Granted Patent
B2
US 12,720,828 · App. 17/467,943 · Granted Aug 25, 2026
Semiconductor film
View Patent ↗
Loading inventors, assignments & file history…
Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Sep 7, 2021
From: WATANABE, MORIMICHI; FUKUI, HIROSHI
To: NGK INSULATORS, LTD.
Reel/Frame 057400/0429 →
Priority Claims (1)
JP 2019-063603
· Mar 28, 2019
· national
Continuity (2)
Continuation
PCTJP2019017940
· Apr 26, 2019
References Cited (34)
US 20170288061A1
· Sasaki
· 2017
[cited by examiner]
US 20200083332A1
· Lee
· 2020
[cited by examiner]
EP 3141635A1
· 2017
[cited by examiner]
JP 2014072533A1
· 2014
[cited by applicant]
JP 2015017027A1
· 2015
[cited by applicant]
JP 2015196603A1
· 2015
[cited by applicant]
JP 2015196603A
· 2015
[cited by examiner]
JP 2016025256A1
· 2016
[cited by applicant]
JP 2016155714A1
· 2016
[cited by applicant]
JP 2016155714A
· 2016
[cited by examiner]
JP-2016155714-A machine translation (Year: 2023).
[cited by examiner]
JP-2015196603-A machine translation (Year: 2023).
[cited by examiner]
Pearton et al., “A review of Ga2O3 materials, processing, and devices.”, Appl. Phys. Rev. Mar. 1, 2018; 5 (1): 011301. https://doi.org/10.1063/1.5006941. (Year: 2018).
[cited by examiner]
Jamwal et al., “Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications. Nanomaterials.” 2022; 12(12): 2061. https://doi.org/10.3390/nano12122061 (Year: 2022).
[cited by examiner]
Wikipedia, “Doping_(semiconductors)”, https://en.wikipedia.org/wiki/Doping_(semiconductor) (Year: 2025).
[cited by examiner]
TMSC, part of the 2005 investor report, https://investor.tsmc.com/static/annualReports/2005/pic/E-3-3.pdf (Year: 2005).
[cited by examiner]
Vobecky et al., “Doping compensation for increased robustness of fast recovery silicon diodes”, Microelectriconics reliability, 50 (2010) 32-38 (Year: 2010).
[cited by examiner]
MSE Supplies, https://www.msesupplies.com/products/mse-pro-1-cassette-qty-25-of-100-mm-n-type-p-doped-prime-grade-silicon-wafer-100-ssp-1-10-ohm-cm. (Year: 2025).
[cited by examiner]
International Search Report and Written Opinion (Application No. PCT/JP2019/017940) dated Jul. 2, 2019 (with English translation).
[cited by applicant]
Jinno et al., “Reduction in Edge Dislocation Density in Corundum-Structured a-Ga
[cited by applicant]