Package comprising a substrate and a high-density interconnect integrated device
A package comprising a substrate, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, an interconnect integrated device coupled to the first integrated device and the second integrated device, and an underfill. The substrate includes a cavity. The interconnect integrated device is located over the cavity of the substrate. The underfill is located (i) between the first integrated device and the substrate, (ii) between the second integrated device and the substrate, (iii) between the interconnect integrated device and the first integrated device, and (iv) between the interconnect integrated device and the second integrated device.
1. A package comprising:
a substrate comprising a cavity that extends through an entire thickness of the substrate;
a first integrated device coupled to the substrate, wherein the first integrated device includes a first front side that faces in a direction towards the substrate;
a second integrated device coupled to the substrate, wherein the second integrated device includes a second front side that faces in a direction towards the substrate;
an interconnect integrated device coupled to the first integrated device and the second integrated device, wherein the interconnect integrated device is located (i) over the cavity of the substrate and (ii) only partially in the cavity of the substrate; and
an underfill configured to underfill the first integrated device and the second integrated device, the underfill located (i) between the first integrated device and the substrate, (ii) between the second integrated device and the substrate, (iii) between the interconnect integrated device and the first integrated device, and (iv) between the interconnect integrated device and the second integrated device, and
wherein the underfill is a single underfill layer that directly touches (i) the first front side of the first integrated device, (ii) the second front side of the second integrated device and (iii) a surface of the substrate, and
wherein the underfill is further located in at least part of the cavity of the substrate.
2. The package of claim 1 , wherein the first integrated device, the second integrated device and the interconnect integrated device are configured to provide an electrical path for an electrical signal between the first integrated device and the second integrated device, that extends through the interconnect integrated device and bypasses the substrate.
3. The package of claim 1 , wherein the underfill comprises a viscosity of approximately 10-30 pascal second (Pa·s).
4. The package of claim 1 , wherein the underfill comprises a filler that represents approximately 50-90 percent of the weight of the underfill.
5. The package of claim 1 ,
wherein the interconnect integrated device comprises a die substrate, at least one dielectric layer and a plurality of interconnects, and
wherein a first portion of (i) the at least one dielectric layer and (ii) the plurality of interconnects, is located in the cavity of the substrate, and
wherein a second portion of (i) the at least one dielectric layer and (ii) the plurality of interconnects, is located outside of the cavity of the substrate.
6. The package of claim 5 , wherein the die substrate includes silicon, glass and/or quartz.
7. The package of claim 5 ,
wherein a minimum width for the plurality of interconnects of the interconnect integrated device is in a range of approximately 2-5 micrometers (μm), and
wherein a minimum spacing for the plurality of interconnects of the interconnect integrated device is in a range of approximately 2-5 micrometers (μm).
8. The package of claim 1 , wherein the interconnect integrated device includes a die that is free of a transistor coupled to a circuit.
9. The package of claim 1 , wherein the underfill is further located over the first integrated device and the second integrated device.
10. The package of claim 1 , further comprising an encapsulation layer located over the substrate, wherein the encapsulation layer is a different layer from the underfill layer.
11. The package of claim 1 , further comprising an encapsulation layer coupled to the underfill, wherein the encapsulation layer is a different layer from the underfill layer.
12. The package of claim 1 ,
wherein the interconnect integrated device is coupled to the first integrated device through a first plurality of solder interconnects and a first plurality of pillar interconnects such that (i) the first plurality of solder interconnects directly touch the first integrated device and the first plurality of pillar interconnects and (ii) the first plurality of pillar interconnects directly touch the interconnect integrated device,
wherein the interconnect integrated device is coupled to the second integrated device through a second plurality of solder interconnects and a second plurality of pillar interconnects such that (i) the second plurality of solder interconnects directly touch the second integrated device and the second plurality of pillar interconnects and (ii) the second plurality of pillar interconnects directly touch the interconnect integrated device,
wherein the first integrated device is coupled to the substrate through a third plurality of pillar interconnects and a third plurality of solder interconnects such that (i) the third plurality of solder interconnects directly touch the substrate and the third plurality of pillar interconnects and (ii) the third plurality of pillar interconnects directly touch the first integrated device, and
wherein the second integrated device is coupled to the substrate through a fourth plurality of pillar interconnects and a fourth plurality of solder interconnects such that (i) the fourth plurality of solder interconnects directly touch the substrate and the fourth plurality of pillar interconnects and (ii) the fourth plurality of pillar interconnects directly touch the second integrated device.
13. The package of claim 1 , wherein the underfill comprises a capillary underfill and/or a mold underfill.
14. An apparatus comprising:
a substrate comprising a cavity through an entire thickness of the substrate;
a first integrated device coupled to the substrate through a first plurality of pillar interconnects and a first plurality of solder interconnects,
wherein the first plurality of pillar interconnects are coupled to and directly touch the first integrated device, and
wherein the first plurality of solder interconnects directly touch the first plurality of pillar interconnects and the substrate;
a second integrated device coupled to the substrate through a second plurality of pillar interconnects and a second plurality of solder interconnects,
wherein the second plurality of pillar interconnects are coupled to and directly touch the second integrated device, and
wherein the second plurality of solder interconnects directly touch the second plurality of pillar interconnects and the substrate;
a means for integrated device interconnection coupled to the first integrated device and the second integrated device through a third plurality of pillar interconnects and a third plurality of solder interconnects,
wherein the third plurality of pillar interconnects are coupled to the means for integrated device interconnection,
wherein a first set of solder interconnects from the third plurality of solder interconnects directly touch the first integrated device,
wherein a second set of solder interconnects from the third plurality of solder interconnects directly touch the second integrated device, and
wherein the means for integrated device interconnection is located over the cavity of the substrate; and
an underfill configured to underfill the first integrated device and the second integrated device, the underfill located (i) between the first integrated device and the substrate, (ii) between the second integrated device and the substrate, (iii) between the means for integrated device interconnection and the first integrated device, and (iv) between the means for integrated device interconnection and the second integrated device, and
wherein the underfill is a single underfill layer that directly touches a first front side of the first integrated device, a second front side of the second integrated device, a surface of the substrate, the first plurality of pillar interconnects and the second plurality of pillar interconnects, and
wherein the underfill is further located in at least part of the cavity of the substrate.
15. The apparatus of claim 14 , wherein the first integrated device, the second integrated device and the means for integrated device interconnection are configured to provide an electrical path for an electrical signal between the first integrated device and the second integrated device, that extends through the means for integrated device interconnection and bypasses the substrate.
16. The apparatus of claim 14 , wherein the underfill comprises a capillary underfill and/or a mold underfill.
17. The apparatus of claim 14 , wherein the underfill comprises a viscosity of approximately 10-30 pascal second (Pa·s).
18. The apparatus of claim 14 , wherein the underfill comprises a filler that represents approximately 50-90 percent of the weight of the underfill.
19. The apparatus of claim 14 ,
wherein the means for integrated device interconnection comprises a die substrate, at least one dielectric layer and a plurality of interconnects, and
wherein a front side of the means for integrated device interconnection faces in the direction of the first integrated device and the second integrated device.
20. The apparatus of claim 19 , wherein the die substrate includes silicon, glass and/or quartz.
21. The apparatus of claim 19 ,
wherein a minimum width for the plurality of interconnects of the means for integrated device interconnection is in a range of approximately 2-5 micrometers (μm), and
wherein a minimum spacing for the plurality of interconnects of the means for integrated device interconnection is in a range of approximately 2-5 micrometers (μm).
22. The apparatus of claim 14 ,
wherein the means for integrated device interconnection includes a die that is free of a transistor coupled to a circuit, and
wherein a front side of the means for integrated device interconnection faces in the direction of the first integrated device and the second integrated device.
23. The apparatus of claim 14 , wherein the apparatus includes a device selected from a group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, an internet of things (IOT) device, and a device in an automotive vehicle.
24. The apparatus of claim 14 ,
wherein the first front side of the first integrated device faces in a direction towards the substrate and the second front side of the second integrated device faces in a direction towards the substrate, and
wherein a coupling between the third plurality of pillar interconnects and the means for integrated device interconnection is free of solder interconnects.
25. A method for fabricating a package, comprising:
providing a substrate comprising a cavity that extends through an entire thickness of the substrate;
coupling a first integrated device to the substrate through a first plurality of pillar interconnects and a first plurality of solder interconnects,
wherein the first plurality of pillar interconnects are coupled to and directly touch the first integrated device, and
wherein the first plurality of solder interconnects directly touch the first plurality of pillar interconnects and the substrate;
coupling a second integrated device to the substrate through a second plurality of pillar interconnects and a second plurality of solder interconnects,
wherein the second plurality of pillar interconnects are coupled to and directly touch the second integrated device, and
wherein the second plurality of solder interconnects directly touch the second plurality of pillar interconnects and the substrate;
coupling an interconnect integrated device to the first integrated device and the second integrated device through a third plurality of pillar interconnects and a third plurality of solder interconnects,
wherein the third plurality of pillar interconnects are coupled to the interconnect integrated device,
wherein a first set of solder interconnects from the third plurality of solder interconnects are coupled to the first integrated device,
wherein a second set of solder interconnects from the third plurality of solder interconnects are coupled to the second integrated device, and
wherein the interconnect integrated device is located over the cavity of the substrate; and
forming an underfill configured to underfill the first integrated device and the second integrated device, the underfill located (i) between the first integrated device and the substrate, (ii) between the second integrated device and the substrate, (iii) between the interconnect integrated device and the first integrated device, and (iv) between the interconnect integrated device and the second integrated device, and
wherein the underfill is formed such that the underfill is a single underfill layer that directly touches (i) a first horizontal surface of the first integrated device and (ii) a second horizontal surface of the second integrated device, and (iii) a surface of the substrate, and
wherein forming the underfill further comprises forming the underfill in at least part of the cavity of the substrate.
26. The method of claim 25 , wherein the first integrated device, the second integrated device and the interconnect integrated device are configured to provide an electrical path for an electrical signal between the first integrated device and the second integrated device, that extends through the interconnect integrated device and bypasses the substrate.
27. The method of claim 25 , wherein the underfill comprises a viscosity of approximately 10-30 pascal second (Pa·s).
28. The method of claim 25 , wherein the underfill comprises a filler that represents approximately 50-90 percent of the weight of the underfill.
29. The method of claim 25 , wherein the interconnect integrated device comprises a die substrate, at least one dielectric layer and a plurality of interconnects.
30. The method of claim 25 , wherein the interconnect integrated device includes a die that is free of a transistor coupled to a circuit.
31. The method of claim 25 , wherein the underfill comprises a capillary underfill and/or a mold underfill.
32. The method of claim 25 , wherein the interconnect integrated device includes a third horizontal surface closest to either the first integrated device or the second integrated device and the substrate includes a fourth horizontal surface closest to either the first integrated device or the second integrated device, the third horizontal surface is in a first horizontal plane and the fourth horizontal surface is in a second horizontal plane, the first horizontal plane is above the second horizontal plane.