Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) removing a natural oxide film from a surface of a substrate by supplying a first inorganic material to the substrate wherein a first film and a second film different from the first film are exposed on the surface of the substrate; (b) forming an oxide film by oxidizing a surface of the first film by supplying an oxidizing agent to the substrate; (c) modifying the surface of the first film by supplying a second inorganic material to the substrate; and (d) selectively growing a thin film on a surface of the second film by supplying a deposition gas to the substrate, wherein (a) through (d) are sequentially performed.
1. A substrate processing method, comprising:
(a) providing a substrate where a natural oxide film is removed from a surface thereof by supplying a first inorganic material to the substrate wherein at least a first film containing silicon and a second film different from the first film are exposed on the surface of the substrate;
(b) forming an oxide film on a surface of the first film by supplying an oxidizing agent to the substrate;
(c) modifying the oxide film formed on the surface of the first film by supplying a second inorganic material to the substrate; and
(d) after sequentially performing (a), (b) and (c), selectively growing a film on a surface of the second film by supplying a deposition gas to the substrate.
2. The method of claim 1 , wherein the first inorganic material comprises a first halogen-based material containing a halogen element.
3. The method of claim 2 , wherein the first halogen-based material comprises hydrogen fluoride.
4. The method of claim 1 , wherein the oxidizing agent comprises at least one among ammonia, hydrogen peroxide solution, hydrogen peroxide gas, a mixed gas of an active species of oxygen and an active species of hydrogen and oxygen gas.
5. The method of claim 1 , wherein the oxidizing agent comprises a mixed solution of ammonia and hydrogen peroxide solution.
6. The method of claim 1 , wherein the second inorganic material comprises a second halogen-based material.
7. The method of claim 6 , wherein the second halogen-based material comprises a fluorine-containing gas.
8. The method of claim 7 , wherein the deposition gas comprises a source gas and a reactive gas reacting with the source gas, and
wherein the source gas and the reactive gas are alternately supplied so as not to be mixed with each other in (d).
9. The method of claim 1 , wherein the deposition gas comprises a source gas and a reactive gas reacting with the source gas, and
wherein the source gas and the reactive gas are alternately supplied so as not to be mixed with each other in (d).
10. The method of claim 9 , wherein the source gas comprises a third halogen-based material.
11. The method of claim 9 , wherein the source gas comprises a chlorine-containing gas.
12. The method of claim 1 , wherein the first film comprises a silicon film.
13. The method of claim 1 , wherein the second film comprises a silicon nitride film.
14. The method of claim 1 , wherein the film comprises a nitride film.
15. The method of claim 1 , further comprising
(e) etching the film slightly formed on a portion of the surface of the substrate other than the surface of the second film by supplying an etching gas to the substrate after (d).
16. The method of claim 15 , wherein (c), (d) and (e) are sequentially performed a plurality of times.
17. The method of claim 1 , wherein a third film different from both of the first film and the second film is exposed on the surface of the substrate, and
wherein in (c), the surface of the first film and a surface of the third film are modified.
18. The method of claim 17 , wherein the first film comprises a silicon film, and
wherein the third film comprises a silicon oxide film.
19. The method of claim 17 , wherein in (d), the film is firstly deposited on the surface of the second film compared to the surface of the first film and the surface of the third film.
20. A substrate processing apparatus comprising:
a first gas supply system configured to supply a first inorganic material to a substrate wherein at least a first film containing silicon and a second film different from the first film are exposed on a surface of the substrate;
a second gas supply system configured to supply an oxidizing agent to the substrate;
a third gas supply system configured to supply a second inorganic material to the substrate;
a fourth gas supply system configured to supply a deposition gas to the substrate; and
a controller capable of controlling the first gas supply system, the second gas supply system, the third gas supply system and the fourth gas supply system to perform:
(a) providing a substrate where a natural oxide film is removed from the surface thereof by supplying the first inorganic material to the substrate;
(b) forming an oxide film on a surface of the first film by supplying the oxidizing agent to the substrate;
(c) modifying the oxide film formed on the surface of the first film by supplying the second inorganic material to the substrate; and
(d) after sequentially performing (a), (b) and (c), selectively growing a film on a surface of the second film by supplying the deposition gas to the substrate.
21. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
(a) providing a substrate where a natural oxide film is removed from a surface thereof by supplying a first inorganic material to the substrate wherein at least a first film containing silicon and a second film different from the first film are exposed on the surface of the substrate;
(b) forming an oxide film on a surface of the first film by supplying an oxidizing agent to the substrate;
(c) modifying the oxide film formed on the surface of the first film by supplying a second inorganic material to the substrate; and
(d) after sequentially performing (a), (b) and (c), selectively growing a film on a surface of the second film by supplying a deposition gas to the substrate.
22. A method of manufacturing a semiconductor device, comprising the method of claim 1 .