Integrated circuit (IC) device including a force mitigation system for reducing under-pad damage caused by wire bond
An integrated circuit chip (die) may include a force mitigation system for reducing or mitigating under-pad stresses typically caused by wire bonding. The IC die may include wire bond pads and a force mitigation system formed below each wire bond pad. The force mitigation system may include a “shock plate” (e.g., metal region), a sealing layer located above the shock plate, and a force mitigation layer including an array of sealed voids between the metal region and the sealing layer. The sealed voids in the force mitigation layer may be defined by forming openings in an oxide dielectric layer and forming a non-conformal sealing layer over the openings to define an array of sealed voids. The force mitigation system may mitigate stresses caused by a wire bond on each wire bond pad, which may reduce or eliminate wire-bond-related damage to semiconductor devices located in the under-pad regions of the die.
1. A method of forming a silicon die, the method comprising:
forming a metal region above a substrate;
forming a non-metal layer over the metal region;
forming a plurality of openings in the non-metal layer aligned directly over the metal region;
forming a non-metal sealing layer over the plurality of openings in the non-metal layer, wherein the non-metal sealing layer seals a top side of the openings to define a plurality of sealed voids aligned directly over the metal region; and
forming a wire bond pad over the non-metal sealing layer.
2. The method of claim 1 , wherein semiconductor devices are formed in a region of the die below the metal region.
3. The method of claim 2 , wherein the semiconductor devices include at least one non-electrostatic-sensitive device (non-ESD).
4. The method of claim 1 , comprising:
forming a dielectric region over the substrate; and
forming the metal region on or in the dielectric region over the substrate.
5. The method of claim 1 , wherein:
the non-metal layer over the metal region comprise an oxide dielectric layer; and
forming the plurality of openings in the non-metal layer comprises forming a plurality of vias in the oxide dielectric layer.
6. The method of claim 1 , wherein forming the non-metal sealing layer over the plurality of openings in the non-metal layer comprises forming a non-conformal inter-metal dielectric (IMD) layer over the plurality of openings.
7. The method of claim 1 , further comprising forming a passivation layer over the sealed voids.
8. The method of claim 1 , further comprising bonding a wire to the wire bond pad.
9. The method of claim 1 , wherein forming the plurality of openings in the non-metal layer comprises forming a two-dimensional array of openings in the non-metal layer.
10. The method of claim 1 , further comprising forming at least one metal line in or above the non-metal sealing layer;
wherein the wire bond pad is conductively coupled to the at least one metal line in or above the non-metal sealing layer.
11. The method of claim 1 , further comprising creating a partial vacuum in the sealed voids.
12. The method of claim 1 , comprising forming the sealed voids such that each sealed void has a lateral width that gradually reduces in a tapered manner toward a top end of the sealed void.
13. A method of forming a semiconductor package, the method comprising:
forming one or more semiconductor devices in or above a substrate;
forming a metal shock plate region above the one or more semiconductor devices;
forming a force mitigation structure above the metal shock plate region, the force mitigation structure including a plurality of sealed voids defined in a non-metal region and aligned directly over the metal shock plate, the plurality of sealed voids being sealed by a non-metal sealing layer formed on a top side of the sealed voids; and
forming a bond pad above the force mitigation layer.
14. The method of claim 13 , wherein the non-metal region comprises an oxide dielectric layer.
15. The method of claim 13 , wherein the non-metal sealing layer formed on the top side of the sealed voids comprises a non-conformal inter-metal dielectric (IMD) layer.
16. A method of forming an electronic device, the method comprising:
forming a silicon die by a process including:
forming a metal region above a substrate;
forming a non-metal layer over the metal region;
forming a plurality of openings in the non-metal layer and aligned over the metal shock plate;
forming a sealing layer over the plurality of openings in the non-metal region to define a plurality of sealed voids aligned directly over the metal region, wherein the plurality of sealed voids define a force mitigation structure; and
forming a wire bond pad over the sealing layer; and
performing a bond process to form a conductive connection to the wire bond pad, wherein the bond process imparts a force on the force mitigation structure.
17. The method of claim 16 , wherein performing the bond process comprises performing a solder ball bonding process that imparts a force on the force mitigation structure.
18. The method of claim 16 , wherein performing the bond process comprises performing a wire bond process to connect the silicon die to an electronic component, wherein the wire bond process imparts a force on the force mitigation structure.
19. The method of claim 16 , wherein:
the non-metal region comprises an oxide dielectric layer; and
the sealing layer comprises a non-conformal inter-metal dielectric (IMD) layer.
20. The method of claim 16 , comprising forming a two-dimensional array of the sealed voids.
21. A method of forming a silicon die, the method comprising:
forming a metal region above a substrate;
forming a non-metal layer over the metal region;
forming a plurality of openings in the non-metal layer and aligned directly over the metal shock plate;
forming a sealing layer over the plurality of openings in the non-metal layer to define a plurality of sealed voids aligned directly over the metal region;
forming at least one metal line in or above the sealing layer; and
forming a wire bond pad over the sealing layer;
wherein the wire bond pad is conductively coupled to the at least one metal line formed in or above the sealing layer.
22. A method of forming a silicon die, the method comprising:
forming a metal region above a substrate;
forming a non-metal layer over the metal region;
forming a plurality of openings in the non-metal layer;
forming a non-metal sealing layer over the plurality of openings in the non-metal layer, wherein the non-metal sealing layer seals a top side of the openings to define a plurality of sealed voids over the metal region, wherein respective sealed voids have a lateral width that gradually reduces in a tapered manner toward a top end of the respective sealed void; and
forming a wire bond pad over the non-metal sealing layer.