Granted Patent B2

US 12,272,816 · App. 17/036,170 · Granted Apr 8, 2025

Inventors: Huisu Jeong (Seongnam-si, KR); Hwiyeol Park (Hwaseong-si, KR); Kyounghwan Kim (Seoul, KR); Jeongkuk Shon (Hwaseong-si, KR); Junhyeong Lee (Seoul, KR); Sungjin Lim (Suwon-si, KR); Jin S. Heo (Suwon-si, KR)

Assignee: SAMSUNG ELECTRONICS CO., LTD.

H01M4/366H01M4/043H01M4/0471H01M2004/021H01M2004/025

Abstract

Claims (194)

1. An active material structure comprising:

first active material lines arranged in a first direction;

second active material lines arranged in a second direction intersecting the first direction;

intermediate active material lines between the first active material lines and the second active material lines in a third direction intersecting the first direction and the second direction, the intermediate active material lines provided in overlapping regions of the first active material lines and the second active material lines;

first channels extending in the first active material layer and the intermediate active material layer in a first direction; and

second channels extending in the second active material layer and the intermediate active material layer in a second direction intersecting the first direction,

wherein the first active material lines and the second active material lines are electrically connected by the intermediate active material lines, and

wherein the first active material lines, the second active material lines, the intermediate active material lines, or a combination thereof comprises a cathode active material,

wherein a depth of a first channel measured in the third direction is about 50% to about 80% of a thickness of the active material structure measured in the third direction, and

wherein a depth of a second channel measured in the third direction is about 50% to about 80% of the thickness of the active material structure.

2. The active material structure of claim 1 , wherein a length of an intermediate active material line measured in the first direction is equal to a width of the intermediate active material line measured in the second direction.

3. The active material structure of claim 1 , wherein

the intermediate active material lines comprise

a first pair of intermediate active material lines adjacent to each other in the first direction, and

a second pair of intermediate active material lines adjacent to each other in the second direction; and

a distance in the first direction between the first pair of intermediate active material lines is equal to a distance in the second direction between the second pair of intermediate active material lines.

4. The active material structure of claim 1 , wherein the intermediate active material lines extend in the third direction.

5. The active material structure of claim 1 , wherein

the first active material lines extend in the second direction, and

the second active material lines extend in the first direction.

6. The active material structure of claim 1 , wherein

a second active material line has a length measured in the third direction, and

an intermediate active material line has a width measured in the third direction,

wherein the width of the intermediate active material line is greater than the length of the second active material line.

7. The active material structure of claim 6 , wherein

a first active material line has a thickness measured in the third direction,

wherein the width of the intermediate active material line is greater than the thickness of the first active material line.

8. The active material structure of claim 7 , wherein the length of the second active material line is equal to the thickness of the first active material line.

9. The active material structure of claim 1 , wherein

the second active material lines have a first sintered density,

the intermediate active material lines have a second sintered density, and

the first active material lines have a third sintered density,

wherein the first sintered density, the second sintered density, and the third sintered density are equal.

10. The active material structure of claim 1 , wherein

the second active material lines have a first sintered density,

the intermediate active material lines have a second sintered density, and

the first active material lines have a third sintered density,

wherein the second sintered density is greater than the first sintered density and the third sintered density.

11. The active material structure of claim 10 , wherein the first sintered density and the third sintered density are equal.

12. The active material structure of claim 1 , wherein

the second active material lines have a first sintered density,

the intermediate active material lines have a second sintered density, and

the first active material lines have a third sintered density,

wherein the first sintered density is less than the second sintered density and the third sintered density.

13. The active material structure of claim 12 , wherein the second sintered density and the third sintered density are equal.

14. The active material structure of claim 1 , wherein

the second active material lines comprise a first active material,

the intermediate active material lines comprise a second active material, and

the first active material lines comprise a third active material,

wherein the first active material, the second active material, and the third active material are the same.

15. The active material structure of claim 1 , wherein

the second active material lines comprise a first active material,

the intermediate active material lines comprise a second active material, and

the first active material lines comprise a third active material,

wherein at least two of the first active material, the second active material, and the third active material are different.

16. The active material structure of claim 1 , wherein

a side surface of an intermediate active material line of the intermediate active material lines comprises at least one of a (101) plane or an {hk0} plane,

wherein h and k each represent an integer greater than or equal to 1 and are the same, and

wherein the intermediate active material line comprises LiCoO 2 , Li(Ni a CO b Mn 1-a-b )O 2 , wherein 0≤a≤1, 0≤b≤1, and a+b=1, Li(Ni x Co y Al 1-x-y ) O 2 , wherein 0≤x≤1, 0≤y≤1, and x+y=1, LiMn 2 O 4 , or LiFePO 4 .

17. The active material structure of claim 16 , wherein a side surface of a second active material line of the second active material lines comprises at least one of a (101) plane or an {hk0} plane, and wherein the second active material line comprises LiCoO 2 , Li(Ni a CO b Mn 1-a-b ) O 2 , wherein 0≤a≤1, 0≤b≤1, and a+b=1, Li(Ni x Co y Al 1-x-y ) O 2 , wherein 0≤x≤1, 0≤y≤1, and x+y=1, LiMn 2 O 4 , or LiFePO 4 .

18. The active material structure of claim 17 , wherein a side surface of a first active material line of the first active material lines comprises at least one of a (101) plane or an {hk0} plane, and wherein the first active material line comprises LiCoO 2 , Li(Ni a CO b Mn 1-a-b ) O 2 , wherein 0≤a≤1, 0≤b≤1, and a+b=1, Li(Ni x Co y Al 1-x-y ) O 2 , wherein 0≤x≤1, 0≤y≤1, and x+y=1, LiMn 2 O 4 , or LiFePO 4 .

19. The active material structure of claim 18 , wherein

the first active material lines comprise first surfaces and second surfaces opposite one another,

the second active material lines comprise third surfaces and fourth surfaces opposite one another,

the third surfaces is between the second surfaces and the fourth surfaces,

the second surfaces is between the first surfaces and the third surfaces, and

the first surfaces, second surfaces, the third surfaces, and fourth surfaces comprise a (003) plane,

wherein, when analyzed by X-ray diffraction using CuKα radiation, an intensity of a peak corresponding to a (003) plane, an intensity of a peak corresponding to a (101) plane, and an intensity of a peak corresponding to a {hk0} plane satisfy the relationship

( B+C )/ A≥ 2.7,

wherein A represents the intensity of the peak corresponding to the (003) plane, B represents the intensity of the peak corresponding to the (101) plane, and C represents the intensity of the peak corresponding to of the {hk0} plane.

20. A method of fabricating the active material structure of claim 1 , the method comprising:

providing an active material film;

forming first channels in the active material film, the first channels arranged in the first direction;

forming second channels in the active material film, the second channels arranged in the second direction; and

sintering the active material film,

wherein the first channels comprise recessed regions of the active material film that are recessed to a first depth from a first surface of the active material film,

the second channels comprise recessed regions of the active material film that are recessed to a second depth from a second surface of the active material film, the second surface of the active material film being opposite the first surface of the active material film, and

a sum of the first depth and the second depth is greater than a thickness of the active material film measured in the third direction.

21. The method of claim 20 , wherein

the forming of the first channels comprises pressing the first surface of the active material film with a first stamp such that the first stamp is inserted into the active material film, and

the forming of the second channels comprises pressing the second surface of the active material film with a second stamp such that the second stamp is inserted into the active material film.

22. The method of claim 20 , wherein

the providing of the active material film comprises:

forming a preliminary second active material layer;

forming a preliminary intermediate active material layer on the preliminary second active material layer; and

forming a preliminary first active material layer on the preliminary intermediate active material layer.

23. The method of claim 22 , wherein

the first depth is equal to a sum of a thickness of the preliminary intermediate active material layer measured in the third direction and a thickness of the preliminary first active material layer measured in the third direction, and

the second depth is equal to a sum of the thickness of the preliminary intermediate active material layer and a thickness of the preliminary second active material layer measured in the third direction.

24. The method of claim 22 , wherein

the first depth is greater than a sum of a thickness of the preliminary intermediate active material layer measured in the third direction and a thickness of the preliminary first active material layer measured in the third direction, and

the second depth is greater than a sum of the thickness of the preliminary intermediate active material layer and a thickness of the preliminary second active material layer measured in the third direction.

25. The method of claim 20 , further comprising:

providing a binder in the active material film before the sintering of the active material film; and

removing the binder from the active material film during the sintering of the active material film.

26. The method of claim 20 , further comprising forming third channels in the active material film, the third channels arranged in the third direction intersecting the first direction and the second direction,

wherein the third channels comprise recessed regions of the active material film that are recessed to a third depth from the first surface of the active material film.

27. An active material structure comprising:

a first active material layer on a second active material layer;

an intermediate active material layer between the second active material layer and the first active material layer;

first channels extending in the first active material layer and the intermediate active material layer in a first direction; and

second channels extending in the second active material layer and the intermediate active material layer in a second direction intersecting the first direction,

wherein the first channels and the second channels intersect each other in the intermediate active material layer,

wherein the first active material layer, the second active material layer, the intermediate active material layer, or a combination thereof comprises a cathode active material,

wherein a depth of a first channel measured in a third direction is about 50% to about 80% of a thickness of the active material structure measured in the third direction, the third direction intersecting the first direction and the second direction, and

wherein a depth of a second channel measured in the third direction is about 50% to about 80% of the thickness of the active material structure.

28. The active material structure of claim 27 , wherein

the first active material layer comprises a first surface and a second surface opposite one another,

the second active material layer comprises a third surface and a fourth surface opposite one another,

the third surface is between the second surface and the fourth surface,

the second surface is between the first surface and the third surface,

the first channels extend from the first surface of the first active material layer to the first surface of the second active material layer, thus exposing the first surface of the second active material layer, and

the second channels extend from the second surface of the second active material layer to the second surface of the first active material layer, thus exposing the second surface of the first active material layer.

29. The active material structure of claim 28 , wherein

the first channels extend into the second active material layer, and

active material structure comprises a step between the first surface of the second active material layer exposed via the first channels and a surface of the second active material layer adjacent to the first active material layer.

30. The active material structure of claim 29 , wherein

the second channels extend into the first active material layer, and

active material structure comprises a step between the second surface of the first active material layer exposed via the second channels and a surface of the first active material layer adjacent to the second active material layer.

31. The active material structure of claim 27 , further comprising third channels extending in the first active material layer and the intermediate active material layer, the third channels extending in the third direction intersecting the first direction and the second direction,

wherein the third channels intersect the first channels and the second channels in the intermediate active material layer, and

wherein the first channels and the third channels intersect each other in the first active material layer.

32. An active material structure comprising:

first active material lines arranged in a first direction;

second active material lines arranged in a second direction intersecting the first direction;

intermediate active material lines between the first active material lines and the second active material lines in a third direction intersecting the first direction and the second direction, the intermediate active material lines provided in overlapping regions of the first active material lines and the second active material lines;

first channels between and co-extensive with adjacent first active material lines; and

second channels between and co-extensive with adjacent second active material lines,

wherein the first active material lines and the second active material lines are electrically connected by the intermediate active material lines,

wherein a depth of a first channel measured in the third direction is about 50% to about 80% of a thickness of the active material structure measured in the third direction, and

wherein a depth of a second channel measured in the third direction is about 50% to about 80% of the thickness of the active material structure.

33. An electrode structure comprising:

a current collector layer; and

an active material structure on the current collector layer,

wherein

the active material structure comprises a first portion and a second portion,

the second portion of the active material structure is between the first portion of the active material structure and the current collector layer,

the second portion of the active material structure comprises a first surface and a second surface opposite one another,

the first surface is between the first portion of the active material structure and the second surface,

the current collector layer comprises a third surface and a fourth surface opposite one another,

the third surface is between the active material structure and the fourth surface,

the active material structure comprises:

first channels extending in a first direction parallel to the first surface of the current collector layer; and

second channels intersecting the first channels and extending in a second direction parallel to the first surface of the current collector layer,

the first surface of the current collector layer is exposed via the first channels,

the first surface of the second portion of the active material structure is exposed via the second channels,

the active material structure comprises a cathode active material,

a depth of a first channel measured in a third direction is about 50% to about 80% of a thickness of the active material structure measured in the third direction, the third direction being perpendicular to the first surface of the current collector layer, and

a depth of a second channel measured in the third direction is about 50% to about 80% of the thickness of the active material structure.

34. The electrode structure of claim 33 , wherein

the second portion of the active material structure comprises second active material lines extending in the first direction,

wherein the first channels are provided between the second active material lines.

35. The electrode structure of claim 33 , wherein

the first portion of the active material structure comprises a first surface and a second surface opposite one another,

the second surface of the first portion of the active material structure is between the first surface of the first portion of the active material structure and the second portion of the active material structure,

the second channels pass through the first portion of the active material structure, and

the second surface of the first portion of the active material structure is exposed via the first channels.

36. The electrode structure of claim 35 , wherein

the first portion of the active material structure comprises first active material lines extending in the second direction,

wherein the second channels are provided between the first active material lines.

37. The electrode structure of claim 33 , wherein

wherein the thickness of the active material structure is in a range of about 50 micrometers to about 1,000 micrometers.

38. The electrode structure of claim 33 , wherein

a width of a first channel measured in the second direction is in a range of about 0.5 micrometers to about 10 micrometers,

a width of a second channel measured in the first direction is in a range of about 0.5 micrometers to about 10 micrometers,

a distance between a pair of first channels adjacent to each other is in a range of about 1 micrometers to about 500 micrometers, and

a distance between a pair of second channels adjacent to each other is in a range of about 1 micrometers to about 500 micrometers.

39. The electrode structure of claim 33 , further comprising third channels intersecting the first channels and the second channels and extending in the third direction parallel to the first surface of the current collector layer,

wherein the first surface of the second portion of the active material structure is exposed via the third channels.

40. The electrode structure of claim 33 , wherein the first channels and the second channels intersect each other between the second portion of the active material structure and the first portion of the active material structure.

41. A secondary battery comprising:

a first electrode structure on a second electrode structure;

a separator between the second electrode structure and the first electrode structure;

wherein the second electrode structure comprises:

first active material lines arranged in a first direction;

second active material lines arranged in a second direction intersecting the first direction;

intermediate active material lines provided between the first active material lines and the second active material lines in a third direction intersecting the first direction and the second direction, the intermediate active material lines provided in overlapping regions of the first active material lines and the second active material lines,

first channels between the first active material lines; and

second channels between the second active material lines;

wherein the first active material lines and the second active material lines are electrically connected by the intermediate active material lines, and

wherein the first active material lines, the second active material lines, the intermediate active material lines, or a combination thereof comprises a cathode active material,

wherein a depth of a first channel measured in the third direction is about 50% to about 80% of a thickness of the active material structure measured in the third direction, and

wherein a depth of a second channel measured in the third direction is about 50% to about 80% of the thickness of the active material structure.

42. The second battery of claim 41 , wherein the second electrode structure further comprises a current collector layer provided at opposite sides of the intermediate active material lines with the second active material lines therebetween.

43. The second battery of claim 41 ,

wherein

the first active material lines comprise first surfaces and second surfaces opposite one another,

the second active material lines comprise third surfaces and fourth surfaces opposite one another,

the third surfaces is between the second surfaces and the fourth surfaces,

the second surfaces is between the first surfaces and the third surfaces,

the first channels extend between the intermediate active material lines, thus exposing the third surfaces,

the second channels extend between the intermediate active material lines, thus exposing the second surfaces, and

the first channels and the second channels intersect each other between the intermediate active material lines.

44. The second battery of claim 43 , further comprising an electrolyte in the first channels and the second channels.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (67)