Semiconductor device including metal oxide
A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.
1 . A semiconductor device comprising:
an oxide semiconductor;
a first conductor and a second conductor over the oxide semiconductor;
a first insulator in direct contact with a top surface of the first conductor;
a second insulator in direct contact with a top surface of the second conductor;
a third insulator over the first insulator and the second insulator and comprising an opening overlapping with a region between the first conductor and the second conductor;
a fourth insulator over the oxide semiconductor and in the region between the first conductor and the second conductor;
a third conductor over the fourth insulator;
a fifth insulator in direct contact with a first side surface of the first insulator, a first side surface of the first conductor, and a first side surface of the oxide semiconductor; and
a sixth insulator in direct contact with a first side surface of the second insulator, a first side surface of the second conductor, and a second side surface of the oxide semiconductor,
wherein the fourth insulator is in direct contact with a second side surface of the first conductor, a second side surface of the second conductor, a second side surface of the first insulator, and a second side surface of the second insulator in the region between the first conductor and the second conductor, and
wherein each of the first insulator, the second insulator, the fifth insulator, and the sixth insulator is a metal oxide including an amorphous structure.
2 . The semiconductor device according to claim 1 ,
wherein the metal oxide is AlO x , and
wherein x is a given number greater than 0.
3 . A semiconductor device comprising:
an oxide semiconductor;
a first conductor and a second conductor over the oxide semiconductor;
a first insulator covering the first conductor and the second conductor and comprising an opening overlapping with a region between the first conductor and the second conductor;
a second insulator over the first insulator and comprising an opening overlapping with the region between the first conductor and the second conductor;
a third insulator over the oxide semiconductor and in the region between the first conductor and the second conductor;
a third conductor over the third insulator;
a fourth insulator in direct contact with a first side surface of the first insulator, a first side surface of the first conductor, and a first side surface of the oxide semiconductor; and
a fifth insulator in direct contact with a second side surface of the first insulator, a first side surface of the second conductor, and a second side surface of the oxide semiconductor,
wherein the third insulator is in direct contact with a second side surface of the first conductor, a second side surface of the second conductor, and a third side surface of the first insulator in the region between the first conductor and the second conductor, and
wherein each of the first insulator, the fourth insulator, and the fifth insulator is a metal oxide including an amorphous structure.
4 . The semiconductor device according to claim 3 ,
wherein the metal oxide is AlO x , and
wherein x is a given number greater than 0.
5 . A semiconductor device comprising:
an oxide semiconductor;
a first conductor and a second conductor over the oxide semiconductor;
a first insulator in direct contact with a top surface of the first conductor;
a second insulator in direct contact with a first top surface of the second conductor;
a third insulator covering the first insulator and the second insulator and comprising an opening overlapping with a region between the first conductor and the second conductor;
a fourth insulator over the third insulator and comprising an opening overlapping with the region between the first conductor and the second conductor;
a fifth insulator over the oxide semiconductor and in the region between the first conductor and the second conductor; and
a third conductor over the fifth insulator,
wherein the third insulator is in direct contact with a first side surface of the first insulator, a first side surface of the second insulator, a first side surface of the first conductor, a first side surface of the second conductor, and a side surface of the oxide semiconductor,
wherein the fifth insulator is in direct contact with a second side surface of the first conductor, a second side surface of the second conductor, a second side surface of the first insulator, a second side surface of the second insulator, and a first side surface of the third insulator in the region between the first conductor and the second conductor, and
wherein each of the first insulator, the second insulator, and the third insulator is a metal oxide including an amorphous structure.
6 . The semiconductor device according to claim 5 , comprising:
a sixth insulator under the oxide semiconductor; and
a seventh insulator in contact with a top surface of the fourth insulator and a top surface of the third conductor,
wherein each of the sixth insulator and the seventh insulator is a metal oxide including an amorphous structure.
7 . The semiconductor device according to claim 6 , comprising an eighth insulator covering the seventh insulator and in contact with a top surface of the sixth insulator in a region where the eighth insulator does not overlap with the fifth insulator,
wherein the eighth insulator is a metal oxide including an amorphous structure.
8 . The semiconductor device according to claim 7 , comprising:
a ninth insulator in contact with a bottom surface of the sixth insulator; and
a tenth insulator in contact with a top surface of the seventh insulator,
wherein each of the ninth insulator and the tenth insulator is silicon nitride.
9 . The semiconductor device according to claim 5 , comprising:
a dielectric; and
a fourth conductor,
wherein an opening reaching the second conductor is formed in the second insulator, the third insulator, and the fourth insulator,
wherein the dielectric is positioned in the opening and is in contact with a second top surface of the second conductor, a third side surface of the second insulator, a second side surface of the third insulator, and a side surface of the fourth insulator, and
wherein the fourth conductor is positioned in the opening and is in contact with a top surface of the dielectric.
10 . The semiconductor device according to claim 5 , comprising:
a first nitride insulator between the first insulator and the third insulator; and
a second nitride insulator between the second insulator and the third insulator,
wherein each of the first nitride insulator and the second nitride insulator is silicon nitride.
11 . The semiconductor device according to claim 5 ,
wherein a top surface of the first insulator and a top surface of the second insulator are in contact with the third insulator.
12 . The semiconductor device according to claim 5 ,
wherein the metal oxide is AlO x , and
wherein x is a given number greater than 0.