3D semiconductor device and structure
A 3D semiconductor device, the device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, and where the second level includes at least one voltage regulator.
1. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded additionally comprises metal to metal bond regions made on a same level as the oxide to oxide bonds, and
wherein said second level comprises at least one voltage regulator.
2. The device according to claim 1 ,
wherein said second level comprises at least one PLL circuit.
3. The device according to claim 1 ,
wherein said second level comprises at least one SerDes circuit.
4. The device according to claim 1 ,
wherein said first level comprises at least one control circuit, wherein said second level comprises at least one memory array, and
wherein said control circuit controls data written to said at least one memory array.
5. The device according to claim 1 ,
wherein at least one of said second transistors is a FinFET type transistor.
6. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said second level comprises at least one voltage regulator,
wherein said first level comprises a first clock tree,
wherein said second level comprises a second clock tree, and
wherein at least one of said connection paths comprises connecting between said first clock tree and said second clock tree.
7. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond,
wherein said second level comprises at least one voltage regulator,
wherein said first level comprises a first die area,
wherein said second level comprises a second die area, and
wherein said first die area is larger than said second die area.
8. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded additionally comprises metal to metal bond regions made on a same level as the oxide to oxide bonds, and
wherein said second level comprises at least one charge pump circuit.
9. The device according to claim 8 ,
wherein said second level comprises at least one PLL circuit.
10. The device according to claim 8 ,
wherein said second level comprises at least one SerDes circuit.
11. The device according to claim 8 ,
wherein said first level comprises at least one control circuit, wherein said second level comprises at least one memory array, and
wherein said control circuit controls data written to said at least one memory array.
12. The device according to claim 8 ,
wherein at least one of said second transistors is a FinFET type transistor.
13. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said second level comprises at least one charge pump circuit,
wherein said first level comprises a first clock tree,
wherein said second level comprises a second clock tree, and
wherein at least one of said connection paths comprises connecting between said first clock tree and said second clock tree.
14. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said second level comprises at least one charge pump circuit,
wherein said first level comprises a first die area,
wherein said second level comprises a second die area, and
wherein said first die area is larger than said second die area.