Patterning layer modification using directional radical ribbon beam
Disclosed are approaches for forming semiconductor patterning features. One method may include providing a plurality of openings through a patterning layer of a semiconductor device, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, and wherein the patterning layer is a resist layer or a carbon-based layer. The method may further include removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall, wherein the beam of neutral reactive radicals is directed at a non-zero angle relative to a perpendicular extending from an upper surface of the patterning layer.
1 . A method, comprising:
providing a plurality of openings through a patterning layer of a semiconductor device, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, wherein the patterning layer is a resist layer or a carbon-based layer, and wherein an opening of the plurality of openings has a first end opposite a second end and a first side opposite a second side; and
removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall between the first end and the second end, wherein the beam of neutral reactive radicals is directed at a first non-zero angle relative to a perpendicular extending from a first plane defined by an upper surface of the patterning layer, wherein the beam of neutral reactive radicals is further directed into the sidewall at a second non-zero angle relative to a second axis extending along a second plane wherein the first plane and the second plane are different, and wherein the beam of neutral reactive radicals is a collimated ribbon beam comprising radicals having an energy less than 100 eV.
2 . The method of claim 1 , wherein the second plane is defined by a lengthwise axis that extends between the first end and the second end of the opening.
3 . The method of claim 1 , wherein the radicals are generated in a separate plasma chamber.
4 . The method of claim 1 , wherein each opening of the plurality of openings is one of the following: a trench, a via, or a contact hole.
5 . The method of claim 1 , wherein the beam of neutral reactive radicals is directed into the sidewall at the first end or the second end.
6 . The method of claim 1 , wherein the portion of the patterning layer is removed by directing the beam of neutral reactive radicals into the sidewall during an ashing process or during an etch process.
7 . The method of claim 1 , wherein the radicals of the beam of neutral reactive radicals are one of: oxygen, hydrogen, and nitrogen.
8 . A method of forming a semiconductor device, comprising:
providing a plurality of openings through a patterning layer, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, wherein the patterning layer is a photoresist or a carbon-based film, and wherein an opening of the plurality of openings has a first end opposite a second end and a first side opposite a second side; and
removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall between the first end and the second end, wherein the beam of neutral reactive radicals is directed at a first non-zero angle relative to a perpendicular extending from a first plane defined by an upper surface of the patterning layer, wherein the beam of neutral reactive radicals is further directed into the sidewall at a second non-zero angle relative to a second axis extending along a second plane wherein the first plane and the second plane are different, and wherein the beam of neutral reactive radicals is a collimated ribbon beam comprising radicals having an energy less than 100 eV.
9 . The method of claim 8 , wherein the second plane is defined by a lengthwise axis that extends between the first end and the second end of the opening.
10 . The method of claim 8 , wherein radicals of the beam of neutral reactive radicals are generated in a separate plasma chamber.
11 . The method of claim 10 , wherein each opening of the plurality of openings is one of the following: a trench, a via, or a contact hole.
12 . The method of claim 10 , wherein the beam of neutral reactive radicals is directed into the sidewall at the first end or the second end.
13 . The method of claim 10 , wherein the portion of the patterning layer is removed by directing the beam of neutral reactive radicals into the sidewall during an ashing process or during an etch process.
14 . The method of claim 10 , wherein the neutral reactive radicals of the beam of neutral reactive radicals are one of: oxygen, hydrogen, and nitrogen.
15 . A method of modifying openings of a semiconductor device, the method comprising:
providing a plurality of openings through a patterning layer, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, wherein the patterning layer is a photoresist or a carbon-based film, and wherein an opening of the plurality of openings has a first end opposite a second end and a first side opposite a second side; and
removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall between the first end and the second end during an ashing process or an etching process, wherein the beam of neutral reactive radicals is directed at a first non-zero angle relative to a perpendicular extending from a first plane defined by an upper surface of the patterning layer, wherein the beam of neutral reactive radicals is further directed into the sidewall at a second non-zero angle relative to a second axis extending along a second plane wherein the first plane and the second plane are different, and wherein the beam of neutral reactive radicals is a collimated ribbon beam comprising radicals having an energy less than 100 eV.
16 . The method of claim 15 , further comprising:
providing the semiconductor device in a process chamber; and
generating, in a plasma chamber separate from the process chamber, radicals of the beam of neutral reactive radicals.
17 . The method of claim 15 , wherein each opening of the plurality of openings is one of the following: a trench, a via, or a contact hole, wherein each opening of the plurality of openings has a first end opposite a second end and a first side opposite a second side, and wherein the beam of neutral reactive radicals is directed into the sidewall at the first end or the second end.