGE) architectures with vertical sidewalls, are described. In an example, an integrated circuit structure includes a semiconductor fin having sidewalls along a length of the semiconductor fin, each sidewall tapering outwardly from a top of the semiconductor fin toward a bottom of the semiconductor fin. A gate endcap isolation structure is spaced apart from the semiconductor fin and has a length parallel with the length of the semiconductor fin. The gate endcap isolation structure has a substantially vertical sidewall laterally facing one of the outwardly tapering sidewalls of the semiconductor fin.
1. An integrated circuit structure, comprising:
a semiconductor fin having first and second sidewalls along a length of the semiconductor fin, the first and second sidewalls tapering outwardly from a distal end of the semiconductor fin to a substrate from which the semiconductor fin extends;
a trench isolation structure laterally adjacent to a portion of the semiconductor fin that is proximate the substrate;
a first gate endcap isolation structure having a length parallel with the length of the semiconductor fin, the first gate endcap isolation structure extending into the trench isolation structure, the first gate endcap isolation structure having a sidewall laterally facing the first sidewall of the semiconductor fin with the trench isolation structure therebetween, the first gate endcap isolation structure having a first width, wherein the sidewall of the first gate endcap isolation structure is substantially vertical;
a second gate endcap isolation structure having a length parallel with the length of the semiconductor fin, the second gate endcap isolation structure extending into the trench isolation structure, the second gate endcap isolation structure having a sidewall laterally facing the second sidewall of the semiconductor fin with the trench isolation structure therebetween, the second gate endcap isolation structure having a second width greater than the first width; and
a gate electrode in contact with the first and second gate endcap isolation structures, the second gate endcap isolation structure positioned at a lateral side of the gate electrode.
2. The integrated circuit structure of claim 1 , wherein the first sidewall of the semiconductor fin tapers at an angle greater than 5 degrees from vertical, and the sidewall of the first gate endcap isolation structure tapers inwardly at an angle in a range of zero degrees to less than 5 degrees from vertical.
3. The integrated circuit structure of claim 1 , wherein the first gate endcap isolation structure has first and second ends, the first end of the first gate endcap isolation structure extending into the trench isolation structure and the second end of the first gate endcap isolation structure extending away from the trench isolation structure, the second end of the first gate endcap isolation structure extending farther away from the trench isolation structure than the distal end of the semiconductor fin extends away from the trench isolation structure.
4. The integrated circuit structure of claim 1 , wherein the first gate endcap isolation structure is aligned with the distal end of the semiconductor fin.
5. The integrated circuit structure of claim 1 , wherein the first gate endcap isolation structure includes a dielectric portion and a dielectric cap on the dielectric portion.
6. The integrated circuit structure of claim 1 , wherein the first gate endcap isolation structure includes a vertical seam centered within the first gate endcap isolation structure.
7. The integrated circuit structure of claim 1 , wherein the second gate endcap isolation structure is laterally aligned with a second semiconductor fin extending from the substrate, the second semiconductor fin being a cut fin.
8. An integrated circuit structure, comprising:
a first semiconductor fin having sidewalls along a length of the first semiconductor fin, each of the sidewalls of the first semiconductor fin tapering outwardly from a distal end of the first semiconductor fin toward a substrate from which the first semiconductor fin extends;
a second semiconductor fin having sidewalls along a length of the second semiconductor fin, each of the sidewalls of the second semiconductor fin tapering outwardly from a distal end of the second semiconductor fin toward the substrate;
a trench isolation structure laterally between the first semiconductor fin and the second semiconductor fin, the trench isolation structure surrounding an end of a cut fin portion;
a first gate endcap isolation structure between the first semiconductor fin and the second semiconductor fin, the first gate endcap isolation structure having a length parallel with the lengths of the first and second semiconductor fins, the first gate endcap isolation structure having a first substantially vertical sidewall laterally facing one of the outwardly tapering sidewalls of the first semiconductor fin, and a second substantially vertical sidewall laterally facing one of the outwardly tapering sidewalls of the second semiconductor fin, and wherein the first gate endcap isolation structure is recessed into the trench isolation structure, the first gate endcap isolation structure having a first width;
a second gate endcap isolation structure, the second gate endcap isolation structure having a length parallel with the lengths of the first and second semiconductor fins, the second gate endcap isolation structure having a second width greater than the first width; and
at least one gate electrode covering the distal end of the first semiconductor fin and the distal end of the second semiconductor fin, the at least one gate electrode in contact with the first and second gate endcap isolation structures, wherein the second gate endcap isolation structure is positioned at a lateral side of the at least one gate electrode.
9. The integrated circuit structure of claim 8 , wherein the first gate endcap isolation structure includes first and second ends, the first end of the first gate endcap isolation structure extending into the trench isolation structure and the second end of the first gate endcap isolation structure extending away from the trench isolation structure, the second end of the first gate endcap isolation structure extending farther away from the trench isolation structure than the distal end of the second semiconductor fin.
10. The integrated circuit structure of claim 8 , wherein the first gate endcap isolation structure has an end approximately co-planar with the distal end of the first semiconductor fin and approximately co-planar with the distal end of the second semiconductor fin.
11. The integrated circuit structure of claim 8 , wherein at least one of the outwardly tapering sidewalls of the first semiconductor fin tapers at an angle greater than 5 degrees from vertical, the first substantially vertical sidewall of the gate endcap isolation structure tapers inwardly at an angle in a range of zero degrees to less than 5 degrees from vertical, at least one of the outwardly tapering sidewalls of the second semiconductor fin tapers at an angle greater than 5 degrees from vertical, and the second substantially vertical sidewall of the gate endcap isolation structure tapers inwardly at an angle in a range of zero degrees to less than 5 degrees from vertical.
12. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, the integrated circuit structure including:
a semiconductor fin having sidewalls along a length of the semiconductor fin, the sidewalls tapering outwardly from a distal end of the semiconductor fin toward a substrate from which the semiconductor fin extends;
a trench isolation structure laterally adjacent to at least a portion of the semiconductor fin;
a first gate endcap isolation structure having a length parallel with the length of the semiconductor fin, the first gate endcap isolation structure having a substantially vertical sidewall laterally facing one of the outwardly tapering sidewalls of the semiconductor fin with the trench isolation structure therebetween, the first gate endcap isolation structure extending into the trench isolation structure, the first gate endcap isolation structure having a first width;
a second gate endcap isolation structure having a length parallel with the length of the semiconductor fin, the second gate endcap isolation structure having a substantially vertical sidewall laterally facing one of the outwardly tapering sidewalls of the semiconductor fin with the trench isolation structure therebetween, the second gate endcap isolation structure extending into the trench isolation structure, the second gate endcap isolation structure having a second width greater than the first width; and
a gate electrode in direct physical contact with the first and second gate endcap isolation structures, the second gate endcap isolation structure at a lateral side of the gate electrode.
13. The computing device of claim 12 , further including:
a memory coupled to the board.
14. The computing device of claim 12 , further including:
a communication chip coupled to the board.
15. The computing device of claim 12 , further including:
a camera coupled to the board.
16. The computing device of claim 12 , further including:
a battery coupled to the board.
17. The computing device of claim 12 , further including:
an antenna coupled to the board.
18. The computing device of claim 12 , wherein the component is a packaged integrated circuit die.
19. The computing device of claim 12 , wherein the component includes at least one of a processor, a communications chip, or a digital signal processor.
20. The computing device of claim 12 , wherein the computing device includes at least one of a mobile phone, a laptop, a desk top computer, a server, or a set-top box.