3D semiconductor device and structure with transistors
A semiconductor device, the device including: a plurality of transistors, where at least one of the plurality of transistors includes a first single crystal source, channel, and drain, where at least one of the plurality of transistors includes a second single crystal source, channel, and drain, where the second single crystal source, channel, and drain is disposed above the first single crystal source, channel, and drain, where at least one of the plurality of transistors includes a third single crystal source, channel, and drain, where the third single crystal source, channel, and drain is disposed above the second single crystal source, channel, and drain, where at least one of the plurality of transistors includes a fourth single crystal source, channel, and drain, and where the first single crystal source or drain, and the second single crystal source or drain each include n+ doped regions.
1. A semiconductor device, the device comprising:
a plurality of transistors,
wherein at least one of said plurality of transistors comprises a first single crystal source, channel, and drain,
wherein at least one of said plurality of transistors comprises a second single crystal source, channel, and drain,
wherein said second single crystal source, channel, and drain is disposed above said first single crystal source, channel, and drain,
wherein at least one of said plurality of transistors comprises a third single crystal source, channel, and drain,
wherein said third single crystal source, channel, and drain is disposed above said second single crystal source, channel, and drain,
wherein at least one of said plurality of transistors comprises a fourth single crystal source, channel, and drain, and
wherein said fourth single crystal source, channel, and drain is disposed above said third single crystal source, channel, and drain; and
an ohmic connection between said first single crystal source or drain and said second single crystal source or drain.
2. The device according to claim 1 ,
wherein said first single crystal channel is self-aligned to said second single crystal channel being processed following the same lithography step.
3. The device according to claim 1 , further comprising:
at least one region of oxide to oxide bonds.
4. The device according to claim 1 ,
wherein at least one of said plurality of transistors comprises two side gates.
5. The device according to claim 1 ,
wherein at least one of said plurality of transistors comprises a gate all around structure.
6. The device according to claim 1 , further comprising:
a first gate structure, and
wherein said first gate structure controls at least one of said first single crystal channels and at least one of said second single crystal channels.
7. The device according to claim 1 , further comprising:
a first gate structure, and
wherein said first gate structure controls at least one of said first single crystal channels and at least one of said third single crystal channels.
8. A semiconductor device, the device comprising:
a plurality of transistors,
wherein at least one of said plurality of transistors comprises a first single crystal source, channel, and drain,
wherein at least one of said plurality of transistors comprises a second single crystal source, channel, and drain,
wherein said second single crystal source, channel, and drain is disposed above said first single crystal source, channel, and drain,
wherein at least one of said plurality of transistors comprises a third single crystal source, channel, and drain,
wherein said third single crystal source, channel, and drain is disposed above said second single crystal source, channel, and drain,
wherein at least one of said plurality of transistors comprises a fourth single crystal source, channel, and drain, and
wherein said first single crystal source or drain, and said second single crystal source or drain each comprise n+ doped regions.
9. The device according to claim 8 ,
wherein said first single crystal channel is self-aligned to said second single crystal channel being processed following the same lithography step.
10. The device according to claim 8 , further comprising:
at least one region of oxide to oxide bonds.
11. The device according to claim 8 ,
wherein at least one of said plurality of transistors comprises two side gates.
12. The device according to claim 8 ,
wherein at least one of said plurality of transistors comprises a gate all around structure.
13. The device according to claim 8 , further comprising:
a first gate structure,
wherein said first gate structure controls at least one of said first single crystal channels and at least one of said second single crystal channels.
14. The device according to claim 8 , further comprising:
a first gate structure,
wherein said first gate structure controls at least one of said first single crystal channels and at least one of said third single crystal channels.
15. A semiconductor device, the device comprising:
a plurality of transistors,
wherein at least one of said plurality of transistors comprises a first single crystal channel,
wherein at least one of said plurality of transistors comprises a second single crystal channel,
wherein said second single crystal channel is disposed above said first single crystal channel,
wherein at least one of said plurality of transistors comprises a third single crystal channel,
wherein said third single crystal channel is disposed above said second single crystal channel,
wherein at least one of said plurality of transistors comprises a fourth single crystal channel,
wherein said fourth single crystal channel is disposed above said third single crystal channel, and
wherein formation of said fourth single crystal channel comprises a layer transfer process.
16. The device according to claim 15 ,
wherein said first single crystal channel is self-aligned to said second single crystal channel being processed following the same lithography step.
17. The device according to claim 15 , further comprising:
regions of oxide to oxide bonds.
18. The device according to claim 15 ,
wherein at least one of said plurality of transistors comprises a gate all around structure.
19. The device according to claim 15 , further comprising:
a first gate structure,
wherein said first gate structure controls at least one of said first single crystal channels and at least one of said second single crystal channels.
20. The device according to claim 15 , further comprising:
a first gate structure,
wherein said first gate structure controls at least one of said first single crystal channels and at least one of said third single crystal channels.