Method for depositing layers directly adjacent uncovered vias or contact holes
Disclosed are approaches for forming semiconductor device layers. One method may include forming a plurality of openings in a semiconductor structure, and forming a film layer atop the semiconductor structure by delivering a material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the semiconductor structure. The film layer may be formed along the upper surface of the semiconductor structure without being formed along a sidewall of each opening of the plurality of openings, wherein an opening though the film layer remains above each opening of the plurality of openings.
1. A method, comprising:
forming a plurality of openings in a semiconductor structure, wherein the semiconductor structure comprises a photoresist; and
forming a film layer directly atop the photoresist by delivering a material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the semiconductor structure, wherein the film layer is formed along the upper surface of the photoresist without being formed along a sidewall of each opening of the plurality of openings, and wherein an opening though the film layer remains above each opening of the plurality of openings.
2. The method of claim 1 , wherein the material is delivered while the plurality of openings are uncovered.
3. The method of claim 1 , wherein the material is delivered as a ribbon beam.
4. The method of claim 1 , further comprising delivering the material in a series of successive deposition steps, wherein the semiconductor structure is rotated between one or more of the series of successive deposition steps.
5. The method of claim 1 , wherein the semiconductor structure is rotated 90 degrees or less between each of the series of successive deposition steps.
6. The method of claim 1 , wherein each opening of the plurality of openings has a first diameter at the upper surface of the photoresist, wherein the opening though the film layer above each opening of the plurality of openings has a second diameter, wherein the first diameter is substantially the same as the second diameter following formation of the film layer.
7. The method of claim 1 , wherein delivering the material at the non-zero angle comprises depositing at least one of the following along the upper surface of the photoresist: carbon, amorphous silicon, silicon dioxide, silicon nitride, silicon carbide, silicon carbonitride, a boron-carbon film, or a tungsten-carbon film.
8. The method of claim 1 , further comprising generating the material in a plasma chamber.
9. A method of forming a semiconductor device having a plurality of vias, the method comprising:
forming the plurality of vias through the semiconductor device, wherein the semiconductor structure comprises a photoresist;
forming a film layer directly atop the photoresist by delivering a ribbon beam of material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the photoresist, wherein the film layer is formed along the upper surface of the photoresist without being formed along a sidewall of each via of the plurality of vias, and wherein an opening though the film layer remains above each via of the plurality of vias.
10. The method of claim 9 , wherein the ribbon beam of material is delivered while the plurality of vias are uncovered.
11. The method of claim 9 , wherein the ribbon beam of material is delivered at a temperature less than 120° C.
12. The method of claim 9 , further comprising delivering the ribbon beam of material in a series of successive deposition steps, wherein the semiconductor structure is rotated between one or more of the series of successive deposition steps.
13. The method of claim 9 , wherein each via of the plurality of vias has a first diameter at the upper surface of the photoresist, wherein the opening though the film layer above each via of the plurality of vias has a second diameter, and wherein, following formation of the film layer, the first diameter is substantially the same as the second diameter.
14. The method of claim 9 , wherein delivering the ribbon beam of material at the non-zero angle comprises depositing at least one of the following along the upper surface of the photoresist: carbon, amorphous silicon, silicon dioxide, silicon nitride, silicon carbide, silicon carbonitride, a boron-carbon film, or a tungsten-carbon film.
15. The method of claim 9 , further comprising delivering the ribbon beam of material from a plasma chamber.
16. A method of forming a memory device, comprising:
forming a plurality of openings in a semiconductor structure, wherein the semiconductor structure comprises a photoresist; and
delivering a ribbon beam of material from a plasma source to the semiconductor structure to form a film layer directly atop an upper surface of the photoresist, wherein the ribbon beam of material is delivered at a non-zero angle relative to a normal extending perpendicular from the upper surface of the photoresist, wherein the film layer is formed atop the upper surface of the photoresist, directly adjacent the plurality of openings, without being formed along a sidewall of each opening of the plurality of openings, and wherein an opening though the film layer remains above each opening of the plurality of openings.
17. The method of claim 16 , wherein each opening of the plurality of openings has a first diameter at the upper surface of the photoresist, wherein the opening though the film layer above each opening of the plurality of openings has a second diameter, and wherein, following formation of the film layer, the first diameter is substantially the same as the second diameter.