IP Library Granted Patent US 11,955,393
Granted Patent B2
US 11,955,393 · App. 17/315,170 · Granted Apr 9, 2024

Structures for bonding elements including conductive interface features

Inventors: Rajesh Katkar (Milpitas, CA); Laura Wills Mirkarimi (Sunol, CA); Bongsub Lee (Mountain View, CA); Gaius Gillman Fountain, Jr. (Youngsville, NC); Cyprian Emeka Uzoh (San Jose, CA)
Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
H01L23/10H01L21/76807H01L21/76816H01L24/08H01L2924/01029
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,955,393
App. No.
17/315,170
Granted
Apr 9, 2024
Kind
B2
Abstract

A bonded structure is disclosed. The bonded structure includes a first element and a second element that is bonded to the first element along a bonding interface. The bonding interface has an elongate conductive interface feature and a nonconductive interface feature. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The elongate conductive interface feature has a recess through a portion of a thickness of the elongate conductive interface feature. A portion of the nonconductive interface feature is disposed in the recess.

Claims (15)

1. A bonded structure comprising:

a first element comprising a first conductive interface feature and a first nonconductive interface feature; and

a second element comprising a second conductive interface feature and a second nonconductive interface feature, the second element being stacked on the first element along a vertical dimension, the second conductive interface feature bonded to the first conductive interface feature along a bonding interface and the second nonconductive interface feature bonded to the first nonconductive interface feature along the bonding interface,

wherein a first cross-section of the first conductive interface feature taken along a lateral dimension transverse to the vertical dimension of the first conductive interface feature has a first overall thickness along the vertical dimension,

wherein a second cross-section of the first conductive interface feature along the lateral dimension of the first conductive feature has a second overall thickness along the vertical dimension, the first overall thickness different from the second overall thickness, and

wherein the first conductive interface feature has a back side opposite the bonding interface, the nonconductive interface feature disposed over the back side of the first conductive interface feature.

2. The bonded structure of claim 1 , further comprising an integrated device coupled to or formed with the first element or the second element.

3. The bonded structure of claim 2 , wherein the first conductive interface feature is not electrically connected to the integrated device.

4. The bonded structure of claim 2 , wherein the first conductive interface feature is disposed along the bonding interface around the integrated device.

5. The bonded structure of claim 1 , wherein the first cross-section of the first conductive interface feature includes a recess formed on a back side of the first conductive interface feature.

6. The bonded structure of claim 1 , wherein a height of the first cross-section of the first conductive interface feature is shorter than a height of the second cross-section.

7. The bonded structure of claim 1 , wherein the first conductive interface feature is an elongate conductive interface feature that has a length longer than a width.

8. The bonded structure of claim 1 , wherein the first cross-section of the first conductive interface feature comprises a first recess portion and the second cross-section of the first conductive interface feature does not comprise a recess.

9. The bonded structure of claim 8 , wherein a third cross-section of the first conductive interface feature taken along a lateral dimension of the first conductive interface feature has a third overall thickness along a vertical dimension transverse to the lateral dimension that is different from the second overall thickness.

10. The bonded structure of claim 1 , further comprising a cavity formed between the first element and the second element, wherein the first conductive interface feature and the second conductive interface feature forms a hermetic seal ring for the cavity.

Assignments (4)
CHANGE OF NAME Recorded Mar 6, 2024
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 066745/0324 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 1, 2024
From: KATKAR, RAJESH; MIRKARIMI, LAURA WILLS; LEE, BONGSUB; FOUNTAIN, GAIUS GILLMAN, JR.; UZOH, CYPRIAN EMEKA
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 066758/0501 →
CHANGE OF NAME Recorded Aug 16, 2023
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 064615/0911 →
SECURITY INTEREST Recorded May 19, 2023
From: ADEIA GUIDES INC.; ADEIA MEDIA HOLDINGS LLC; ADEIA MEDIA SOLUTIONS INC.; ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.; ADEIA SEMICONDUCTOR SOLUTIONS LLC; ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 063707/0884 →
Continuity (4)
Division 16235585 · Dec 28, 2018
Provisional Application 62686534 · Jun 18, 2018
Provisional Application 62671377 · May 14, 2018
Related Publication 20210265227A1 · Aug 26, 2021
Cited By (4)
US 12,322,667 US 12,374,641 US 12,381,119 US 12,690,488