Semiconductor package with intermetallic-compound solder-joint comprising solder, UBM, and reducing layer materials
Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.
1. A method of fabricating a semiconductor package, the method comprising:
preparing a lower element including a lower substrate, a lower electrode on the lower substrate, an under bump metallurgy (UBM) layer on the lower electrode, and a reducing agent layer on the UBM layer;
providing an upper element including an upper substrate, an upper electrode on the upper substrate, and a solder bump layer on the upper electrode;
providing a pressing member on the upper substrate to press the upper substrate to the lower substrate; and
providing a laser beam passing through the pressing member to the upper substrate to form the UBM layer, the reducing agent layer, and the solder bump layer as an intermetallic compound layer by using a conductive heat of the upper substrate and the upper electrode.
2. The method of claim 1 , wherein the UBM layer comprises nickel, copper, and an alloy of nickel-copper.
3. The method of claim 1 , wherein the reducing agent layer comprises hydrates of carboxylic hydrate, hydroxyl hydrate, and phenolic hydrate.
4. The method of claim 1 , wherein the solder bump layer comprises solders of tin (Sn), indium (In), tin bismuth (SnBi), tin silver copper (SnAgCu), tin silver (SnAg), gold tin (AuSn), indium tin (InSn), and bismuth indium tin (BiInSn).
5. The method of claim 1 , wherein the lower substrate comprises a light emitting element, and
the upper substrate includes a lead.
6. The method of claim 1 , wherein the lower element further comprises an absorption layer between the UBM layer and the reducing agent layer.
7. The method of claim 6 , wherein the absorption layer comprises:
a plate-shaped absorber; and
metal powder bonded to the plate-shaped absorber.
8. The method of claim 7 , wherein the plate-shaped absorber comprises graphene.
9. The method of claim 7 , wherein the metal powder comprises nickel or copper.
10. The method of claim 1 , wherein the lower substrate further comprises partition walls outside the upper element.
11. The method of claim 10 , further comprising providing an elastic member between the pressing member and each of the partition walls and between the pressing member and the upper substrate,
wherein the elastic member comprises polydimethylsiloxane (PDMS), silicon, or silica.
12. The method of claim 10 , further comprising providing a polymer film between the pressing member and each of the partition walls and between the pressing member and the upper substrate.
13. The method of claim 12 , wherein the polymer film is transparent and has a convex shape in a downward direction.
14. The method of claim 12 , wherein the polymer film comprises polymethylmethacrylate (PMMA), polycarbonate, or polyimide.
15. The method of claim 1 , wherein the lower element further comprises:
a curing agent layer between the UBM layer and the reducing agent layer; and
a base material layer between the curing agent layer and the reducing agent layer.
16. The method of claim 15 , wherein the curing agent layer comprises aliphatic amine, and
the base material layer includes epoxy.
17. The method of claim 15 , wherein the curing agent layer and the base material layer are formed as a protective layer around the intermetallic compound layer.
18. The method of claim 17 , further comprising dipping the lower element and the upper element in DI (deionized) water through which the laser beam is transmitted,
wherein the DI water allows the protective layer to be formed around the lower electrode and the upper electrode.
19. The method of claim 18 , further comprising bubbling the DI water.
20. The method of claim 18 , further comprising removing the DI water to dry the lower element and the upper element.