IP Library › Granted Patent US 12,308,811
Granted Patent B2
US 12,308,811 · App. 17/658,190 · Granted May 20, 2025

Method of manufacturing a cap substrate for acoustic wave device

Inventors: Wilfred Ryan Vidamo Habana (Singapore, SG); Hidekazu Nakanishi (Sakai, JP); XiaoJun Chew (Singapore, SG); Mitsuhiro Furukawa (Nishinomiya, JP)
Assignee: Skyworks Solutions, Inc.
H03H3/02H03H9/105H03H9/54
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Quick Facts
Patent No.
US 12,308,811
App. No.
17/658,190
Granted
May 20, 2025
Kind
B2
Abstract

A method for manufacturing a packaged acoustic wave component includes forming or providing a cap substrate, forming a metal layer on a surface of the cap substrate, marking the metal layer with one or more indicia and bonding the cap substrate to a device substrate that has an acoustic wave device on a surface thereof. The metal layer is paced from and faces the acoustic wave device.

Claims (26)

1. A method of manufacturing a packaged acoustic wave component, the method comprising:

forming or providing a non-metal cap substrate;

forming a metal layer on a surface of the cap substrate;

marking the metal layer with one or more alphanumeric indicia made on the metal layer; and

bonding the cap substrate to a device substrate that has an acoustic wave device on a surface thereof such that the metal layer is spaced from and faces the acoustic wave device.

2. The method of claim 1 wherein the acoustic wave device is a bulk acoustic wave device.

3. The method of claim 1 wherein forming or providing the cap substrate includes forming a peripheral wall that is spaced from and surrounds the metal layer.

4. The method of claim 3 wherein forming or providing the cap substrate includes forming one or more pillars between the peripheral wall and the metal layer.

5. The method of claim 1 wherein forming the metal layer includes centering the metal layer on the surface of the cap substrate.

6. The method of claim 1 wherein forming the metal layer includes forming the metal layer so that the metal layer is planar.

7. The method of claim 1 wherein marking the metal layer with one or more alphanumeric indicia includes marking the metal layer with coordinates associated with a location of the cap substrate on a parent wafer.

8. The method of claim 1 wherein forming or providing the cap substrate includes forming or providing the cap substrate so that the cap substrate has a dimension of no more than 565 um by 495 um.

9. The method of claim 1 wherein forming the metal layer includes forming the metal layer so that the metal layer has a circular peripheral edge.

10. A method of manufacturing a packaged acoustic wave component, the method comprising:

forming or providing a non-metal cap substrate;

forming a metal layer on a surface of the cap substrate;

marking the metal layer with one or more alphanumeric indicia made on the metal layer; and

forming a peripheral wall attached to the cap substrate, the peripheral wall spaced from and surrounding the metal layer.

11. The method of claim 10 including bonding the cap substrate to a device substrate that has an acoustic wave device on a surface thereof such that the metal layer is spaced from and faces the acoustic wave device.

12. The method of claim 11 wherein the acoustic wave device is a bulk acoustic wave device.

13. The method of claim 10 including forming multiple pillars spaced from each other and disposed between the peripheral wall and the metal layer.

14. The method of claim 10 wherein forming the metal layer includes centering the metal layer on the surface of the cap substrate.

15. The method of claim 10 wherein forming the metal layer includes forming the metal layer so that the metal layer is planar.

16. The method of claim 10 wherein marking the metal layer with one or more alphanumeric indicia includes marking the metal layer with coordinates associated with a location of the cap substrate on a parent wafer.

17. The method of claim 10 wherein forming or providing the cap substrate includes forming or providing the cap substrate so that the cap substrate has a dimension of no more than 565 um by 495 um.

18. The method of claim 10 wherein forming the metal layer includes forming the metal layer so that the metal layer has a circular peripheral edge.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2023
From: HABANA, WILFRED RYAN VIDAMO; NAKANISHI, HIDEKAZU; CHEW, XIAO JUN; FURUKAWA, MITSUHIRO
To: SKYWORKS SOLUTIONS, INC.
Reel/Frame 064694/0453 →
Continuity (3)
Provisional Application 63201225 · Apr 19, 2021
Provisional Application 63201223 · Apr 19, 2021
Related Publication 20220337213A1 · Oct 20, 2022
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