Magnetoresistive memory device including a reference layer side dielectric spacer layer
A memory device includes a first electrode, a second electrode that is spaced from the first electrode, a fixed vertical magnetization structure configured to generate a fixed vertical magnetic field and located between the first electrode and the second electrode, at least one layer stack located between the fixed magnetization structure and the second electrode and containing respective spacer dielectric layer and a respective additional reference layer including a respective ferromagnetic material having perpendicular magnetic anisotropy, and a magnetic tunnel junction located between the at least one layer stack and the second electrode, the magnetic tunnel junction containing a reference layer, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, and the reference layer being more proximal to the at least one layer stack than the free layer is to the at least one layer stack.
1. A memory device, comprising:
a first electrode;
a second electrode that is spaced from the first electrode;
a fixed vertical magnetization structure configured to generate a fixed vertical magnetic field and located between the first electrode and the second electrode;
at least one layer stack located between the fixed magnetization structure and the second electrode and comprising a respective spacer dielectric layer and a respective additional reference layer including a respective ferromagnetic material having perpendicular magnetic anisotropy; and
a magnetic tunnel junction located between the at least one layer stack and the second electrode, the magnetic tunnel junction comprising a reference layer, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, and the reference layer being more proximal to the at least one layer stack than the free layer is to the at least one layer stack.
2. The memory device of claim 1 , wherein the reference layer has a thickness greater than 0.6 nm.
3. The memory device of claim 1 , wherein the at least one spacer dielectric layer comprises a spacer dielectric metal oxide layer.
4. The memory device of claim 3 , wherein the spacer dielectric metal oxide layer comprises magnesium oxide.
5. The memory device of claim 3 , wherein the spacer dielectric metal oxide layer comprises hafnium oxide, tantalum oxide, or aluminum oxide.
6. The memory device of claim 3 , wherein the spacer dielectric metal oxide layer has a smaller thickness than the nonmagnetic tunnel barrier layer.
7. The memory device of claim 1 , wherein the at least one additional reference layer comprises CoFe or CoFeB.
8. The memory device of claim 1 , wherein the at least one layer stack comprises a plurality of the layer stacks.
9. The memory device of claim 8 , wherein the at least one spacer dielectric layer comprises:
at least one first spacer dielectric layer that comprises a dielectric metal oxide other than magnesium oxide; and
at least one second spacer dielectric layer that is located between the at least one first spacer dielectric layer and the magnetic tunnel junction and that comprises magnesium oxide.
10. The memory device of claim 9 , wherein the at least one additional reference layer comprises:
at least one first additional reference layer that consists essentially of CoFe; and
at least one second additional reference layer that is located between the at least one first additional reference layer and the magnetic tunnel junction and that consists essential of CoFeB.
11. The memory device of claim 1 , further comprising a nonmagnetic refractory spacer metal layer located between the fixed vertical magnetization structure and the at least one layer stack.
12. The memory device of claim 1 , wherein the fixed vertical magnetization structure comprises a synthetic antiferromagnet (SAF) structure including a first superlattice, a second superlattice, and an antiferromagnetic coupling layer that provides antiferromagnetic coupling between the first superlattice and the second superlattice.
13. The memory device of claim 12 , wherein:
the first superlattice comprises a first superlattice of first cobalt layers and first platinum layers; and
the second superlattice comprises a second superlattice of second cobalt layers and second platinum layers.
14. The memory device of claim 1 , wherein the nonmagnetic tunnel barrier layer comprises magnesium oxide or a spinel material.
15. The memory device of claim 1 , wherein the memory device comprises at least three ferromagnetic-dielectric interfaces located between the first electrode and nonmagnetic tunnel barrier layer.
16. The memory device of claim 1 , further comprising at least one nonmagnetic metal dust layer located between the nonmagnetic tunnel barrier layer and a respective one of the free layer and the reference layer, and consisting essentially of at least one elemental metal selected from Ir, Pd, Mg, Pt, W, Ta, Hf, Pd, Ru, or Rh.
17. The memory device of claim 1 , further comprising at least one nonmagnetic metal dust layer contacting the at least one spacer dielectric layer and the at least one additional reference layer, and consisting essentially of at least one elemental metal selected from Ir, Pd, Mg, Pt, W, Ta, Hf, Pd, Ru, or Rh.
18. The memory device of claim 1 , wherein the at least one spacer dielectric layer has a lesser resistance-area (RA) product than the nonmagnetic tunnel barrier layer.
19. The memory device of claim 1 , wherein the memory device comprises a spin-transfer torque (STT) magnetoresistive memory device.
20. A memory device, comprising:
a first electrode;
a second electrode that is spaced from the first electrode;
a synthetic antiferromagnetic structure (SAF) structure located between the first electrode and the second electrode;
a magnetic tunnel junction located between the SAF and the second electrode, the magnetic tunnel junction comprising a reference layer, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer; and
at least one nonmagnetic metal dust layer located between the nonmagnetic tunnel barrier layer and a respective one of the free layer and the reference layer, and consisting essentially of at least one elemental metal selected from Ir, Pd, Mg, Pt, W, Ta, Hf, Pd, Ru, or Rh;
wherein the memory device comprises at least three ferromagnetic-dielectric interfaces located between the first electrode and the second electrode.